Active matrix organic light emitting diode panel and manufacturing method thereof

Abstract

The invention provides an active matrix organic light emitting diode panel and a manufacturing method thereof. The active matrix organic light emitting diode panel comprises a first conductive layer, a grid insulation layer, an oxide semiconductor layer, an etch stopping layer and a second conductive layer; the grid insulation layer is formed above the first conductive layer; the oxide semiconductor layer comprises preset patterns; the preset patterns of the oxide semiconductor layer comprise the first area and the plurality of second areas; four border portions are formed at the edges of the first area and the first conductive layer; every second area is square patterns and is located on the border portion side which is far away from the etch stopping layer. Compared with the prior art, grid patterns of the first conductive layer or the preset patterns of the oxide semiconductor layer can be improved and accordingly lateral etching cracks which are formed when the oxide semiconductor layer is etched can keep away from the dry etching area of the etch stopping layer and accordingly the short circuit between a lower layer of grid electrodes and an upper layer of source electrodes or drain electrodes is effectively avoided and the reliability of the product process is improved.

Description

technical field [0001] The invention relates to a display panel, in particular to an active matrix organic light emitting diode panel and a manufacturing method thereof. Background technique [0002] Organic light emitting diodes (Organic Light Emitting Diode, OLED) can be divided into passive matrix driving (Passive Matrix OLED, PMOLED) and active matrix driving (Active Matrix OLED, AMOLED) according to the driving method. Among them, the PMOLED does not emit light when data is not written, but only emits light during data writing. This driving method is simple in structure, low in cost, and easy to design, and is mainly suitable for small and medium-sized displays. The biggest difference between AMOLED and PMOLED is that each pixel has a capacitor to store data, so that each pixel can maintain a light-emitting state. Since the power consumption of AMOLED is significantly lower than that of PMOLED, and its driving method is suitable for the development of large-size and h...

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Problems solved by technology

However, the risk of this overlapping area is that once the interlayer gate insulating layer (Gate Insulator, GI) between the lower gate and the upper source / drain is damaged, the gate terminal will have a very high probability of being separated from the Source / drain short circuit phenomenon, which is also the biggest reason for the low yield of etch-stop oxide semiconductor (such as IGZO) components, and its yield loss is about 50% to 90%

Specifically, the IGZO oxide semiconductor layer is the carrier transport layer of the component, and is located between the lower gate and the upper source / drain. After the IGZO etching process, lateral etching is very easy to occur at the edge of the lower gate. Cracks are generated, and then the dry etching process of the etch stop layer will erode the gate insulating layer through the above-mentioned cracks, causing the underlying gate to be exposed, and a short circuit between the gate and the source / drain occurs.

In addition, on the region where the gate line and the data line intersect each other, the gate insulating layer is deposited thinner on the upper portion of the gate line than on the side surface of the gate line, thereby generating a stepped portion, resulting in a gap in the gate line. Defects occur on the side surface, such as a short circuit between the gate line and the data line

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