Photoresist stripper composition

A technology of photoresist and stripping solution, which is applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve the problems of harmfulness to the environment and human body, re-precipitation, etc., and achieve less harm to the environment or human body, reduce harm, and reduce The effect of fees
CN103631103BActive Publication Date: 2019-07-19DONGJIN SEMICHEM CO LTD
5 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DONGJIN SEMICHEM CO LTD
Publication Date
2019-07-19
Patent Text Reader

Abstract

The present invention relates to a stripping liquid composition for removing photoresist, capable of replacing solvents such as NMP which is hazardous to human body, and which is excellent in stripping, thereby including N,N-dimethyl propionamide. The stripping liquid composition for removing photoresist includes: 10-85 % by weight of N,N-dimethyl propionamide, 1-30 % by weight of cyclic amines, 10-85 % by weight of amphiprotic polar solvent, and 0-50 % by weight of ultra-pure water.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a photoresist stripping liquid composition comprising two or more components including cyclic amines, polar solvents and non-polar solvents. Background technique

[0002] Photoresist (photo-resist) is an indispensable material in the photolithography process, and the photolithography process is used to manufacture integrated circuits (Integrated circuit, IC), large scale integrated circuits (large scale integration, LSI), It is one of the common processes for semiconductor devices such as very large scale integration (VLSI) and image display devices such as liquid crystal display (LCD) and plasma display device (PDP).

[0003] After the photo-lithography processing is finished, the photoresist is removed by a stripping solution at high temperature. During this process, while the photoresist is being removed, the underlying metal film will be corroded by the stripping solution. Therefore, there is a need for a method th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More