5 results about "Oxygen annealing" patented technology

This disclosure relates to the photovoltaic field, providing a photovoltaic cell and its manufacturing method, as well as a photovoltaic module. The manufacturing method of the photovoltaic cell includes: placing a substrate in a support structure, at least one surface of the substrate including a plurality of mutually spaced first regions, the first regions being located at the edges of the surface; forming a semiconductor layer on the surface; performing a diffusion process on the semiconductor layer to convert the semiconductor layer into a doped layer, and forming a protective layer on the side of the doped layer away from the substrate; wherein, in the step of forming the semiconductor layer, nitrogen gas and silane are introduced into a reaction chamber used to prepare the semiconductor layer, and the ratio of the nitrogen gas flow rate to the silane gas flow rate is controlled to be 0.7~1; and / or, the diffusion process includes sequentially performed oxygen-free annealing and oxygen-containing annealing, the ratio of the oxygen-containing annealing duration to the oxygen-free annealing duration being greater than 1. This disclosure at least helps to avoid excessive erosion of the doped layer located on the first region.

The present application relates to a kind of shallow diamond NV color center preparation method, shallow diamond NV color center, specifically relates to quantum material technical field, the preparation method includes: diamond is sequentially ion implanted, vacuum annealing, ladder vacuum annealing, and oxygen annealing;The angle of the ion implantation is 7-10 °;The energy of the ion implantation is 2-30 keV.The shallow diamond NV color center provided in the present application, by optimizing the parameter of ion implantation, so that the distribution interval of diamond NV color center in shallow along depth direction is narrow, to ensure that it has good use performance when being used as quantum material.

The application relates to the field of semiconductor storage materials and devices, and discloses a structure and material of an RRAM storage device and a preparation process thereof, which comprises a bottom metal layer, a bottom electrode base assembly, a resistance change layer, an oxygen blocking layer, an oxygen storage layer, a top electrode and a hard mask layer, wherein the lateral size of the oxygen storage layer is smaller than that of the adjacent layer to form an inner concave structure, the device is wrapped with a top electrode sidewall protection layer and an oxygen storage layer sidewall protection layer generated by in-situ oxidation, and a sidewall protection layer and a device interlayer, the resistance change layer is physically constrained through a groove through hole in the insulating layer, the electric field lines are concentrated, random generation of conductive filaments at the edge is avoided, the dense sidewall protection layer is generated in-situ through a lateral etching and oxygen annealing process, the lattice defects caused by etching are directly repaired, the oxygen blocking layer and the dynamic oxygen storage layer are matched, and a comprehensive oxygen blocking protection system is constructed. The application effectively improves the resistance change performance and reliability of the device and guarantees the process stability of large-scale manufacturing.

This invention provides a method for preparing high-density, high-entropy rare-earth hafnium salt ceramics by arc remelting, belonging to the technical field of special ceramics. According to the target chemical formula (Dy... a Ho b Er c Yb d Lu e The method involves preparing a mixture of HfO2 powder and specific elemental proportions, ensuring that the molar amount of hafnium in the added HfO2 powder is less than the total molar amount of hafnium required for the target chemical formula. After pre-sintering the mixed powder into a porous framework, the framework is vacuum arc-melted under a protective atmosphere using metallic hafnium as the arc igniter. The melting of the metallic hafnium replenishes the missing hafnium in the mixture, thus precisely achieving the target composition. Multiple ingot remeltings are followed by annealing in an oxygen-containing atmosphere to compensate for oxygen vacancies and stabilize the phase structure. This method, through non-equimolar proportions of rare earth elements at the A-site and control of the closed-loop composition of hafnium, combined with arc remelting and re-oxidation annealing, can efficiently prepare high-density, high-entropy rare earth hafnium salt ceramics with a stable defective fluorite structure. It exhibits significant advantages in thermal conductivity control and irradiation defect containment.