Manufacturing method of low-temperature non-gold ohmic contact of GaN-based high-electronic-mobility transistor

Abstract

The invention discloses a manufacturing method of a low-temperature non-gold ohmic contact of a GaN-based high-electronic-mobility transistor. The manufacturing method comprises the steps that an epitaxial wafer of the GaN-based high-electronic-mobility transistor is coated with optical resist and an ohmic contact pattern is formed through photo-etching; a potential barrier layer of the GaN-based HEMT is etched and thinned from a hole area of the ohmic contact pattern through a low-damage etching technology; wet-method surface processing is conducted on an etched area and multiple layers of non-gold ohmic metal are deposited on the processed epitaxial wafer; the optical resist on the surface of the epitaxial wafer of the GaN-based HEMT and the multiple layers of non-gold ohmic metal deposited on the optical resist are stripped; the low-temperature non-gold ohmic contact is formed through annealing. By means of the manufacturing method, the technology temperature of the GaN-based HEMT is lowered, the technical bottleneck of GaN-based HEMT and Si-CMOS technology compatibility is broken through, the manufacturing cost of the GaN-based HEMT can be lowered easily and the industrialization process of GaN-based power electronic devices is quickened.

Description

technical field [0001] The invention relates to the technical field of GaN-based high electron mobility transistor (HEMT) preparation, in particular to a method for manufacturing a GaN-based high electron mobility transistor without gold ohmic contact at low temperature. Background technique [0002] With the rapid development of GaN-based RF power, especially power switching devices for civilian use, the performance advantages of GaN-based HEMTs over traditional Si power devices are becoming more and more obvious. Its breakdown voltage, operating temperature, and conversion efficiency are far away. It is better than Si-based MOSFET devices, but lower than Si devices in terms of energy consumption. Although silicon-based GaN epitaxial technology has enabled the size of epitaxial wafers to approach the size of mainstream Si wafers (currently up to 8 inches), the development of large-scale processing of GaN-based HEMTs is relatively lagging behind, which seriously restricts th...

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Problems solved by technology

[0007] In view of this, the main purpose of the present invention is to provide a low-temperature gold-free ohmic contact manufacturing method for GaN-based high electron mobility transistors, so as to solve the key technical problems of GaN-based HEMT processing in Si-CMOS process lines, and reduce the cost of GaN-based HEMTs. The manufacturing cost of HEMT promotes the industrialization of GaN-based power electronic devices

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