38 results about "Oxygen annealing" patented technology

A preparation method of a high-quality titanium dioxide film with a controllable refractive index comprises the following steps that (1) a pulse laser light path is adjusted, and uniform scanning of a laser beam on the surface of a target material is achieved through a two-dimensional light beam scanning galvanometer; (2) preparing a titanium dioxide film: placing the substrate and the target material in a deposition cavity of vacuum deposition equipment, adjusting the distance between the target material and the substrate, setting the rotating speed of the target material and the heating temperature of the substrate, setting pulse laser parameters, bombarding the target material through collinear pulse string laser, and depositing generated plasma plume on the substrate to form the titanium dioxide film; and (3) annealing treatment of the titanium dioxide film: carrying out high-temperature oxygen introduction annealing treatment on the deposited titanium dioxide film. According to the method, the roughness of the titanium dioxide film is greatly improved in a collinear pulse string laser output mode, so that the high-quality titanium dioxide film with a smoother surface is obtained; the refractive index of the titanium dioxide film is flexibly regulated and controlled by changing the annealing temperature and time of high-temperature oxygen introduction.

The invention belongs to the field of semiconductor materials, and discloses a method for preferentially growing an epsilon-phase gallium oxide epitaxial film through oxygen flow regulation and control. The preparation method comprises the following steps: cleaning a sapphire substrate, and putting the sapphire substrate into a cavity of a metal organic chemical vapor deposition system; setting air pressure in the reaction cavity, introducing carrier gas, raising the temperature to a first preset temperature, introducing first preset high-flow oxygen, and entering a substrate high-oxygen preheating stage; raising the temperature to a second preset temperature, opening the gallium source, introducing second preset low-flow oxygen, and entering an epitaxial low-oxygen growth stage; closing the gallium source, introducing third preset high-flow oxygen, and entering an in-situ high-oxygen annealing stage; and after annealing is finished, recovering normal pressure, cooling to room temperature, and taking out to obtain the epsilon-phase gallium oxide epitaxial film. The pure phase property and the crystal quality of the epsilon-phase gallium oxide epitaxial film are improved in an oxygen flow regulation and control mode, and a way is laid for subsequent preparation of electronic and power devices.

This disclosure relates to the photovoltaic field, providing a photovoltaic cell and its manufacturing method, as well as a photovoltaic module. The manufacturing method of the photovoltaic cell includes: placing a substrate in a support structure, at least one surface of the substrate including a plurality of mutually spaced first regions, the first regions being located at the edges of the surface; forming a semiconductor layer on the surface; performing a diffusion process on the semiconductor layer to convert the semiconductor layer into a doped layer, and forming a protective layer on the side of the doped layer away from the substrate; wherein, in the step of forming the semiconductor layer, nitrogen gas and silane are introduced into a reaction chamber used to prepare the semiconductor layer, and the ratio of the nitrogen gas flow rate to the silane gas flow rate is controlled to be 0.7~1; and / or, the diffusion process includes sequentially performed oxygen-free annealing and oxygen-containing annealing, the ratio of the oxygen-containing annealing duration to the oxygen-free annealing duration being greater than 1. This disclosure at least helps to avoid excessive erosion of the doped layer located on the first region.

The invention provides a gate oxide annealing method for reducing a gate oxide interface state. The method aims at solving the problem that the interface state density of a thin silicon oxynitride gate medium is high. The method comprises the following steps: carrying out first annealing treatment on a nitrided gate oxide layer in a nitrogen atmosphere; and after the first annealing treatment, re-oxidation treatment is carried out on the gate oxide layer in situ in a pure oxygen atmosphere. Through the in-situ re-oxidation treatment, a high-quality silicon dioxide thin layer is formed at the interface of the gate oxide layer and the silicon substrate, so that the dangling bond of the interface is effectively repaired, and the nitrogen concentration at the interface is reduced. According to the invention, the interface state density and gate oxide electric leakage can be significantly reduced, the equivalent oxide thickness is maintained basically unchanged, and the electrical performance and reliability of the semiconductor device are effectively improved.

