Method for manufacturing solar cell with local back surface field passivation
A solar cell and partial back field technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of small production capacity, difficult mask realization, unsuitable for mass production, etc., to reduce manufacturing costs and The effect of process time and process cost reduction
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[0036] Example one:
[0037] Step 1, texturing and polishing, forming a suede on the front side of the 156mm*156mm silicon wafer, and polishing on the back;
[0038] For polycrystalline silicon wafers, the conventional acid texturing (HF acid + HNO3 acid) method is first used to texturing the silicon wafer on both sides or one side; then the single side polishing is performed. The process scheme is: the silicon wafer is protected by a water film on the top, and strong acid (HF :HNO3:glacial acetic acid=3:5:3 volume ratio) for polishing.
[0039] Step two, back coating, using SiO2 or AL2O3 method for back coating;
[0040] That is, use PECVD equipment to deposit SiO2 and SiNx laminated film on the back of the silicon wafer with a total thickness of 80-150nm; or use atomic layer deposition equipment or PECVD equipment to deposit AL2O3 and SiNx laminated film on the back of the silicon wafer with a total thickness of Between 80-150nm.
[0041] Step three, front diffusion, using diffusion...
Example Embodiment
[0051] Embodiment two:
[0052] Step one, making texturing, forming a texturing surface on one or both sides of a 156mm*156mm silicon wafer;
[0053] For polycrystalline silicon wafers, the conventional acid texturing (HF acid + HNO3 acid) process is first used to texturing the silicon wafers on both sides or on one side.
[0054] Step two, front diffusion, using diffusion method to form PN junction;
[0055] In the high-temperature diffusion furnace (between 760°C and 850°C), POCl3, O2, and N2 gases are introduced for high-temperature diffusion to form a PN junction.
[0056] Step three, removing edge knots and back polishing, removing edge knots while performing back polishing;
[0057] The single-side polishing process plan is: the top surface of the silicon wafer is protected by a water film, and the bottom is polished with a strong acid (HF:HNO3:glacial acetic acid=3:5:3 volume ratio) to remove edge knots.
[0058] Step four, back coating, using SiO2 or AL2O3 method for back coating;...
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