Method for preparing germanium oxide interface repairing layer by using in-situ ozone oxidation

Abstract

The invention discloses a method for preparing a germanium oxide interface repairing layer by using in-situ ozone oxidation. The method comprises the steps of: selecting a Ge substrate, removing a natural oxide layer on the surface of the Ge substrate, then transferring the Ge substrate in a cavity of an atomic layer deposition system, and depositing a layer of Al2O3 film on the surface of the Ge substrate to serve as an O3 barrier layer in an oxidation process; oxidizing at an Al2O3 / Ge interface to form a layer of a GeOx interface layer by using a precursor O3 in the atomic layer deposition system as an oxidant; placing the Ge substrate with the ultra-thin GeOx interface layer formed at the Al2O3 / Ge interface into the atomic layer deposition reaction cavity, and depositing a high-k gate medium on the Al2O3 film; after gate medium deposition is carried out successively, performing annealing and low-temperature oxygen annealing by utilizing a rapid annealing furnace to further improve the quality of the oxide gate medium and improve the quality of the high-k medium / Al2O3 / GeOx / Ge interface. The method for preparing the germanium oxide interface repairing layer by using the in-situ ozone oxidation realizes interface stability and high quality required by a gate laminate layer in a Ge-based MOS (Metal Oxide Semiconductor) device, and is suitable for a Ge-based MOS capacitor, an MOSFET (MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and other devices including the Ge-based gate laminate layer.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for preparing ultra-thin germanium oxide (GeO) on a Ge substrate by in-situ ozone oxidation. x ) interface repair layer method. Background technique [0002] Germanium (Ge) has been extensively studied as the most promising substrate material for metal-oxide-semiconductor transistors (MOSFETs) in recent years. Compared with silicon, germanium has a high carrier mobility, and its drive current is small, which is suitable for low-temperature processes. In order to realize high-performance small-sized Ge-based MOSFETs, high-k gate stacks must have low interface state density and effectively passivated interface layers. The interface of high-k gate dielectric / Ge needs a special interface layer as a diffusion barrier layer to prevent the interface reaction between high-k metal oxide and Ge substrate under heat treatment conditions. The reported methods of interface ...

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Problems solved by technology

Other existing methods for preparing the germanium oxide interface layer require relatively harsh conditions and relatively high consumption costs

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