The invention belongs to the technical field of photovoltaic cells, and provides a P-type BC cell and a preparation method thereof. The method comprises the following steps: depositing a first tunneling oxide layer, an intrinsic amorphous silicon layer, a second tunneling oxide layer, a phosphorus-doped amorphous silicon layer and a surface silicon oxide layer on the back surface of a P-type monocrystalline silicon wafer; carrying out local film opening treatment on silicon oxide on the outermost layer of the laminated silicon wafer, carrying out wet etching treatment on the silicon wafer after film opening by adopting alkali and an additive, printing patterned boron slurry on the surface of the etched silicon wafer, and then carrying out high-temperature oxygen annealing to form a P-I-N structure silicon wafer; removing the oxide layer on the front surface of the P-I-N structure silicon wafer, and then performing low-temperature alkali texturing; and sequentially depositing an aluminum oxide layer and a silicon nitride film on the front surface and the back surface of the textured silicon wafer. The BC battery back surface structure is prepared by adopting a tunneling + poly laminated structure and a mode of printing boron slurry after laser film opening, so that the process flow is simplified, the manufacturing cost is reduced, and the large-scale mass production of the battery is promoted.

Provided is a YAG sintered body that exhibits high transparency and can be produced by a short oxygen annealing treatment time. The glass contains silicon and a Group 2 element, and has an optical loss coefficient of 0.002 cm when transmitting light with a wavelength of 300 to 2500 nm (excluding wavelengths where absorption occurs due to the added element). -1 1. A yttrium aluminum garnet sintered body, characterized in that:

The present invention provides a YAG sintered body that exhibits high transparency and that can be produced in a short oxygen annealing treatment time.　The present invention provides an yttrium aluminum garnet sintered body that is characterized by comprising silicon and a second group element and by exhibiting an optical loss coefficient of 0.002 cm-1 or less when light having a wavelength of 300-2500 nm (excluding a wavelength in which absorption by an additive element is present) is passed therethrough.

The present application relates to a kind of shallow diamond NV color center preparation method, shallow diamond NV color center, specifically relates to quantum material technical field, the preparation method includes: diamond is sequentially ion implanted, vacuum annealing, ladder vacuum annealing, and oxygen annealing;The angle of the ion implantation is 7-10 °;The energy of the ion implantation is 2-30 keV.The shallow diamond NV color center provided in the present application, by optimizing the parameter of ion implantation, so that the distribution interval of diamond NV color center in shallow along depth direction is narrow, to ensure that it has good use performance when being used as quantum material.

The invention provides a positioning method of a wafer conveying device on a heating machine table, and the method comprises the steps: adjusting the heating temperature of a bearing surface of a wafer bearing table to be set in a manner of increasing or decreasing along the radial direction based on the linear relation between the temperature of thermal oxygen annealing treatment and the thickness of a grown oxide layer; when the position of the wafer on the wafer bearing table deviates, the thickness of the growing oxide layer also deviates on the wafer as a whole, at the moment, multi-point linear measurement is carried out on the thickness of the oxide layer in the first direction passing through the circle center of the wafer, the extreme point is determined, linear fitting is carried out on all point positions on the two sides of the extreme point, and the maximum point position and the minimum point position are obtained. And an abscissa value of an intersection point of the two linear curves is used as a compensation value for adjustment of the wafer conveying device. According to the positioning method, machine parts do not need to be disassembled, meanwhile, the compensation value of the wafer conveying device can be accurately calculated, operation is easy, the positioning adjustment frequency of the wafer conveying device is reduced, and the positioning result is accurate.

