23 results about "Oxygen annealing" patented technology

The invention belongs to the field of semiconductor materials, and discloses a method for preferentially growing an epsilon-phase gallium oxide epitaxial film through oxygen flow regulation and control. The preparation method comprises the following steps: cleaning a sapphire substrate, and putting the sapphire substrate into a cavity of a metal organic chemical vapor deposition system; setting air pressure in the reaction cavity, introducing carrier gas, raising the temperature to a first preset temperature, introducing first preset high-flow oxygen, and entering a substrate high-oxygen preheating stage; raising the temperature to a second preset temperature, opening the gallium source, introducing second preset low-flow oxygen, and entering an epitaxial low-oxygen growth stage; closing the gallium source, introducing third preset high-flow oxygen, and entering an in-situ high-oxygen annealing stage; and after annealing is finished, recovering normal pressure, cooling to room temperature, and taking out to obtain the epsilon-phase gallium oxide epitaxial film. The pure phase property and the crystal quality of the epsilon-phase gallium oxide epitaxial film are improved in an oxygen flow regulation and control mode, and a way is laid for subsequent preparation of electronic and power devices.

This disclosure relates to the photovoltaic field, providing a photovoltaic cell and its manufacturing method, as well as a photovoltaic module. The manufacturing method of the photovoltaic cell includes: placing a substrate in a support structure, at least one surface of the substrate including a plurality of mutually spaced first regions, the first regions being located at the edges of the surface; forming a semiconductor layer on the surface; performing a diffusion process on the semiconductor layer to convert the semiconductor layer into a doped layer, and forming a protective layer on the side of the doped layer away from the substrate; wherein, in the step of forming the semiconductor layer, nitrogen gas and silane are introduced into a reaction chamber used to prepare the semiconductor layer, and the ratio of the nitrogen gas flow rate to the silane gas flow rate is controlled to be 0.7~1; and / or, the diffusion process includes sequentially performed oxygen-free annealing and oxygen-containing annealing, the ratio of the oxygen-containing annealing duration to the oxygen-free annealing duration being greater than 1. This disclosure at least helps to avoid excessive erosion of the doped layer located on the first region.

The invention provides a gate oxide annealing method for reducing a gate oxide interface state. The method aims at solving the problem that the interface state density of a thin silicon oxynitride gate medium is high. The method comprises the following steps: carrying out first annealing treatment on a nitrided gate oxide layer in a nitrogen atmosphere; and after the first annealing treatment, re-oxidation treatment is carried out on the gate oxide layer in situ in a pure oxygen atmosphere. Through the in-situ re-oxidation treatment, a high-quality silicon dioxide thin layer is formed at the interface of the gate oxide layer and the silicon substrate, so that the dangling bond of the interface is effectively repaired, and the nitrogen concentration at the interface is reduced. According to the invention, the interface state density and gate oxide electric leakage can be significantly reduced, the equivalent oxide thickness is maintained basically unchanged, and the electrical performance and reliability of the semiconductor device are effectively improved.

Provided is a YAG sintered body that exhibits high transparency and can be produced by a short oxygen annealing treatment time. The glass contains silicon and a Group 2 element, and has an optical loss coefficient of 0.002 cm when transmitting light with a wavelength of 300 to 2500 nm (excluding wavelengths where absorption occurs due to the added element). -1 1. A yttrium aluminum garnet sintered body, characterized in that:

The present invention provides a YAG sintered body that exhibits high transparency and that can be produced in a short oxygen annealing treatment time.　The present invention provides an yttrium aluminum garnet sintered body that is characterized by comprising silicon and a second group element and by exhibiting an optical loss coefficient of 0.002 cm-1 or less when light having a wavelength of 300-2500 nm (excluding a wavelength in which absorption by an additive element is present) is passed therethrough.

The present application relates to a kind of shallow diamond NV color center preparation method, shallow diamond NV color center, specifically relates to quantum material technical field, the preparation method includes: diamond is sequentially ion implanted, vacuum annealing, ladder vacuum annealing, and oxygen annealing;The angle of the ion implantation is 7-10 °;The energy of the ion implantation is 2-30 keV.The shallow diamond NV color center provided in the present application, by optimizing the parameter of ion implantation, so that the distribution interval of diamond NV color center in shallow along depth direction is narrow, to ensure that it has good use performance when being used as quantum material.

