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Method for manufacturing solar cell with local back surface field passivation

A solar cell and partial back field technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of small production capacity, difficult mask realization, unsuitable for mass production, etc., to reduce manufacturing costs and The effect of process time and process cost reduction

Active Publication Date: 2013-12-18
ZHENJINAG KLOCKNER MOELLER ELECTRICAL SYST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of mask is quite difficult to realize, and it is only suitable for small batch trial production in the laboratory, not suitable for mass production
In addition, this process requires the process of adding and removing masks, so its production capacity is also very small

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Step 1: Texture making and polishing, forming a textured surface on the front of the 156mm*156mm silicon wafer, and polishing on the back;

[0038] For multi-crystalline silicon wafers, the conventional acid texturing method (HF acid + HNO3 acid) is first used to texturize both sides or one side of the silicon wafer; then one side is polished. :HNO3:glacial acetic acid=3:5:3 volume ratio) for polishing.

[0039] Step 2, back coating, using SiO2 or AL2O3 method for back coating;

[0040] That is, use PECVD equipment to deposit SiO2 and SiNx laminated films on the back of the silicon wafer, with a total thickness of 80-150nm; or use atomic layer deposition equipment or PECVD equipment to deposit Al2O3 and SiNx laminated films on the back of the silicon wafer, with a total thickness of Between 80-150nm.

[0041] Step 3, front diffusion, using a diffusion process to form a PN junction;

[0042] In a high-temperature diffusion furnace (between 760°C and 850°C), POCl3, O2,...

Embodiment 2

[0052] Step 1: Texture making, forming a textured surface on one or both sides of a 156mm*156mm silicon wafer;

[0053] For polycrystalline silicon wafers, the conventional acid texturing (HF acid + HNO3 acid) process is first used to texturize both sides or one side of the silicon wafer.

[0054] Step 2, front diffusion, using the diffusion method to form a PN junction;

[0055] In a high-temperature diffusion furnace (between 760°C and 850°C), POCl3, O2, and N2 gases are passed through for high-temperature diffusion to form a PN junction.

[0056] Step 3, remove edge knots and back polishing, remove edge knots and perform back polishing at the same time;

[0057] The single-side polishing process plan is: the upper surface of the silicon wafer is protected by a water film, and the lower surface is polished with a strong acid (HF:HNO3:glacial acetic acid = 3:5:3 volume ratio) to remove the edge knot.

[0058] Step 4, back coating, using SiO2 or AL2O3 method for back coating...

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Abstract

The invention relates to the manufacturing technology of polycrystalline silicon solar cells, in particular to a method for manufacturing a solar cell with local back surface field passivation. The method comprises the sequential steps of flock making, polishing, back face film coating, forming PN junctions on the front face, back face laser holing or grooving, rear cleaning, front face film coating, silk-screen printing and sintering, and solar cell making. The method for manufacturing the solar cell with the local back surface filed passivation is simple in process step, low in manufacturing cost, and good in product quality.

Description

technical field [0001] The invention relates to a manufacturing technology of a polycrystalline silicon solar cell, in particular to a manufacturing method of a partial back field passivation solar cell. Background technique [0002] The lack of silicon raw materials has accelerated the development of silicon wafers to thin slices. The thickness of silicon wafers used by most photovoltaic companies has been between 180 and 200 μm. With the thinning of silicon wafers and the improvement of silicon wafer quality, especially the large-scale adoption of high-efficiency polycrystalline silicon wafers, the diffusion length of minority carriers is greater than the thickness of silicon wafers, and some minority carriers will diffuse to the back of the battery Instead, recombination occurs, which will have a significant loss in cell efficiency. [0003] At present, the back of solar cells basically adopts ALBSF (aluminum back field). This BSF (back field) acts as a p+ layer to preve...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 闻震利张良李良王霞
Owner ZHENJINAG KLOCKNER MOELLER ELECTRICAL SYST CO LTD
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