The present invention discloses a metal-free carbon-based quantum material with strong room-temperature ferromagnetism and a preparation method thereof, belonging to the technical field of quantum information materials. The material has a CN chain-like skeleton, C=N bonds, and functional groups of cyano groups, and the element ratio of C:N is (2.3-2.8):1. The method includes: using high-purity g-C3N4 powder as a raw material, obtaining oxygen-free g-C3N4 through deoxygenation annealing and vacuum annealing, and then calcining and fluorinating it with xenon difluoride, followed by thermal defluorination after standing. All operations are carried out in an argon environment. During the thermal defluorination process, structural reconstruction occurs at the edges and basal planes of the carbon-nitrogen skeleton, introducing a high density of local spins, thereby exciting ferromagnetic coupling between the spins. At the same time, the graphite-like phase structure is destroyed to form molecular chains, obtaining a metal-free carbon-based quantum material with a high Curie temperature and strong room-temperature ferromagnetism, which is a room-temperature non-metal self-polarized permanent magnet and can be applied to fields such as spintronic devices, bioelectronic devices, and medical detection.

The invention relates to an oxygen annealing method for a Fe (Se, Te) superconducting thin film, which comprises the following steps of: putting the Fe (Se, Te) thin film epitaxially grown by pulsed laser deposition (PLD) into an annealing cavity, opening a vacuum pump to vacuumize to be less than 1Pa, opening an oxygen valve, continuously introducing oxygen with a specific flow, heating the cavity to reach a specific annealing temperature, keeping the temperature for a specific annealing time, and cooling to the room temperature to obtain the Fe (Se, Te) superconducting thin film. And naturally cooling to the room temperature of 25 DEG C, and taking out the Fe (Se, Te) film. Compared with the prior art, the method has the advantages that the c-axis lattice constant of the annealed Fe (Se, Te) thin film is reduced, the critical transformation temperature Tc is increased, the critical current density Jc is increased, the Jc is increased to 19.60 MA / cm < 2 > under a self-field at 4.2 K after annealing in the oxygen flow of 210 SCCM, and the Jc is increased to 4.27 MA / cm < 2 > under a 9 T magnetic field. The oxygen annealing method is beneficial to removal of interstitial Fe atoms and promotes application of the Fe (Se, Te) thin film in a high-intensity magnetic field.

A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration and performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.

A method for manufacturing copper-ceramic composites for power electronic circuit boards includes mixing powders of copper and an active agent in a ball mill that has ceramic grinding bodies for the mechanochemical surface activation of the powders, producing a paste-like composition by adding to the powder a thinning and wetting agent, a plasticizer and a binder, applying the paste to two sides of a ceramic material which is then bonded on the two sides to an oxygen-free annealed sheet copper, and forming a hardening agent from the emerging phase of the chemical compounds corresponding to the material of the circuit boards and from the intermetallics formed with the sheet and powdered copper, which agglomerate into nanosized particles under thermal treatment. The invention provides for the formation of highly reliable copper-ceramic circuit boards with low electrical conductivity, good thermal conductivity and high mechanical strength.

The invention relates to a plasma enhanced photoelectric detector based on a GaN / TiO2 nano array and a preparation method thereof, and the method comprises the steps: firstly preparing a TiO2 nano column array on an N-type Si substrate, and enabling the TiO2 nano column array to be inversely soaked in metal Ga, so as to enable the TiO2 nano column array to be covered by a Ga2O3 film; and after the quality of the Ga2O3 film is improved through oxygen annealing, the Ga2O3 film is placed in the NH3 atmosphere to be annealed, and the GaN film is obtained. And then adding silver nanoparticles, covering graphene on the particles, and finally preparing a cathode and an anode to prepare the device. According to the structure, high specific surface area and carrier transmission efficiency of the GaN / TiO2 nano array are utilized, and a plasma enhancement effect is combined, so that efficient detection of ultraviolet light and visible light is realized. The graphene covering layer enhances the plasma effect of the silver nanoparticles and provides good conductivity, and the electrodes ensure effective electron injection and hole collection to form current. The photoelectric detector has the advantages of high sensitivity, low dark current, high response speed and the like, and is suitable for ultraviolet and visible light detection application.

