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Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof

A binary material, nanodot technology, applied in the field of high temperature superconducting materials

Inactive Publication Date: 2012-11-21
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems existing in the preparation process of the existing coated conductor transition layer, and provide a simple and efficient preparation method that can effectively control the shape, number and distribution of the introduced nano-dots before YBCO deposition

Method used

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  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof
  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof
  • Binary material (Zr,Ce)O2 nanodots, and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1) dissolving zirconium acetylacetonate and cerium acetylacetonate into n-propionic acid to obtain a precursor solution by dissolving zirconium acetylacetonate and cerium acetylacetonate in a molar ratio of 0.6:0.4 of zirconium ion and cerium ion, and the total concentration of zirconium ion and cerium ion is 0.02mol / L;

[0031] 2) Apply the precursor liquid to SrTiO which is 20 degrees deviated from the (100) direction by the dipping method 3 On a single crystal substrate, pulling SrTiO 3 The speed of the metal baseband of the single crystal substrate is 150 mm / min to obtain a precursor film;

[0032] 3) in H 2 Under gas protection, the precursor film was sintered at 1050 °C for 60 minutes to obtain Zr 0.6 Ce 0.4 O 2 Nanodots.

[0033] 4) YBCO films were prepared by low-fluorine MOD process on the transition layer substrate coated with nanodots.

[0034] Zr 0.6 Ce 0.4 O 2 The surface morphology of figure 1 As shown, from this AFM-2D photo, nano-dots can be cl...

Embodiment 2

[0036] 1) Dissolving zirconium acetylacetonate and cerium acetylacetonate into n-propionic acid, the molar ratio of zirconium ion and cerium ion is 0.9: 0.1, and the total concentration of zirconium ion and cerium ion is 0.002mol / L to obtain a precursor solution ;

[0037] 2) Apply the precursor liquid to SrTiO which is 8 degrees deviated from the (100) direction by the dipping method 3 On the single crystal substrate, the speed of pulling the single crystal substrate is 10 mm / min to obtain a precursor film;

[0038] 3) Under Ar gas protection, the precursor film was sintered at 950 °C for 500 minutes to obtain Zr 0.9 Ce 0.1 O 2 Nanodots.

[0039] 4) The YBCO film was prepared by the low-fluorine MOD process on the transition layer substrate coated with nano-dots.

[0040] Zr 0.9 Ce 0.1 O 2 The three-dimensional surface topography of figure 2 As shown, the nanodots are uniformly dispersed in this AFM-3D photo. The particle density is 60 / μmP2 ; The size is uniform, t...

Embodiment 3

[0042] 1) dissolving zirconium acetylacetonate and cerium acetylacetonate in n-propionic acid, according to the molar ratio of zirconium ions and cerium ions of 0.85:0.15, the total concentration of zirconium ions and cerium ions is 0.007mol / L, to obtain a precursor solution;

[0043] 2) Apply the precursor solution to the LaAlO3 single crystal substrate deviated from the (100) direction by 10 degrees by spin coating, the rotation speed is 4000rpm, and the time is 60s to obtain the precursor film;

[0044] 3) in H 2 Mixing with Ar (H 2 The volume percentages of Ar and Ar are 4% and 96%, respectively) under gas protection conditions, the precursor film was sintered at 1150 ° C for 300 minutes to obtain Zr 0.85 Ce 0.15 o 2 nano dots.

[0045] 4) The YBCO film was prepared by the low-fluorine MOD process on the transition layer substrate coated with nanodots.

[0046] image 3 for Zr 0.85 Ce 0.15 o 2 The two-dimensional map of the surface topography; Figure 4 for Zr 0...

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Abstract

The invention discloses binary material (Zr,Ce)O2 nanodots, and a preparation method and application thereof, belonging to the technical field of high-temperature superconducting materials. The preparation method comprises the following steps: dissolving zirconium acetylacetone and cerium acetylacetone in a zirconium-to-cerium mol ratio of (1-x):x into propanoic acid to obtain a precursor liquid;spreading the precursor liquid onto a monocrystal substrate to obtain a precursor film; in a protective gas atmosphere, sintering the precursor film at 950-1200 DEG C for 10-500 minutes to obtain discontinuous Ce-doped ZrO2 nanodots of which the heights are 5-60nm, the diameters are 20-150nm and the grain density is 10-100 / mu m. A low-fluorine MOD (metal-organic deposition) technique is used for preparing a YBCO (yttrium barium copper oxide) film on a transition layer substrate coated with nanodots to enhance the superconductivity of the YBCO film under the action of an external magnetic field. The shape, number and distribution of the nanodots disclosed by the invention can be effectively controlled in a simple way.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting materials, relates to a preparation technology for surface modification of a conductor transition layer of a high-temperature superconducting coating, and in particular relates to a binary material (Zr, Ce)O 2 Nanodots, preparation method and application. Background technique [0002] The second generation of rare earth barium copper oxide coated superconductors dominated by YBCO have been used as early as the late 1980s due to their high irreversible field, high current carrying capacity, low AC loss and potential price advantage. It is predicted that there will be very broad application prospects. However, superconducting materials are mostly used in the environment of external magnetic field, and their engineering critical current density (J e ) decreases sharply with the increase of the applied magnetic field. where the magnetic field and J e There is a certain rel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50C04B41/52
Inventor 刘敏徐燕叶帅吴紫平吕昭程艳玲马麟邱火勤董传博索红莉
Owner BEIJING UNIV OF TECH
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