Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoresist stripper composition

A technology of photoresist and stripping solution, which is applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve the problems of harmfulness to the environment and human body, re-precipitation, etc., and achieve less harm to the environment or human body, reduce harm, and reduce The effect of fees

Active Publication Date: 2019-07-19
DONGJIN SEMICHEM CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] That is, the existing photoresist stripping liquid composition uses aprotic solvents such as NMF (N-methylformamide) and NMP (N-methylpyrrolidone) as the main solvent. Although this solvent has the advantage of excellent stripping ability, it also has Disadvantages that are harmful to the environment or human body
Moreover, if the conventional aprotic polar solvent is used, although the photoresist (PR) can be easily dissolved, there is a problem of PR re-precipitation during water washing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0042] In order to evaluate the performance of the stripping solutions prepared in Examples 1-5 and Comparative Examples 1-6, a stripping test and a metal corrosion test were implemented through the following process.

[0043] 1. Manufacture of test pieces (test pieces for testing peeling ability)

[0044] On the entire surface of the glass substrate, a conventional photoresist (DONGJINSEMICHEM product, DTFR-N200) was coated with a thickness of 1 micron, and then hardened at a temperature of about 150°C to prepare a test piece.

[0045] 2. Peel ability test

[0046] Each of the prepared stripping solutions of Examples and Comparative Examples was put into a spraying device and heated to 50°C. Then, spray the stripping solution on the prepared test piece for about 1 minute, then wash with ultrapure water, and dry with nitrogen. Whether or not peeling was checked by visual observation and a microscope, and the results are shown in Table 2.

[0047] [Table 2]

[0048] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a stripping liquid composition for removing photoresist, capable of replacing solvents such as NMP which is hazardous to human body, and which is excellent in stripping, thereby including N,N-dimethyl propionamide. The stripping liquid composition for removing photoresist includes: 10-85 % by weight of N,N-dimethyl propionamide, 1-30 % by weight of cyclic amines, 10-85 % by weight of amphiprotic polar solvent, and 0-50 % by weight of ultra-pure water.

Description

technical field [0001] The present invention relates to a photoresist stripping liquid composition comprising two or more components including cyclic amines, polar solvents and non-polar solvents. Background technique [0002] Photoresist (photo-resist) is an indispensable material in the photolithography process, and the photolithography process is used to manufacture integrated circuits (Integrated circuit, IC), large scale integrated circuits (large scale integration, LSI), It is one of the common processes for semiconductor devices such as very large scale integration (VLSI) and image display devices such as liquid crystal display (LCD) and plasma display device (PDP). [0003] After the photo-lithography processing is finished, the photoresist is removed by a stripping solution at high temperature. During this process, while the photoresist is being removed, the underlying metal film will be corroded by the stripping solution. Therefore, there is a need for a method th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/32G03F7/34G03F7/422G03F7/425G03F7/426
Inventor 许舜范金炳郁赵泰杓尹锡壹郑世桓张斗瑛朴善周
Owner DONGJIN SEMICHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com