The invention discloses a method for preparing a Cs3Cu2I5 / ZnGa2O4 heterojunction self-driven ultraviolet photoelectric detector. The device structurally comprises an Al2O3 substrate, a ZnGa2O4 layer, a Cs3Cu2I5 layer and an Au electrode layer from bottom to top. The preparation method of the ultraviolet photoelectric detector comprises the following steps: firstly, placing an Al2O3 substrate in a preparation chamber of pulsed laser deposition (PLD) equipment, bombarding a ZnGa2O4 target material by adopting a 248nm excimer laser to form high-concentration plasma plume deposition on the Al2O3 substrate, then placing a sample in a tube furnace (CVD), and carrying out high-temperature oxygen introduction annealing; after annealing is completed, the thin film is subjected to mask treatment and placed in the preparation chamber of the PLD equipment again, laser is adjusted to bombard a Cs3Cu2I5 target material, and the Cs3Cu2I5 target material is deposited on the surface of the ZnGa2O4 thin film; and finally, evaporating Au electrodes on the surfaces of the two materials by using electron beam vacuum thermal evaporation and forming ohmic contact. The prepared ultraviolet photoelectric detector is low in cost and free of pollution, the ZnGa2O4 and Cs3Cu2I5 materials can detect ultraviolet light according to the characteristics of the ZnGa2O4 and Cs3Cu2I5 materials, and the ultraviolet photoelectric detector has the self-driving characteristic.

The application relates to the field of semiconductor storage materials and devices, and discloses a structure and material of an RRAM storage device and a preparation process thereof, which comprises a bottom metal layer, a bottom electrode base assembly, a resistance change layer, an oxygen blocking layer, an oxygen storage layer, a top electrode and a hard mask layer, wherein the lateral size of the oxygen storage layer is smaller than that of the adjacent layer to form an inner concave structure, the device is wrapped with a top electrode sidewall protection layer and an oxygen storage layer sidewall protection layer generated by in-situ oxidation, and a sidewall protection layer and a device interlayer, the resistance change layer is physically constrained through a groove through hole in the insulating layer, the electric field lines are concentrated, random generation of conductive filaments at the edge is avoided, the dense sidewall protection layer is generated in-situ through a lateral etching and oxygen annealing process, the lattice defects caused by etching are directly repaired, the oxygen blocking layer and the dynamic oxygen storage layer are matched, and a comprehensive oxygen blocking protection system is constructed. The application effectively improves the resistance change performance and reliability of the device and guarantees the process stability of large-scale manufacturing.

The invention relates to a hafnium-based ferroelectric film oxygen defect content control method. The method comprises the following steps: preparing hafnium-based ferroelectric film preparation raw materials; setting at least one growth oxygen regulation and control parameter; preparing the hafnium-based ferroelectric film by using the hafnium-based ferroelectric film preparation raw material according to the growth oxygen regulation and control parameters; setting annealing oxygen regulation and control parameters; carrying out annealing operation on the hafnium-based ferroelectric film according to the annealing oxygen regulation and control parameters; setting re-annealing oxygen regulation and control parameters; and carrying out secondary annealing operation on the hafnium-based ferroelectric film according to the secondary annealing oxygen regulation and control parameter. According to the hafnium-based ferroelectric film oxygen defect content control method provided by the invention, the internal oxygen content of the device is effectively regulated and controlled from three aspects of growth oxygen, annealing oxygen and re-annealing oxygen, the back-end process manufacturing process is met, and research and development of a hafnium-based ferroelectric storage chip are facilitated.