A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration and performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.

A method for manufacturing copper-ceramic composites for power electronic circuit boards includes mixing powders of copper and an active agent in a ball mill that has ceramic grinding bodies for the mechanochemical surface activation of the powders, producing a paste-like composition by adding to the powder a thinning and wetting agent, a plasticizer and a binder, applying the paste to two sides of a ceramic material which is then bonded on the two sides to an oxygen-free annealed sheet copper, and forming a hardening agent from the emerging phase of the chemical compounds corresponding to the material of the circuit boards and from the intermetallics formed with the sheet and powdered copper, which agglomerate into nanosized particles under thermal treatment. The invention provides for the formation of highly reliable copper-ceramic circuit boards with low electrical conductivity, good thermal conductivity and high mechanical strength.

The invention relates to a plasma enhanced photoelectric detector based on a GaN / TiO2 nano array and a preparation method thereof, and the method comprises the steps: firstly preparing a TiO2 nano column array on an N-type Si substrate, and enabling the TiO2 nano column array to be inversely soaked in metal Ga, so as to enable the TiO2 nano column array to be covered by a Ga2O3 film; and after the quality of the Ga2O3 film is improved through oxygen annealing, the Ga2O3 film is placed in the NH3 atmosphere to be annealed, and the GaN film is obtained. And then adding silver nanoparticles, covering graphene on the particles, and finally preparing a cathode and an anode to prepare the device. According to the structure, high specific surface area and carrier transmission efficiency of the GaN / TiO2 nano array are utilized, and a plasma enhancement effect is combined, so that efficient detection of ultraviolet light and visible light is realized. The graphene covering layer enhances the plasma effect of the silver nanoparticles and provides good conductivity, and the electrodes ensure effective electron injection and hole collection to form current. The photoelectric detector has the advantages of high sensitivity, low dark current, high response speed and the like, and is suitable for ultraviolet and visible light detection application.

The application relates to the field of semiconductor storage materials and devices, and discloses a structure and material of an RRAM storage device and a preparation process thereof, which comprises a bottom metal layer, a bottom electrode base assembly, a resistance change layer, an oxygen blocking layer, an oxygen storage layer, a top electrode and a hard mask layer, wherein the lateral size of the oxygen storage layer is smaller than that of the adjacent layer to form an inner concave structure, the device is wrapped with a top electrode sidewall protection layer and an oxygen storage layer sidewall protection layer generated by in-situ oxidation, and a sidewall protection layer and a device interlayer, the resistance change layer is physically constrained through a groove through hole in the insulating layer, the electric field lines are concentrated, random generation of conductive filaments at the edge is avoided, the dense sidewall protection layer is generated in-situ through a lateral etching and oxygen annealing process, the lattice defects caused by etching are directly repaired, the oxygen blocking layer and the dynamic oxygen storage layer are matched, and a comprehensive oxygen blocking protection system is constructed. The application effectively improves the resistance change performance and reliability of the device and guarantees the process stability of large-scale manufacturing.

The invention relates to the technical field of photovoltaics, and discloses a back contact photovoltaic cell and a preparation method thereof. The preparation method comprises the following steps: performing laser grooving on an N region and a P region on the back surface of a silicon wafer by adopting infrared laser to form a first cambered surface groove and a second cambered surface groove respectively; after the laser damage layer is removed, an amorphous silicon layer is deposited on the back surface of the silicon wafer; respectively printing N-type doped slurry and P-type doped slurry in the first cambered surface groove and the second cambered surface groove in the back surface of the amorphous silicon layer; aerobic annealing is carried out, so that the amorphous silicon layers at the first cambered surface groove and the second cambered surface groove are converted into N + polycrystalline silicon and P + polycrystalline silicon respectively, and protection layers are formed on the back surfaces of the N-type doped slurry and the P-type doped slurry; and after the protective layer and the N and P type doped slurry are removed, plating a passivation film, and performing metallization to prepare an N type electrode and a P type electrode which are in contact with the N + polycrystalline silicon and the P + polycrystalline silicon respectively. According to the preparation method, the BC cell production process can be simplified, the productivity can be improved, the production cost can be reduced, the carrier collection efficiency can be improved, the back light receiving area can be increased, the series resistance can be reduced, and the photoelectric conversion efficiency and the double-sided rate can be improved.

