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A single crystal linbo 3 Thin film memristor and preparation method thereof

A memristor and single crystal technology, which is applied in the field of single crystal LiNbO3 thin film memristor and its preparation, can solve the problem of high threshold voltage of single crystal thin film LiNbO memristor, and achieve fast etching speed, optimized retention and durability The effect of force and uniform etching

Active Publication Date: 2022-01-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0009] In view of the above problems or deficiencies, in order to solve the problem of high threshold voltage of the existing single crystal thin film LiNbO memristor, the present invention provides a single crystal LiNbO 3 Thin film memristor and method thereof, lower threshold voltage of memristor and good durability

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  • A single crystal linbo <sub>3</sub> Thin film memristor and preparation method thereof
  • A single crystal linbo <sub>3</sub> Thin film memristor and preparation method thereof
  • A single crystal linbo <sub>3</sub> Thin film memristor and preparation method thereof

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[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] The concrete way that this embodiment adopts is:

[0028] Step 1, Pt / Ti / SiO 2 The Z-cut single crystal LiNbO on the substrate is placed above in the etching chamber. Afterwards, the vacuum pump is turned on, and the air pressure in the etching chamber is evacuated to a vacuum. Wait until the vacuum degree reaches 2×10 -4 Pa, open the argon valve to allow the argon in the argon bottle to enter the etching chamber, and adjust the argon valve to make the vacuum in the etching chamber 2×10 -2 . After the gas pressure in the etching chamber is stabilized, turn on the ion source switch and set the parameters: 400V (electron beam voltage), 80V (accelerating current) and 20mA (electron beam current). After the parameters are set, turn on the etch button to energize the filament.

[0029] The energy flowing through the filament io...

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Abstract

The invention relates to the fields of ion etching, oxygen annealing and memristor, in particular to a single crystal LiNbO 3 Thin film memristor and its preparation method. The present invention passes Ar + Etching technology bombards the solid surface to sputter surface atoms and be stripped layer by layer to further reduce the thickness of LiNbO, and at the same time introduce oxygen vacancies required for memristors. The method of introducing oxygen vacancies through a vacuum annealing process is used instead of the prior art, and the threshold voltage is reduced at the same time. And by annealing in an oxygen atmosphere to repair defects such as oxygen vacancies on the surface of the material, the introduced oxygen vacancies are reduced, and the concentration of oxygen vacancies on the surface of the material is adjusted. Finally, the present invention solves the problem of high threshold value of single-crystal thin-film memristor, and optimizes the retention and durability of the device at the same time.

Description

technical field [0001] The invention relates to the fields of ion etching, oxygen annealing and memristor, in particular to a single crystal LiNbO 3 Thin film memristor and preparation method thereof, based on Ar + Etching and oxygen annealing techniques. Background technique [0002] Memristor is the fourth basic electronic component proposed by Chua in 1971, and was experimentally confirmed by Hewlett-Packard researchers in 2008. Due to the advantages of high integration, low power consumption and fast computing speed, memristors have important application potential in the fields of non-volatile memory (RRAM) and logic operations. Based on the polymorphic characteristics of memristors, researchers use specific electrical pulses to study the synaptic characteristics of brains, which shows that memristors also have great potential in the field of neural network adaptive learning. [0003] The performance of memristive devices is usually characterized by switching ratio (t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/883H10N70/026
Inventor 帅垚梁翔王杰军乔石珺秦霞杨小妮
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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