51 results about "Oxygen annealing" patented technology

The invention provides a method for regulating a phase-transition temperature of a vanadium dioxide film. According to the method, a metal vanadium or low-valence vanadium oxide film is subjected to oxygen annealing in vacuum; and the phase-transition temperature of the produced vanadium dioxide film is regulated by changing oxygen partial pressure in the annealing process. The manner for regulating the phase transition is not depended on a substrate, can be implemented on a crystal substrate as well as on a non-crystal substrate, and is a very simple and efficient method for regulating the phase-transition temperature of the vanadium dioxide film. The method has high flexibility, is simple to operate and low in cost, and can be compatible to or co-used with other methods for regulating the phase-transition temperature.

A substrate is provided, and a silicon dioxide thin film is formed thereon. Subsequently, an amorphous silicon thin film is formed over the silicon dioxide thin film, and a low temperature plasma nitridation process is preformed to form a nitrogen-containing amorphous silicon thin film. Following that, an oxygen annealing process is carried out to form a nitrogen-rich silicon oxynitride layer.

The invention relates to an annealing method for improving luminous efficiency of a cerium-doped yttrium aluminum garnet crystal, which is characterized by performing low temperature oxygen annealing or high temperature hydrogen annealing on the cerium-doped yttrium aluminum garnet (Ce:YAG) crystal grown by a graphite heater method. The method comprises the following steps: cleaning the crystal with acetone or alcohol first; placing the Ce:YAG crystal on a white stone or a pure YAG crystal substrate in a hearth; raising the temperature; annealing at a constant temperature; reducing the temperature to room temperature; and taking the Ce:YAG crystal out of the hearth. The annealing method can effectively eliminate the carbon-related defect in the crystal and improve the permeability of the crystal; and Ce<2+> ions formed in the growth process in the crystal are oxidized, thus the concentration of Ce<3+> ions needs to be increased and Ce<4+> ions are inhibited as much as possible at the same time to avoid quenching effect caused by the Ce<4+> ions so that the luminous intensity of the Ce:YAG crystal is improved to the utmost extent.

The invention discloses a charge-trapping type storage element and a preparation technology therefor. The structure of the storage element is Si substrate/SiO2 tunneling layer/Ga2O3 layer/Au electrode, wherein the SiO2 tunneling layer is generated through the depositing of a Ga2O3 layer on the Si substrate and then oxygen annealing. The preparation technology comprises the steps: (1), depositing the Ga2O3 layer on the Si substrate through employing a magnetron sputtering method, and forming a Si substrate/Ga2O3 layer composite structure; (2), increasing the temperature of the Si substrate/Ga2O3 layer composite structure in an oxygen atmosphere to an annealing temperature 540 DEG C to 720 DEG C from the room temperature at a constant speed, and then starting the cooling to the room temperature at the constant speed, thereby forming a Si substrate/SiO2 tunneling layer/Ga2O3 layer composite structure; (3), growing an Au electrode on the surface of the Ga2O3 layer of the Si substrate/SiO2 tunneling layer/Ga2O3 layer composite structure, and obtaining the storage element with the Si substrate/SiO2 tunneling layer/Ga2O3 layer/Au electrode structure.

A method for reducing grid stacked layer oxidation erosion is to insert nitrogen ions onto sidewall surface of the grid stacked layer by tilt ion insertion method, so the sidewall surface is full of nitrogen ions, then oxygen annealing is undergone to form a silicon nitride oxigen layer on the grid stacked layer sidewall surface to stop continued oxidation of the polysilicon on the grid stacked layer, which can not only avoid thickenss increase on the dielectric edge resulted in oxidation erosion of the polysilicon layer, but also eliminate polysilicon remains.

The invention relates to a rare earth doped niobate single-crystal up-conversion luminescent material and a preparation method thereof, and relates to the technical field of up-conversion luminescentmaterials. The method comprises the following steps: A, preparing a polycrystalline material having a theoretical composition of yEr-K<x>Na<1-x>NbO<3> according to a molar ratio; B, preparing a crystal growth starting material according to a molar ratio; C, putting the crystal growth starting material into a growth crucible, and growing a Er-KNN single crystal by using a top seed crystal growth method at a temperature of 1000-1400 DEG C; D, performing annealing on the Er-KNN single crystal; and E, testing up-conversion luminescence properties of the product. The method provided by the invention can grow the large-sized Er-KNN single crystal, in particular, the up-conversion luminescence characteristics of the product disappear after vacuum annealing at a temperature of 400-600 DEG C, and the up-conversion luminescence intensity of the product is enhanced by nearly 20 times after oxygen annealing at a temperature of 700-800 DEG C; therefore, the Er-KNN single crystal provides a solid technical material basis for the fields such as oxygen sensors and optical waveguides.

