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How to deal with through holes

A treatment method and interlayer dielectric layer technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unstable effects, achieve stable effects, avoid damage, and avoid sudden drops in pH value

Active Publication Date: 2015-09-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

However, the effect of the aforementioned method is not stable in the actual production process.

Method used

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  • How to deal with through holes
  • How to deal with through holes
  • How to deal with through holes

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Embodiment Construction

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0030] provide as Figure 5 The shown semiconductor structure includes the lower interlayer dielectric layer 100 and the lower metal layer 250 in the lower metal interconnection layer, and also includes the interlayer dielectric layer 110 in the upper metal interconnection layer, an...

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Abstract

The invention relates to a method for processing a through hole. The method comprises the following steps that: a through hole is provided and is used for metal interconnection, wherein the through hole is particularly formed in an in interlayer dielectric layer and a titanium nitride layer arranged at the interlayer dielectric layer and is formed by dry etching; the through hole is cleaned by an EKC solution; after the cleaning with the EKC solution, the titanium nitride layer at the edge of the through hole is etched back by utilizing ozone deionized water, so that the opening of the through hole is widened; and after the etching back, the through hole is cleaned by using HF acid. Because the opening of the through hole is widened by using the ozone deionized water solution, the damage caused by oxidation of lower-layer copper by hydrogen peroxide due to sudden reduction of a pH value in the processing mode of mixing of EKC and hydrogen peroxide having oxidability can be avoided. Moreover, the whole processing method has the stable effect; the technology can be controlled; and no adverse effect is caused easily.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for improving the performance of a metal interconnection structure. Background technique [0002] With the development of ultra-large-scale integrated circuits (ULSI), the feature size of semiconductor devices is continuously reduced, and the line width is narrowed, which leads to the increase of resistance-capacitance coupling between interconnection lines, which leads to signal transmission delay, interference noise enhancement and power consumption. The dispersion increases and the device frequency is suppressed. These problems have become bottlenecks in the development of high-speed, high-density, low-power and multi-functional integrated circuits. Use low dielectric constant (Low k) dielectric material or ultra-low dielectric constant (U Low k) dielectric material instead of traditional SiO 2 Dielectric (k≈4) as an interlayer dielectric material is an impor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76801
Inventor 刘焕新袁竹根胡春周
Owner SEMICON MFG INT (SHANGHAI) CORP
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