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based on si 3 no 4 Preparation method of charge storage device coated with metal oxide nanocrystal

A technology of charge storage and nanocrystals, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., and can solve problems such as complex processes

Active Publication Date: 2020-10-27
ANYANG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The usual method for preparing metal oxide nanocrystals is to use multiple metal oxides as the storage layer, and then anneal the storage layer, which is complicated.

Method used

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  • based on si <sub>3</sub> no <sub>4</sub> Preparation method of charge storage device coated with metal oxide nanocrystal
  • based on si <sub>3</sub> no <sub>4</sub> Preparation method of charge storage device coated with metal oxide nanocrystal

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Effect test

Embodiment 1

[0015] Embodiment 1: Based on Si 3 N 4 Coated Fe 2 o 3 The preparation process of the nanocrystalline charge storage device is as follows:

[0016] a) Place the Si substrate in a mixed solution of absolute ethanol and acetone, ultrasonically clean it for 1 minute to remove impurities on the surface of the substrate, then place the substrate in a dilute hydrofluoric acid solution to remove oxides on the surface of the substrate, The substrate is then placed on the substrate table of the pulsed laser deposition system, and the SiO 2 、Si 3 N 4 , metal Fe and Al targets are placed on the target chassis, and the pressure in the deposition chamber is 1×10 -5 Pa, the substrate table temperature is room temperature;

[0017] b) Using a pulsed laser deposition system to deposit a layer of SiO with a thickness of 3 nm on the surface of the Si substrate 2 The thin film acts as a tunneling layer;

[0018] c) Using a pulsed laser deposition system on SiO 2 Deposit the first layer...

Embodiment 2

[0023] Embodiment 2: Based on Si 3 N 4 Coated La 2 o 3 The preparation process of the nanocrystalline charge storage device is as follows:

[0024] a) Place the Si substrate in a mixed solution of absolute ethanol and acetone, ultrasonically clean it for 1 minute to remove impurities on the surface of the substrate, then place the substrate in a dilute hydrofluoric acid solution to remove oxides on the surface of the substrate, The substrate is then placed on the substrate table of the pulsed laser deposition system, and the SiO 2 、Si 3 N 4 and metal La and Al targets are placed on the target chassis, and the pressure in the deposition chamber is 1×10 -5 Pa, the substrate table temperature is room temperature;

[0025]b) Using a pulsed laser deposition system to deposit a layer of SiO with a thickness of 3 nm on the surface of the Si substrate 2 The thin film acts as a tunneling layer;

[0026] c) Using a pulsed laser deposition system on SiO 2 Deposit the first laye...

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Abstract

The invention discloses a Si-based 3 N 4 Method for preparing charge storage devices coated with metal oxide nanocrystals, deposited on SiO by pulsed laser 2 Si is first deposited sequentially on the surface of the tunneling layer 3 N 4 and metal M film, and then in-situ oxygen annealing to fully oxidize metal M to M 2 O 3 Nanocrystalline, followed by deposition of Si 3 N 4 thin film, forming Si 3 N 4 Coating the storage layer of metal oxide nanocrystals, and then sequentially depositing SiO 2 The barrier layer and Al electrode form a charge storage device based on Si3N4-coated metal oxide nanocrystals, where M can be selected from Fe and La.

Description

technical field [0001] The invention belongs to the field of microelectronic devices and materials thereof, and relates to a Si-based 3 N 4 A method for preparing a charge storage device coated with metal oxide nanocrystals. Background technique [0002] With the continuous progress of the information society, people have higher and higher requirements for data storage, so non-volatile memory devices have received extensive attention. Among many non-volatile memory devices, silicon (Si)-oxide (SiO 2 )-Silicon Nitride (Si 3 N 4 )-Oxide (SiO 2 )-polysilicon type (SONOS) charge trap storage device has become a promising storage device due to its high stability and good compatibility with semiconductor processes. 2 is the tunneling layer, Si 3 N 4 SiO as the storage layer next to the polysilicon electrode 2 for the barrier layer. Under the programming operation of the device, charges pass through the tunneling layer, enter the storage layer, and are captured by defect ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11568H01L21/28H10B43/30
Inventor 汤振杰李荣张希威
Owner ANYANG NORMAL UNIV
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