Solar silicon wafer cutting steel wire

Abstract

The invention relates to a solar silicon wafer cutting steel wire which comprises a steel wire body and non-circle grooves formed in the outer surface of the steel wire body. The non-circle grooves are evenly formed in the outer surface of the steel wire body at equal interval, and the non-circle grooves are in prism shapes. The multiple non-circle grooves are formed in the steel wire body, the capacity of the cutting steel wire to carry silicon carbide particles in mortar is high, the cutting resistance to the cutting steel wire is greatly reduced, the silicon rod cutting efficiency is easily improved, technical space is provided for reducing the steel wire diameter of the cutting steel wire, the cutting efficiency is high, a cutting gap is small, the thickness of a silicon wafer can be further reduced, the using amount of the mortar is less, the silicon rod cutting losses can be reduced, and the wafer discharging rate is improved.

Description

Technical field: [0001] The invention relates to the technical field of metal wire processing, in particular to a solar silicon wafer cutting steel wire. Background technique: [0002] Solar polysilicon wafers are the most important raw material for solar cells, and the common production method of polysilicon wafers is multi-wire cutting. During multi-wire cutting, the rotation of the guide wheel of the slicer drives the cutting steel wire to move rapidly. When the cutting steel wire moves rapidly, it carries the silicon carbide particles in the mortar to grind and cut the ingot, thereby processing the ingot into silicon wafers. The cutting steel wire currently used is a straight steel wire with a smooth surface and copper plating. The larger the diameter of the steel wire, the stronger the ability to carry silicon carbide, which is more conducive to the cutting of silicon wafers. However, the increase in the diameter of the steel wire will not only increase the cutting gap,...

AI Technical Summary

Problems solved by technology

The cutting steel wire currently used is a straight steel wire with a smooth surface and copper plating. The larger the diameter of the steel wire, the stronger the ability to carry silicon carbide, which is more conducive to the cutting of silicon wafers. However, the increase in the diameter of the steel wire will not only increase the cutting gap, reduce The output rate of silicon rods is high, and the cutting resistance is large, which consumes a lot of mortar. The minimum diameter of the existing cutting steel wire is 120 microns, and the tensile strength of the cutting steel wire will be low, and it is easy to break when cutting. The minimum thickness of silicon wafers cut by a standard steel wire is 200 microns. No matter how small the thickness is, it will be damaged by the cutting resistance of the cutting steel wire. In order to further reduce the production cost of silicon wafers, increase the yield of wafers, and reduce the thickness of silicon wafers, Reducing the diameter of cutting steel wire is the technical development direction recognized by the industry

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