mos chip parallel current sharing integrated switch and its packaging module
A technology of integrated switches and packaged modules, which is applied in the direction of electronic switches, electrical components, electric solid devices, etc., can solve the problems of MOS tube burnout, large on-state resistance, and large parameter differences, so as to reduce switching losses, increase output power, The effect of large conduction current
Active Publication Date: 2017-06-27
FOSHAN JIECHUANG TECH
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Problems solved by technology
However, the power MOS tubes currently used are usually packaged in a single chip, and the working current of a single tube can only reach 100A. The parameters of each component vary greatly, and the working current cannot meet the needs of high-power users.
In the case of high current, multiple tubes are used in parallel at present. Due to the difference in the parameters of the single tube and the difference in the wiring, the working current of each tube is unbalanced, which leads to the burning of the MOS tube.
However, the multi-tube parallel connection is troublesome in production and installation, the interference between the lines is large, and the heat dissipation is poor, which leads to the complex structure of the entire application system and low reliability.
[0003] In addition, in the application of high-current electronic switches, the current electronic switches have the characteristics of large on-state resistance and low current, which have great limitations in practical applications.
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[0014] like figure 1 , 2 As shown, a MOS chip parallel current sharing integrated switch includes multiple MOS chips 1 connected in parallel, and the gate G of each MOS chip 1 is connected in series with a thermistor 2 capable of sensing the corresponding working temperature of the MOS chip 1 . The integrated circuit can be regarded as a high-power MOS tube with temperature compensation, which can be applied to the rectification circuit of the DC / DC PWM converter with large current output. After the input terminals of all thermistors 2 are connected in parallel, they can be regarded as the gate trigger electrodes of the MOS transistors, when the drains D of all MOS chips are connected in parallel, they can be regarded as the drains of the MOS transistors, and when the sources S of all MOS chips are connected in parallel, they can be regarded as MOS transistors. source of the tube. Specifically, the thermistor 2 is a negative temperature coefficient thermistor.
[0015] The ...
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The invention discloses a MOS chip parallel current equalizing integrated switch and its packaging module, which includes a plurality of parallel MOS chips, and each MOS chip gate is connected in series with a thermistor capable of sensing the working temperature of the corresponding MOS chip. The bottom plate of the packaging module is provided with a drain welding part and a trigger electrode welding part. The source substrate of the MOS chip is electrically and thermally connected to the bottom plate. The thermistor is next to the corresponding MOS chip and is thermally connected to the bottom plate. The drain connection terminals are all electrically connected to the drain welding part, the thermistor is connected in series between the source of the MOS chip and the trigger electrode welding part, and the trigger electrode welding part is electrically connected to the trigger electrode connection terminal. An integrated switch composed of multiple parallel-connected MOS chips can carry a larger current and realize dynamic current sharing of parallel-connected MOS chips.
Description
technical field [0001] The invention relates to the technical field of integrated circuits and packaging modules thereof. Background technique [0002] Among the current common switching tubes, fast recovery switching diodes (FRDs) and Schottky silicon diodes (SBDs) are generally used. Their forward voltage drop is about 0.1 ~ 1.1V, or even above. Therefore, when the current is large, the on-state loss is also large. If the output voltage is lower than 3V, then in the total loss of the switching converter, the on-state loss reaches a degree close to the forward voltage drop of FRD or SBD. The power supply voltage of modern high-speed integrated circuits, reducing rectification loss, and improving low-voltage output have become the key to the efficiency of DC / DC converters. Forward voltage drop VF and on-state resistance RDS of low-voltage power MOSFET (referred to as MOS tube) (ON) small to milliohm level. Therefore, in the DC / DC PWM converter with low-voltage and high-...
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IPC IPC(8): H03K17/14H01L25/00
CPCH01L2924/0002
Inventor 任航
Owner FOSHAN JIECHUANG TECH