The invention discloses a beta-phase gallium oxide nanorod-based solar-blind ultraviolet photoelectric detector and a preparation method thereof. The preparation method comprises the following steps: growing a beta-phase gallium oxide nanorod film on a SiO2 / Si substrate by taking solid metal gallium as a reaction precursor through a low-pressure chemical vapor deposition process; and sequentially carrying out argon plasma surface modification treatment, metal electrode deposition and oxygen high-temperature annealing on the beta-phase gallium oxide nanorod thin film, and finally preparing the solar-blind ultraviolet photoelectric detector. The single beta-phase gallium oxide nanorod is grown through the preparation method, the nanorod has a high specific surface area, and the solar-blind ultraviolet photoelectric detector obtained through plasma treatment, electrode deposition and oxygen annealing treatment keeps a high rising speed and a high falling speed on the premise that a high PDCR is kept, so that the solar-blind ultraviolet photoelectric detector can be applied to the field of photoelectric detection. The sensitivity of the device to ultraviolet light is improved; the preparation method is simple and low in cost.

The invention discloses a room-temperature normal-pressure superconducting material and a preparation method thereof. The material is a rare earth-alkaline earth-nickel-oxygen system and has a double-layer perovskite type layered crystal structure, the chemical general formula is RE1-2AE1-2Ni2O6. 9-7.0, the optimal component is La1. 8Ca1. 2Ni2O6. 95, Tc is greater than or equal to 313K under normal pressure, zero resistance and complete diamagnetism are stably presented at-40-85 DEG C, and Jc is greater than or equal to 1 * 10 < 6 > A / cm < 2 > under 77K and 0T. The preparation method comprises the steps of precursor synthesis, material mixing and matching, pre-sintering nucleation, vacuum tube sealing sintering and precise oxygen control annealing, precise regulation and control of the oxygen content and the crystal structure of the material are achieved through vacuum tube sealing oxygen control, rapid sintering and low-temperature precise annealing, continuous equipment can be replaced to achieve kilogram-level batch preparation, the yield is larger than or equal to 85%, and the production cost is low. The device can be in butt joint with an existing high-temperature superconducting material mass production line. The invention belongs to the technical field of superconducting materials, and particularly relates to a room-temperature and normal-pressure superconducting material which is high in material environment adaptability and controllable and repeatable in preparation process and a preparation method of the room-temperature and normal-pressure superconducting material.

The application relates to a hafnium-based ferroelectric film oxygen defect content control method, which comprises the following steps: configuring a hafnium-based ferroelectric film preparation raw material; setting a growth oxygen regulation parameter; preparing a hafnium-based ferroelectric film by using the hafnium-based ferroelectric film preparation raw material according to the growth oxygen regulation parameter; setting an annealing oxygen regulation parameter; performing an annealing operation on the hafnium-based ferroelectric film according to the annealing oxygen regulation parameter; setting a reannealing oxygen regulation parameter; and performing a reannealing operation on the hafnium-based ferroelectric film according to the reannealing oxygen regulation parameter. The hafnium-based ferroelectric film oxygen defect content control method provided by the application effectively regulates the oxygen content in the device from three aspects of growth oxygen, annealing oxygen and reannealing oxygen, meets the manufacturing process of the back end, and is beneficial to the research and development of hafnium-based ferroelectric memory chips.

This invention provides a method for preparing high-density, high-entropy rare-earth hafnium salt ceramics by arc remelting, belonging to the technical field of special ceramics. According to the target chemical formula (Dy... a Ho b Er c Yb d Lu e The method involves preparing a mixture of HfO2 powder and specific elemental proportions, ensuring that the molar amount of hafnium in the added HfO2 powder is less than the total molar amount of hafnium required for the target chemical formula. After pre-sintering the mixed powder into a porous framework, the framework is vacuum arc-melted under a protective atmosphere using metallic hafnium as the arc igniter. The melting of the metallic hafnium replenishes the missing hafnium in the mixture, thus precisely achieving the target composition. Multiple ingot remeltings are followed by annealing in an oxygen-containing atmosphere to compensate for oxygen vacancies and stabilize the phase structure. This method, through non-equimolar proportions of rare earth elements at the A-site and control of the closed-loop composition of hafnium, combined with arc remelting and re-oxidation annealing, can efficiently prepare high-density, high-entropy rare earth hafnium salt ceramics with a stable defective fluorite structure. It exhibits significant advantages in thermal conductivity control and irradiation defect containment.

