Low-igniting-voltage miniature semiconductor bridge igniting assembly

Abstract

The invention discloses a low-igniting-voltage miniature semiconductor bridge igniting assembly. According to the low-igniting-voltage miniature semiconductor bridge igniting assembly, a semiconductor bridge transduction element chip is fixed in a trapezoid groove of a miniature unsymmetrical ceramic electrode plug through bonding agents, two metal electrode bonding pads on the semiconductor bridge transduction element chip are connected with two leg wire electrodes of the ceramic electrode plug respectively in a welding mode through bonding metal wires, two leg wires and a semiconductor bridge are in circuit connection, and the position above a semiconductor bridge transduction element is filled with electric heating sensitive igniting powder. The minimum full igniting voltage of the low-igniting-voltage miniature semiconductor bridge igniting assembly is as low as 3.83V(10 microfarads), the minimum full igniting energy is 0.074mJ, the safe current is not smaller than 200mA, the igniting time is 12.6-16.5 microseconds, the low-igniting-voltage miniature semiconductor bridge igniting assembly has the advantages of being low in igniting energy, short in action time, good in effect consistency and good in antistatic and radio frequency resistant capacity, and the low-igniting-voltage miniature semiconductor bridge igniting assembly is suitable for application prospects of micro electro mechanical systems.

Description

Technical field [0001] The patent of the present invention relates to a semiconductor bridge ignition device, especially a semiconductor bridge ignition device capable of reliable ignition under low ignition voltage input conditions and miniaturized volume. Background technique [0002] The semiconductor bridge ignition part is generally composed of a semiconductor bridge transducer chip, a substrate or an electrode plug for fixing the transducer chip, foot wires, bonding metal wires, energetic materials and a packaging shell. When the ignition current or voltage is input, heat will be generated when the current passes through the energy-converting element of the semiconductor bridge, and the energetic material will be ignited. By adjusting the semiconductor bridge material, doping concentration, bridge area, thickness, substrate heat dissipation performance and structure, packaging structure, electrostatic discharge structure, ignition performance of energetic materials, ma...

AI Technical Summary

Problems solved by technology

Grooves cannot be made on the glass plug, and the semiconductor bridge chip can only be fixed on the surface of the glass plug, which will deteriorate the pressure resistance of the charge, so it is rarely used

[0006] In Chapter 4 of Yang Guili's dissertation "Study on Energy Conversion and Ignition Laws of Micro-Semiconductor Bridges" in 2010, she pointed out that for the current low-energy excitation (below 5V) bridge-wire EEDs in my country, the safety current is not greater than 50mA. For the hidden danger of poor safety, the size of the semiconductor bridge is miniaturized. By reducing the volume and energy of the bridge heated by the electric thermal explosion, the volume and ignition energy of the bridge are much smaller than the conventional size of the insensitive semiconductor bridge.

It is undoubtedly a huge challenge to rely on the technical level of the existing EPD design for such a combination of size and ignition performance parameters.

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