The invention relates to the technical field of photovoltaics, and discloses a back contact photovoltaic cell and a preparation method thereof. The preparation method comprises the following steps: performing laser grooving on an N region and a P region on the back surface of a silicon wafer by adopting infrared laser to form a first cambered surface groove and a second cambered surface groove respectively; after the laser damage layer is removed, an amorphous silicon layer is deposited on the back surface of the silicon wafer; respectively printing N-type doped slurry and P-type doped slurry in the first cambered surface groove and the second cambered surface groove in the back surface of the amorphous silicon layer; aerobic annealing is carried out, so that the amorphous silicon layers at the first cambered surface groove and the second cambered surface groove are converted into N + polycrystalline silicon and P + polycrystalline silicon respectively, and protection layers are formed on the back surfaces of the N-type doped slurry and the P-type doped slurry; and after the protective layer and the N and P type doped slurry are removed, plating a passivation film, and performing metallization to prepare an N type electrode and a P type electrode which are in contact with the N + polycrystalline silicon and the P + polycrystalline silicon respectively. According to the preparation method, the BC cell production process can be simplified, the productivity can be improved, the production cost can be reduced, the carrier collection efficiency can be improved, the back light receiving area can be increased, the series resistance can be reduced, and the photoelectric conversion efficiency and the double-sided rate can be improved.

A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.

The invention discloses a beta-phase gallium oxide nanorod-based solar-blind ultraviolet photoelectric detector and a preparation method thereof. The preparation method comprises the following steps: growing a beta-phase gallium oxide nanorod film on a SiO2 / Si substrate by taking solid metal gallium as a reaction precursor through a low-pressure chemical vapor deposition process; and sequentially carrying out argon plasma surface modification treatment, metal electrode deposition and oxygen high-temperature annealing on the beta-phase gallium oxide nanorod thin film, and finally preparing the solar-blind ultraviolet photoelectric detector. The single beta-phase gallium oxide nanorod is grown through the preparation method, the nanorod has a high specific surface area, and the solar-blind ultraviolet photoelectric detector obtained through plasma treatment, electrode deposition and oxygen annealing treatment keeps a high rising speed and a high falling speed on the premise that a high PDCR is kept, so that the solar-blind ultraviolet photoelectric detector can be applied to the field of photoelectric detection. The sensitivity of the device to ultraviolet light is improved; the preparation method is simple and low in cost.

The invention discloses a room-temperature normal-pressure superconducting material and a preparation method thereof. The material is a rare earth-alkaline earth-nickel-oxygen system and has a double-layer perovskite type layered crystal structure, the chemical general formula is RE1-2AE1-2Ni2O6. 9-7.0, the optimal component is La1. 8Ca1. 2Ni2O6. 95, Tc is greater than or equal to 313K under normal pressure, zero resistance and complete diamagnetism are stably presented at-40-85 DEG C, and Jc is greater than or equal to 1 * 10 < 6 > A / cm < 2 > under 77K and 0T. The preparation method comprises the steps of precursor synthesis, material mixing and matching, pre-sintering nucleation, vacuum tube sealing sintering and precise oxygen control annealing, precise regulation and control of the oxygen content and the crystal structure of the material are achieved through vacuum tube sealing oxygen control, rapid sintering and low-temperature precise annealing, continuous equipment can be replaced to achieve kilogram-level batch preparation, the yield is larger than or equal to 85%, and the production cost is low. The device can be in butt joint with an existing high-temperature superconducting material mass production line. The invention belongs to the technical field of superconducting materials, and particularly relates to a room-temperature and normal-pressure superconducting material which is high in material environment adaptability and controllable and repeatable in preparation process and a preparation method of the room-temperature and normal-pressure superconducting material.