The application provides a method for preparing high-density high-entropy rare earth hafnate ceramics by electric arc remelting, and belongs to the technical field of special ceramics. a Ho b Er c Yb d Lu e )2Hf2O7 and a specific element proportion range is prepared, and the molar amount of hafnium in the added HfO2 powder is less than the total molar amount of hafnium required by the target chemical formula; after the mixed powder is pre-sintered into a porous framework, the framework is subjected to vacuum electric arc melting under a protective atmosphere with hafnium as an arc starting body, and the missing hafnium in the preparation is supplemented after the hafnium is melted, so that the target composition is accurately realized; after multiple ingot turning remelting, oxygen vacancy compensation and phase structure stabilization are realized through oxygen-containing atmosphere annealing. Through non-equal molar ratio of A-site rare earth elements and closed-loop composition control of hafnium, combined with electric arc remelting and reoxygenation annealing, the method can efficiently prepare high-density high-entropy rare earth hafnate ceramics with stable defect-fluorite structure, and has significant advantages in thermal conductivity control and accommodation of radiation defects.

The present application provides a positioning method for a wafer conveying device on a heating machine, based on the linear relationship between the temperature of thermal oxygen annealing treatment and the thickness of the grown oxide layer, the heating temperature of the bearing surface of the wafer bearing table is adjusted in an incremental or decremental manner along the radial direction, when the wafer position on the wafer bearing table deviates, the thickness of the grown oxide layer on the wafer will also produce overall deviation, at this time, the thickness of the oxide layer is measured by multiple point linear measurement in the first direction through the center of the wafer, the maximum point is determined, and the linear fitting of all points on both sides of the maximum point is carried out, the abscissa value of the intersection point of the two linear curves is obtained as the compensation value of the wafer conveying device adjustment. The positioning method does not need to disassemble the machine parts, and can also accurately calculate the compensation value of the wafer conveying device, the operation is simple, the positioning adjustment frequency of the wafer conveying device is reduced, and the positioning result is accurate.

The application discloses a gallium oxide device preparation method based on high-temperature annealing technology and a gallium oxide device, and relates to the technical field of semiconductor preparation. The method comprises the following steps: a first barrier layer is prepared on the surface of a gallium oxide wafer, and the barrier layer plays a role in blocking a high-temperature oxygen atmosphere environment in a high-temperature oxygen annealing process; a patterning process is performed on the barrier layer for the purpose of impurity regulation of the gallium oxide wafer, and the process depth of the patterning process does not exceed the thickness of the barrier layer; the gallium oxide wafer after the above treatment is subjected to oxygen atmosphere annealing treatment; the barrier layer of the gallium oxide wafer after the annealing treatment is removed; and the surface layer of the gallium oxide wafer after the barrier layer is removed is removed. Through the annealing technology and the design of the patterning process, the problems that the oxygen atmosphere high-temperature annealing technology cannot be used for processing only the local region of the gallium oxide material and cannot be used for selectively regulating the net carrier concentration of the gallium oxide material are solved.

The present application relates to the technical field of optical coating materials, in particular to a high-transmittance optical coating material and a preparation method thereof.The present application overcomes the technical problems of low transmittance and poor adhesion of the existing optical coating materials.The present application performs ion cleaning and HMDS in-situ plasma grafting on an optical substrate, deposits a ZrO2-doped Nb2O5 stress buffer layer by high-power pulsed magnetron sputtering, constructs a gradient refractive index functional layer by double-target variable-power co-sputtering, deposits a porous SiO2-doped MgF2 surface layer under high pressure, and finally obtains the optical coating material through high-concentration ozone annealing treatment.The present application significantly enhances the adhesion of the material through chemical bonding and high-energy bombardment, eliminates interface reflection by using a gradient structure, and matches the refractive index by using a surface micro-nano structure.

