Solar battery antireflection film manufacturing method
A technology of solar cells and anti-reflection coatings, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of cell downgrade sales loss, cell sorting complexity, etc., to achieve narrower color system, reduced color difference, Effect of improving conversion efficiency
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Embodiment 1~5
[0013] Embodiment 1~5: the manufacture method of the solar cell anti-reflection film with one layer of silicon nitride film layer and one layer of silicon dioxide film layer, comprises the steps:
[0014] (1) Deposit silicon nitride film layer: place the P-type polysilicon wafer that has completed acid texturing, phosphorus diffusion and etching cleaning in the coating equipment, and pass the reaction gas NH 3 and SiH 4 , deposit a uniform silicon nitride film layer 2 on the surface of the silicon wafer; control the NH 3 and SiH 4 Gas flow rate, SiH 4 and NH 3 The flow rate ratio under the gas standard state is shown in Table 1;
[0015] (2) Deposit silicon dioxide film layer: Then pass the reaction gas into the coating equipment as N 2 O and SiH 4 , deposit a uniform silicon dioxide film layer 3 on the surface of the silicon wafer, control the SiH 4 and N 2 The flow rate of O gas and make the SiH 4 and N 2 The flow ratio of O gas under the standard state is shown in...
Embodiment 6~10
[0019] Embodiment 6~10: the manufacture method of the solar cell anti-reflection film with two layers of silicon nitride film layer and one layer of silicon dioxide film layer, comprises the steps:
[0020] (1) Deposit the first layer of silicon nitride film: place the P-type polysilicon wafer that has completed acid texturing, phosphorus diffusion and etching cleaning in the coating equipment, and pass the reaction gas NH 3 and SiH 4 , deposit a uniform silicon nitride film layer I 21 on the surface of the silicon wafer; control the NH 3 and SiH 4 Gas flow rate, SiH 4 and NH 3 The flow rate ratio under the gas standard state is shown in Table 2;
[0021] (2) Deposit the second layer of silicon nitride film: after the deposition of silicon nitride film I is completed, the reaction gas NH is introduced into the coating equipment again 3 and SiH 4 , deposit a layer of uniform silicon nitride film layer II 22 on the surface of the silicon wafer; control the NH 3 and SiH 4...
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