The invention discloses a metal-free carbon-based quantum material with strong room-temperature ferromagnetism and a preparation method thereof, and belongs to the technical field of quantum information materials, the material has a CN chain skeleton, a C = N bond and a cyano functional group, and the element ratio of C to N is (2.3-2.8): 1; the method comprises the steps that high-purity g-C3N4 powder serves as a raw material, oxygen-free g-C3N4 is obtained through deoxidizing annealing and vacuum annealing, then the oxygen-free g-C3N4 and xenon difluoride are subjected to calcination fluorination and standing, then thermal defluorination is conducted, and all the operations are conducted in an argon environment; in the thermal defluorination process, structural reconstruction occurs at the edge and the basal plane of a carbon-nitrogen skeleton, and high-density local spinning is introduced, so that ferromagnetic coupling between the spinning is excited, meanwhile, a graphite-like phase structure is destroyed, a molecular chain is formed, and the metal-free carbon-based quantum material with high Curie temperature and strong room-temperature ferromagnetism is obtained. The permanent magnet is a room-temperature non-metal spontaneous polarization permanent magnet and can be applied to the fields of spinning electronic devices, bioelectronic devices, medical detection and the like.

The preparation method of the (100) oriented BTO crystal film comprises the following steps: S1, preparing a BTO precursor solution, S2, spin-coating the BTO precursor solution on a seed layer to obtain a wet film, and S3, putting the prepared wet film on a hot plate, carrying out multi-gradient pyrolysis, slowly heating to 200 DEG C, keeping the temperature for 10 minutes, and cooling to room temperature; slowly heating to 350 DEG C, keeping for 10 minutes, and cooling to room temperature; finally, the temperature is slowly increased to 450 DEG C, the temperature is kept for 10 minutes, then the temperature is slowly decreased to the room temperature, and an amorphous film is obtained; in the step S4, oxygen annealing is carried out; and slowly raising the temperature to 800 DEG C, keeping the temperature for 0.5 hour, and slowly reducing the temperature to room temperature to obtain the (100) oriented PZT crystal film. The preparation method provided by the invention is simple in steps and low in cost, and the prepared BTO film is high in quality and has excellent electro-optical performance.

The invention discloses an oxide thin film transistor and a preparation process thereof, relates to the technical field of electronics, and mainly aims to solve the problem of poor bias stability of an existing oxide thin film transistor. The oxide thin film transistor comprises a gate isolation layer, an oxide channel layer deposited on the gate isolation layer and a metal source drain layer deposited around a pattern of the oxide channel layer, and the pattern is formed by oxygen annealing treatment after patterning of a covering layer.

The present invention discloses a manufacturing method of a highly airtight sealing overlapping ring and the sealing overlapping ring, belonging to the technical field of precision metal seals. The method comprises the following steps: selecting an H65 brass sheet containing 0.3-0.6% Si, and refining the grains to ≥ grade 8 through low-oxygen annealing; performing progressive die stamping after laser cutting, adopting a process of pre-bending 30° + final bending 88° compensation angle, and controlling the thinning rate ≤ 15% by combining hydraulic shaping; finally, forming a composite protective layer through pre-nickel plating, imitation gold electroplating and molybdate sealing. The present invention solves the problems of large bending springback, poor airtightness and short coating life of traditional seals, with a leakage rate ≤ 1×10⁻⁶ Pa·m³ / s and a salt spray life ≥ 1200 h, and is applicable to high-pressure hydraulic systems and the aerospace field.

The application relates to a hafnium-based ferroelectric film oxygen defect content control method, which comprises the following steps: configuring a hafnium-based ferroelectric film preparation raw material; setting a growth oxygen regulation parameter; preparing a hafnium-based ferroelectric film by using the hafnium-based ferroelectric film preparation raw material according to the growth oxygen regulation parameter; setting an annealing oxygen regulation parameter; performing an annealing operation on the hafnium-based ferroelectric film according to the annealing oxygen regulation parameter; setting a reannealing oxygen regulation parameter; and performing a reannealing operation on the hafnium-based ferroelectric film according to the reannealing oxygen regulation parameter. The hafnium-based ferroelectric film oxygen defect content control method provided by the application effectively regulates the oxygen content in the device from three aspects of growth oxygen, annealing oxygen and reannealing oxygen, meets the manufacturing process of the back end, and is beneficial to the research and development of hafnium-based ferroelectric memory chips.

