Method for Detecting Oxygen Leakage in Reaction Chamber of Annealing Equipment

Abstract

The invention discloses a method for detecting oxygen leakage of a reaction chamber of annealing equipment. The method comprises the following steps: a wafer substrate is provided; an oxidation layer and a polycrystalline silicon layer are deposited on the wafer substrate; ion implantation is carried out on the wafer substrate; annealing treatment is carried out on the wafer substrate in the reaction chamber of the annealing equipment; resistance of the wafer substrate is measured after annealing and the resistance is defined as first resistance; under the same condition, resistance of the wafer substrate in the annealing equipment's reaction chamber without oxygen leakage is defined as second resistance; and the second resistance is compared with the first resistance. If the second resistance is greater than the first resistance, it is judged that the reaction chamber of the annealing equipment is leaking oxygen. According to the relationship between oxygen content and resistance of the wafer after annealing, whether the reaction chamber of the annealing equipment is leaking oxygen, the amount of leaked oxygen, distribution situation of oxygen in the reaction chamber and oxygen leakage position can be detected. As metallic element is not used, short circuit of a semiconductor device and pollution to the equipment are avoided, and costs are reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for detecting oxygen leakage in a reaction chamber of an annealing equipment. Background technique [0002] With the continuous development of the semiconductor manufacturing process, the monitoring requirements for the oxygen content in the reaction chamber of the annealing equipment are becoming more and more stringent. Oxygen leakage will increase the contact resistance of the wafer, which will cause the semiconductor device to fail. [0003] In order to detect the leakage of oxygen in the reaction chamber of the annealing equipment, the current method is usually to deposit metal elements on the wafer, and then react the metal elements with the surface of the wafer through annealing, and then determine whether there is oxygen leakage by observing the color change. For example: deposited Ti metal, the white wafer turns golden yellow, which means normal. If th...

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Problems solved by technology

For example: deposited Ti metal, the white wafer turns golden yellow, which means normal, if the color distribution is uneven and there is blue baking, it proves that there is an oxygen leak

However, the introduction of metal elements will cause semiconductor devices to fail due to short circuits, and may cause cross-contamination of other machines

Moreover, the above method cannot confirm the location of oxygen leakage in the reaction chamber and the amount of oxygen leakage.

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