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Electrostatic chuck

A technology of electrostatic chuck and dielectric layer, which is applied in the direction of holding devices, circuits, and electrical components that apply electrostatic attraction, and can solve the problem of reduced thermal conductivity at the contact interface between semiconductor wafers and solids, reduced electrostatic adsorption, and gas leakage from sealing rings Increase and other issues

Active Publication Date: 2014-03-26
TOTO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, problems such as a decrease in electrostatic adsorption force, an increase in gas leakage from the seal ring, and a decrease in the thermal conductivity of the semiconductor wafer-solid contact interface will occur, and the electrostatic chuck has to be replaced in a short period of time.

Method used

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Examples

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Embodiment

[0131] Hereinafter, the electrode layer 12 will be further exemplified according to the embodiment. Prepare Pd powder and alumina powder (99.99% purity), make metallization paste, and make electrostatic chuck.

[0132] Figure 4 is a diagram illustrating an electrode layer.

[0133] Figure 4 A cross-sectional SEM image of the electrode layer 12 after firing is shown. Figure 4 The middle white part is Pd.

[0134] Such as Figure 4 As shown, the electrode layer 12 has no gaps and is dense, and the Pd particles are also closely attached to each other and continuous. Therefore, the electrical conductivity is also good, and the adhesion between the electrode layer 12 and the high-purity alumina layers (first dielectric layer 111 and second dielectric layer 112 ) above and below it is also in a good state.

[0135] In addition, since high-purity alumina and electrode raw materials that do not contain sintering aids and the like are mixed and fired, the contact area between ...

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Abstract

The invention provides an electrostatic chuck capable of maintaining at a desired temperature an object to be processed that is adhered and held. The electrostatic chuck includes: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, a temperature control plate provided on the second major surface side; and a heater provided between the electrode layer and the temperature control plate, and the first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%.

Description

technical field [0001] The present invention relates to an electrostatic chuck, and more specifically, to an electrostatic chuck capable of maintaining an object to be treated by adsorption and holding at a desired temperature. Background technique [0002] In the plasma processing chamber for etching, chemical vapor deposition (CVD (Chemical Vapor Deposition)), sputtering (sputtering), ion implantation, ashing, etc., as an adsorption and holding object to be processed such as semiconductor wafers or glass substrates The unit uses an electrostatic chuck. [0003] Electrostatic chucks are produced by sandwiching electrodes between ceramic substrates such as alumina and firing them. Electrostatic chucks apply electrostatic adsorption power to built-in electrodes, and adsorb substrates such as silicon wafers by electrostatic force. [0004] However, residues and products derived from the semiconductor wafer or the coating film adhere to the inner surface of the chamber after ...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/67
CPCH02N13/00H01L21/6833H01L21/68757B23Q3/15C04B35/053H01L21/683
Inventor 穴田和辉和田琢真
Owner TOTO LTD
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