The invention relates to a surface treatment method of an oxide transistor, and belongs to the field of integrated circuit micro-nano electronic devices. The method comprises the following specific steps: providing a substrate, and forming a bottom gate electrode on the substrate; sequentially forming a dielectric layer and an oxide active layer on the bottom gate electrode; respectively forming a source electrode and a drain electrode on two sides of the oxide active layer; a layer of oxidizable metal is evaporated on the oxide active layer between the source electrode and the drain electrode through electron beam evaporation, and then the metal is converted into metal oxide through natural oxidation, air annealing oxidation, oxygen annealing oxidation and the like. By forming the oxide layer, the interface state density of the transistor can be effectively reduced, the field effect mobility of the transistor is improved, the switching speed and the power consumption performance of the transistor are improved, in addition, the stability and the reliability of the transistor can be improved, and therefore the overall performance of an integrated circuit is improved.

This invention provides a method for preparing high-density, high-entropy rare-earth hafnium salt ceramics by arc remelting, belonging to the technical field of special ceramics. According to the target chemical formula (Dy... a Ho b Er c Yb d Lu e The method involves preparing a mixture of HfO2 powder and specific elemental proportions, ensuring that the molar amount of hafnium in the added HfO2 powder is less than the total molar amount of hafnium required for the target chemical formula. After pre-sintering the mixed powder into a porous framework, the framework is vacuum arc-melted under a protective atmosphere using metallic hafnium as the arc igniter. The melting of the metallic hafnium replenishes the missing hafnium in the mixture, thus precisely achieving the target composition. Multiple ingot remeltings are followed by annealing in an oxygen-containing atmosphere to compensate for oxygen vacancies and stabilize the phase structure. This method, through non-equimolar proportions of rare earth elements at the A-site and control of the closed-loop composition of hafnium, combined with arc remelting and re-oxidation annealing, can efficiently prepare high-density, high-entropy rare earth hafnium salt ceramics with a stable defective fluorite structure. It exhibits significant advantages in thermal conductivity control and irradiation defect containment.

The application provides a method for preparing high-density high-entropy rare earth hafnate ceramics by electric arc remelting, and belongs to the technical field of special ceramics. a Ho b Er c Yb d Lu e )2Hf2O7 and a specific element proportion range is prepared, and the molar amount of hafnium in the added HfO2 powder is less than the total molar amount of hafnium required by the target chemical formula; after the mixed powder is pre-sintered into a porous framework, the framework is subjected to vacuum electric arc melting under a protective atmosphere with hafnium as an arc starting body, and the missing hafnium in the preparation is supplemented after the hafnium is melted, so that the target composition is accurately realized; after multiple ingot turning remelting, oxygen vacancy compensation and phase structure stabilization are realized through oxygen-containing atmosphere annealing. Through non-equal molar ratio of A-site rare earth elements and closed-loop composition control of hafnium, combined with electric arc remelting and reoxygenation annealing, the method can efficiently prepare high-density high-entropy rare earth hafnate ceramics with stable defect-fluorite structure, and has significant advantages in thermal conductivity control and accommodation of radiation defects.

The present application provides a positioning method for a wafer conveying device on a heating machine, based on the linear relationship between the temperature of thermal oxygen annealing treatment and the thickness of the grown oxide layer, the heating temperature of the bearing surface of the wafer bearing table is adjusted in an incremental or decremental manner along the radial direction, when the wafer position on the wafer bearing table deviates, the thickness of the grown oxide layer on the wafer will also produce overall deviation, at this time, the thickness of the oxide layer is measured by multiple point linear measurement in the first direction through the center of the wafer, the maximum point is determined, and the linear fitting of all points on both sides of the maximum point is carried out, the abscissa value of the intersection point of the two linear curves is obtained as the compensation value of the wafer conveying device adjustment. The positioning method does not need to disassemble the machine parts, and can also accurately calculate the compensation value of the wafer conveying device, the operation is simple, the positioning adjustment frequency of the wafer conveying device is reduced, and the positioning result is accurate.