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A kind of preparation method of yxsm1-xbco superconducting film doped with rare earth element

A yxsm1-xbco, superconducting thin film technology, applied in the field of doping modification of YBCO high temperature superconducting thin film materials, can solve the problem of critical current density decrease, achieve the effect of improving field performance and low cost

Inactive Publication Date: 2014-10-22
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, YBCO high-temperature superconducting materials have a disadvantage, that is, the critical current density transported by them decreases significantly with the increase of the applied magnetic field.

Method used

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  • A kind of preparation method of yxsm1-xbco superconducting film doped with rare earth element
  • A kind of preparation method of yxsm1-xbco superconducting film doped with rare earth element
  • A kind of preparation method of yxsm1-xbco superconducting film doped with rare earth element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step S100: preparing palladium (Pd) nano-dots:

[0030] Step S101: a certain amount of palladium acetylacetonate is dissolved in n-propionic acid to obtain palladium ions (Pd + ) concentration is the precursor solution of 0.001mol / L;

[0031] Step S102: apply the precursor solution in step S101 on the LAO single crystal by spin coating, the coating time is 50 seconds, and the rotation speed is 3000 rpm;

[0032] Step S103: Sintering the precursor film in step S102 at 1000° C. for 20 minutes under argon protection to generate palladium (Pd) nano-dots on the surface of the substrate to obtain a palladium (Pd) nano-dot-modified LAO substrate;

[0033] Step S200: Prepare YBCO precursor solution by low-fluorine process:

[0034] Step S201: Dissolve yttrium acetate and barium acetate in deionized water at a molar ratio of 1:2, stir and dissolve at 30°C, then add trifluoroacetic acid at a molar ratio of yttrium acetate to trifluoroacetic acid of 1:3 , after reacting at 30°C...

Embodiment 2

[0043] Step S100: preparing palladium (Pd) nano-dots:

[0044] Step S101: dissolving a certain amount of palladium acetylacetonate into n-propionic acid to obtain a precursor solution with a palladium ion solubility of 0.002 mol / L;

[0045] Step S102: apply the precursor solution in step S101 on the LAO single crystal by spin coating, the coating time is 60 seconds, and the rotation speed is 3500 rpm;

[0046] Step S103: Sintering the precursor film in step S102 at 1200° C. for 60 minutes under argon protection to generate palladium (Pd) nano-dots on the surface of the substrate to obtain a substrate decorated with palladium (Pd) nano-dots;

[0047] Step S200: preparing Y through a low-fluorine process 0.75 SM 0.25 BCO precursor solution:

[0048] Step S201: Dissolving yttrium acetate and barium acetate in deionized water at a molar ratio of 1:2, stirring and dissolving at 40°C, then adding trifluoroacetic acid at a molar ratio of yttrium acetate to trifluoroacetic acid of ...

Embodiment 3

[0058] Step S100: preparing palladium (Pd) nano-dots:

[0059] Step S101: dissolving a certain amount of palladium acetylacetonate into n-propionic acid to obtain a precursor solution with a palladium ion solubility of 0.003 mol / L;

[0060] Step S102: Coating the precursor solution in step S101 on the LAO single crystal by spin coating, the coating time is 70 seconds, and the rotation speed is 4000 rpm;

[0061] Step S103: Sintering the precursor film in step S102 at a temperature of 1300° C. for 120 minutes under the protection of high-purity argon to generate palladium (Pd) nano-dots on the surface of the substrate to obtain a substrate decorated with palladium (Pd) nano-dots;

[0062] Step S200: preparing Y through a low-fluorine process 0.5 SM 0.5 BCO precursor solution:

[0063] Step S201: Dissolve yttrium acetate and barium acetate in deionized water at a molar ratio of 1:2, stir and dissolve at 40°C, then add trifluoroacetic acid at a molar ratio of yttrium acetate t...

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Abstract

The invention discloses a preparation method of a YBCO coating superconducting thin film. According to the preparation method, a YxSm(l-x)BCO superconducting thin film is prepared on a lanthanum perchlorate LAO substrate modified by a palladium nanometer dot, wherein x is greater than or equal to 0 and is less than or equal to 1. The preparation method comprises the following steps: (1) preparing the Pd palladium nanometer dot; (2) preparing a YBCO precursor solution; (3) preparing a SmBCO precursor solution; (4) preparing a YxSm(l-x)BCO precursor solution, wherein x is greater than or equal to 0 and is less than or equal to 1; and (5) sintering YxSm(l-x)BCO, wherein x is greater than or equal to 0 and is less than or equal to 1. The preparation method disclosed by the invention is simple and practicable and has the advantages that the distribution density of the palladium nanometer dot can be controlled at arbitrary, the raw materials are low in cost and easily available, vacuum equipment is not needed during preparation, and the cost is low; and the prepared thin film has relatively high critical transition temperature and good biaxial texture and field performance.

Description

Technical field: [0001] The invention relates to a doping modification method of YBCO high-temperature superconducting thin film material, and belongs to the technical field of YBCO coating superconducting thin film preparation. technical background: [0002] YBCO superconducting material, due to its own series of advantages, is considered to be one of the superconducting materials most likely to be applied on a large scale. However, YBCO high-temperature superconducting materials have a disadvantage, that is, the critical current density transported by them decreases significantly with the increase of the applied magnetic field. However, the application of YBCO superconducting materials is usually under a certain external magnetic field, so in order to meet the practical requirements, it is not only required to have a high current transport capability under zero magnetic field, but also have a large capacity under high field. the ability to carry current. It is found that...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L39/24H10N60/01
Inventor 刘志勇杨枫蒋玉荣常方高唐亚楠
Owner HENAN NORMAL UNIV
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