Cell structure of super junction semiconductor device and technology realizing method

Abstract

The invention discloses a deep-groove-type cell structure of a super junction semiconductor device and a technology realizing method. The cell structure comprises a first-type heavily doped region, a first-type epitaxial drift region is arranged on the first-type heavily doped region, second-type epitaxial column regions are arranged on the two sides inside the epitaxial drift region, a grid groove is formed between the second-type epitaxial column regions, a grid polysilicon and dielectric isolation layer is arranged inside the groove, a second-type doped well region is formed between the grid groove and a semi-insulation column region, a first-type doped source region is formed on the upper portion of the well region, a second-type epitaxial region is arranged inside the second-type doped well region, and a metal buried layer is arranged under the second-type epitaxial region. The deep-groove-type cell structure can effectively reduce series resistance of the well region of the super junction product, prevent opening of parasitic transistors, and therefore the avalanche breakdown resistance capacity of the device is improved, and the related reliability of the product is improved.

Description

technical field [0001] The invention relates to a super-junction device structure in a semiconductor integrated circuit, in particular to a structural design and process realization method of a deep-groove super-junction semiconductor device. Background technique [0002] Superjunction semiconductor devices are the intrinsic driving force of ever-evolving power-electronic systems. Especially in terms of energy saving, dynamic control, noise reduction and so on. The product is mainly used to control the energy between the energy source and the load, and should have the characteristics of high precision, fast speed and low power consumption. [0003] However, the application of superjunction devices is limited by their avalanche tolerance. like image 3 As shown, when the super junction device is turned off instantaneously (the gate voltage of the product drops to 0 or negative voltage), due to the presence of load current, the inductive load acts as a negative current sourc...

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Problems solved by technology

When the avalanche energy acts on the device, the heat of the device exceeds the limit that the device itself can withstand, and the device is damaged

And as figure 2 As shown, when the device undergoes avalanche breakdown, the temperature of the device continues to rise and the parasitic transistor is turned on, resulting in a significant increase in the avalanche tolerance of the device

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