The application relates to a kind of porous platinum nanotube composite carbon nanomaterial, preparation method and its application in methanol fuel cell anode catalyst, belong to methanol fuel cell anode catalyst material technical field.PVP, PAA, sodium tellurite, ammonia and water are mixed uniformly, after reaction in hydrothermal kettle, cooling is carried out, and after precipitation with acetone, tellurium nanotube is obtained by centrifugation;Subsequently, tellurium nanotube is dispersed into methanol solution and zinc nitrate and dimethyl imidazole methanol solution are added, to obtain tellurium nanotube loaded with ZIF-8 nanoparticles;On this basis, redox reaction is carried out by using chloroplatinic acid, and porous carbon loaded porous platinum nanotube material is obtained after high-temperature anaerobic annealing.The nanomaterial prepared by the application has high-quality porous structure, and the length-diameter ratio of the material, the graphitization degree of the loaded carbon and the pore structure of the material can be controlled by experimental parameters.The material shows excellent catalytic activity for electrochemical methanol oxidation reaction, has good stability and good process repeatability.

The invention relates to the technical field of optical coating materials, in particular to a high-transmittance optical coating material and a preparation method thereof. The technical problems that an existing optical coating material is low in light transmittance and poor in adhesive force are solved. The method comprises the following steps: carrying out ion cleaning and HMDS in-situ plasma grafting on an optical substrate; depositing a ZrO2 doped Nb2O5 stress buffer layer by utilizing high-power pulse magnetron sputtering; constructing a gradient refractive index functional layer through double-target variable-power co-sputtering; depositing a porous SiO2 doped MgF2 surface layer under high air pressure; and finally, carrying out high-concentration ozone annealing treatment to obtain the optical coating material. Finally, the adhesive force of the material is remarkably enhanced through chemical bonding and high-energy bombardment, and interface reflection and surface micro-nano structure matching refractive index are eliminated through a gradient structure.

The invention discloses a method for directly growing a high-quality oriented molybdenum disulfide (MoS2) film on an unannealed sapphire substrate. The core innovation of the method is as follows: (1) zinc sulfide (ZnS) is adopted as a controllable sulfur source, and controllable, continuous and stable supply of a sulfur monomer is realized by accurately regulating and controlling the concentration and the introduction time of the zinc sulfide (ZnS); (2) introducing an oxygen-driven growth regulation and control mechanism, and effectively regulating and controlling the growth of the MoS2 crystal domain by optimizing an oxygen introduction time node, oxygen concentration and the like; and (3) low-concentration oxygen is used for in-situ defect passivation, and the sulfur vacancy defect concentration in the MoS2 thin film is remarkably reduced and repaired. Experimental results show that the oriented MoS2 film grown based on the method has excellent optical quality, the photoluminescence intensity of the oriented MoS2 film can reach 40000 counts when the laser power is 32.5 uW, the sulfur vacancy defect of molybdenum disulfide can be effectively passivated through low-concentration oxygen annealing, and the photoluminescence intensity of the oriented MoS2 film is improved by dozens of times.

The application provides a preparation method of a gallium oxide field effect transistor, which comprises the following steps: providing a substrate; epitaxially growing an n-type gallium oxide channel layer on the substrate; depositing a source electrode and a drain electrode on both ends of the n-type gallium oxide channel layer respectively; preparing a photoetching mask pattern in a preset channel region of the n-type gallium oxide channel layer; etching the n-type gallium oxide channel layer to obtain a plurality of discontinuous etching pits, and forming a fin-shaped mesa on the n-type gallium oxide channel layer by two side walls of adjacent etching pits close to each other; the two side walls of the fin-shaped mesa extend from the source electrode side to the drain electrode side in a way of moving away from each other; performing a thermal oxygen annealing treatment on the fin-shaped mesa region by using a dielectric protection; and depositing a gate electrode on the upper surface and the two side walls of the fin-shaped mesa and the n-type gallium oxide channel layer close to the source electrode. The application prepares an inclined Fin channel, so that the gate electrode has a higher surface area to volume ratio and has a better gate control capability, thereby improving the breakdown characteristics of the device.