Infrared detector structure for improving spectral flatness

Abstract

The invention discloses an infrared detector structure for improving response spectral flatness. The infrared detector structure for improving the spectral flatness comprises metal electrodes, a substrate, a photosensitive area and other media. The metal electrodes are located on the left side and the right side of the rectangular photosensitive area. The other media are located on the upper side and the lower side of the rectangular photosensitive area. The other media are the same as the photosensitive area in material and are electrically isolated from the metal electrodes and the photosensitive area. The infrared detector structure is simple and effective, non-linear response spectral shapes are eliminated, and the spectral flatness is improved.

Description

technical field [0001] The invention relates to a structure of an infrared detector, in particular to an infrared detector structure and a preparation method for improving the flatness of a response spectrum. Background technique [0002] Modern infrared detection technology is of great significance to the development of national economy and society. With the continuous development of remote sensing instrument technology, it has developed from point target detection, scanning imaging, and multispectral scanning imaging to hyperspectral imaging. Focal planes, multi-band infrared focal planes, and smart integrated detector components are developing. On the one hand, infrared detectors play an irreplaceable role in earth observation. On the other hand, the device center distance of the infrared focal plane chip has moved from hundreds of microns to tens or even tens of microns. When the device structure size is close to or within an order of magnitude of the photon wavelengt...

AI Technical Summary

Problems solved by technology

Depend on figure 1 (a) It can be seen that the peak response wavelength of the device is greater than 10 microns, and the response curve becomes curved near the peak; after the antireflection film is grown on the photosensitive surface of the device, the flatness of the response near the peak can be improved (such as figure 1 (b)); but in its response band, as the wavelength increases, the flatness of the response is far from ideal

The reason is that the fluctuation of infrared photons is not considered, and it is not realized that the non-light-sensitive area will also have a greater impact on the light field distribution of the light-sensitive area.

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