The invention discloses a method for preparing an ultra-thin germanium oxide interface repairing layer on a Ge substrate. The method comprises the steps of: selecting a Ge substrate, removing a natural oxide layer on the surface of the Ge substrate, then transferring the Ge substrate in a cavity of an atomic layer deposition system, and depositing a layer of Al2O3 film on the surface of the Ge substrate to serve as an O2 barrier layer in a thermal oxidation process; placing the Ge substrate with the Al2O3 film deposited on the surface thereof into a rapid annealing furnace, and forming an ultra-thin GeOx interface layer at an Al2O3/Ge interface by utilizing a thermal oxidization way in an O2 atmosphere; placing the Ge substrate with the ultra-thin GeOx interface layer formed at the Al2O3/Ge interface into the atomic layer deposition reaction cavity, and depositing a high-k gate medium on the Al2O3 film; after grate medium deposition is carried out successively, performing annealing and low-temperature oxygen annealing by utilizing the rapid annealing furnace to further improve the quality of the oxide gate medium and improve the quality of the k-medium/Al2O3/GeOx/Ge interface. The method is also applicable to a Ge-based MOS (Metal Oxide Semiconductor), an MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) and other devices including a Ge-based gate laminated layer.

The invention provides a method for preparing single-domain samarium-barium-copper-oxygen (Sm-Ba-Cu-O) superconducting bulk materials. The method is characterized in that neodymium, barium, copper and oxygen to which MgO powder is added are adopted as seed crystals; a Sm2BaCuO5 phase, a BaCuO2 phase and a CuO phase are prepared according to a certain molar ratio, and a proper amount of CeO2 powder is added at the same time; the materials are evenly mixed and then are pressed in the uniaxial direction so as to be made into a Sm-Ba-Cu-O pre-melted block; and the pre-melted block grows into a Sm-Ba-Cu-O bulk material having a single-domain structure through a powder melting process, and then is turned into a single-domain Sm-Ba-Cu-O superconducting bulk material via oxygen annealing treatment. The Sm-Ba-Cu-O superconducting bulk material prepared by use of the method is good in technical repeatability and relatively lower in requirement on the maximum temperature of equipment, and the method is easier to obtain a bulk material sample having appearance of a single-domain structure.

The invention relates to a manufacturing method for a bearing ball. The manufacturing method comprises the following steps of 1) selecting materials: selecting the materials and rough machining by upsetting and forging; 2) putting the materials into a 300 ton presser and hot forging at a temperature of 1,000-1,200 DEG C; 3) carrying out annealing treatment by using an oxygen-free annealing furnace at a temperature of 850-890 DEG C, keeping the temperature for 3-6 h and cooling; 4) carrying out cold rolling treatment after cooling and then quenching in a quenching furnace at a temperature of 100-200 DEG C; 5) melting the materials in a melting furnace and making melt liquid into a plurality of small cast ingots; and 6) putting the cast ingots in a grinding machine and grinding the cast ingots into balls. The balls manufactured by the method are good is quality and long in service life, and can effectively guarantee operations of machine equipment.

The invention discloses a charge storage device based on oxide nanoparticles formed by in-situ annealing, and a preparation method thereof. A layer of metal Zr thin film is grown by virtue of a pulsedlaser deposition method; and in-situ oxygen annealing treatment is carried out to form a ZrO2 nanoparticle storage medium. The preparation method of the charge storage device based on the ZrO2 nanoparticles formed by the in-situ annealing is simple in operation and can realize large-scale preparation.

The invention provides a method for passivating a high-k/Ge interface by ozone while improving a high-k gate dielectric. The method comprises the steps of: providing a substrate, wherein the substrate is a Ge substrate or a wafer containing a Ge thin film surface; carrying out high-k gate dielectric growing and ozone treatment on the substrate alternately, and forming a high-k/GeOx/Ge gate stack structure on the substrate; and performing low-temperature oxygen annealing on the high-k gate dielectric to enhance quality of the high-k gate dielectric. By adopting the method for passivating the high-k/Ge interface by ozone while improving the high-k gate dielectric, the ultrathin GeOx layer is formed on the Ge surface, further the EOT is reduced, the quality of the high-k/Ge interface is improved, and good high-k/Ge interface passivation effect is achieved.