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Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof

A binary material, nano-dot technology, applied in the field of high-temperature superconducting materials

Inactive Publication Date: 2011-09-14
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems existing in the preparation process of the existing coated conductor transition layer, and provide a simple and efficient preparation method that can effectively control the shape, number and distribution of the introduced nano-dots before YBCO deposition

Method used

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  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof
  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof
  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0030] 1) dissolving zirconium acetylacetonate and cerium acetylacetonate into n-propionic acid to obtain a precursor solution by dissolving zirconium ions and cerium ions in a molar ratio of 0.6:0.4 and a total concentration of zirconium ions and cerium ions of 0.02 mol / L;

[0031] 2) Apply the precursor solution to the SrTiO with a deviation of 20 degrees from the (100) direction by dipping 3 On a single crystal substrate, pulling SrTiO 3 The speed of the single crystal substrate metal substrate is 150 mm / min to obtain the precursor film;

[0032] 3) in H 2 Under gas protection conditions, the precursor film was sintered at 1050 °C for 60 minutes to obtain Zr 0.6 Ce 0.4 o 2 nano dots.

[0033] 4) The YBCO film was prepared by the low-fluorine MOD process on the transition layer substrate coated with nanodots.

[0034] Zr 0.6 Ce 0.4 o 2 The surface morphology is as figure 1 As shown, nanodots can be clearly seen in the AFM-2D photo, with an average height of 15 nano...

Embodiment 2

[0036] 1) Dissolving zirconium acetylacetonate and cerium acetylacetonate into n-propionic acid at a molar ratio of zirconium ions to cerium ions of 0.9:0.1, with a total concentration of zirconium ions and cerium ions of 0.002mol / L, to obtain a precursor solution ;

[0037] 2) Apply the precursor solution to the SrTiO with a deviation of 8 degrees from the (100) direction by dipping 3 On the single crystal substrate, pull the single crystal substrate at a speed of 10 mm / min to obtain the precursor film;

[0038] 3) Under the protection of Ar gas, the precursor film was sintered at 950°C for 500 minutes to obtain Zr 0.9 Ce 0.1 o 2 nano dots.

[0039] 4) The YBCO film was prepared by the low-fluorine MOD process on the transition layer substrate coated with nano-dots.

[0040] Zr 0.9 Ce 0.1 o 2 The three-dimensional surface morphology of figure 2 As shown, the nanodots are uniformly dispersed in this AFM-3D photo. The particle density is 60 / μmP2 ; The size is uniform...

Embodiment 3

[0042] 1) dissolving zirconium acetylacetonate and cerium acetylacetonate in n-propionic acid, according to the molar ratio of zirconium ions and cerium ions of 0.85:0.15, the total concentration of zirconium ions and cerium ions is 0.007mol / L, to obtain a precursor solution;

[0043] 2) Apply the precursor solution to the LaAlO3 single crystal substrate deviated from the (100) direction by 10 degrees by spin coating, the rotation speed is 4000rpm, and the time is 60s to obtain the precursor film;

[0044] 3) in H 2 Mixing with Ar (H 2 The volume percentages of Ar and Ar are 4% and 96%, respectively) under gas protection conditions, the precursor film was sintered at 1150 ° C for 300 minutes to obtain Zr 0.85 Ce 0.15 o 2 nano dots.

[0045] 4) The YBCO film was prepared by the low-fluorine MOD process on the transition layer substrate coated with nanodots.

[0046] image 3 for Zr 0.85 Ce 0.15 o 2 The two-dimensional map of the surface topography; Figure 4 for Zr 0...

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Abstract

The invention discloses binary material (Zr,Ce)O2 nanodots, and a preparation method and application thereof, belonging to the technical field of high-temperature superconducting materials. The preparation method comprises the following steps: dissolving zirconium acetylacetone and cerium acetylacetone in a zirconium-to-cerium mol ratio of (1-x):x into propanoic acid to obtain a precursor liquid; spreading the precursor liquid onto a monocrystal substrate to obtain a precursor film; in a protective gas atmosphere, sintering the precursor film at 950-1200 DEG C for 10-500 minutes to obtain discontinuous Ce-doped ZrO2 nanodots of which the heights are 5-60nm, the diameters are 20-150nm and the grain density is 10-100 / mu m. A low-fluorine MOD (metal-organic deposition) technique is used for preparing a YBCO (yttrium barium copper oxide) film on a transition layer substrate coated with nanodots to enhance the superconductivity of the YBCO film under the action of an external magnetic field. The shape, number and distribution of the nanodots disclosed by the invention can be effectively controlled in a simple way.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting materials, and relates to a preparation technology for surface modification of a transition layer of a high-temperature superconducting coating conductor, in particular to a binary material (Zr, Ce)O 2 Nanodots, preparation methods and applications. Background technique [0002] The second-generation coated superconductor of rare earth barium copper oxide mainly based on YBCO, due to its high irreversible field, high current carrying capacity, low AC loss, and potential price advantage, was recognized as early as the end of the 1980s. The prediction will have a very broad application prospect. However, superconducting materials are mostly used in the environment of an external magnetic field, and their engineering critical current density (J e ) decreases sharply with the increase of the external magnetic field. where the magnetic field and J e There is a certain relat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C04B41/52
Inventor 刘敏徐燕叶帅吴紫平吕昭程艳玲马麟邱火勤董传博索红莉
Owner BEIJING UNIV OF TECH
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