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Insulated gate bipolar transistor and preparation method thereof

A technology of bipolar transistors and insulated gates, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of increasing the difficulty of device manufacturing and small on-state voltage drop, so as to improve the range of high-frequency applications and reduce Effect of on-resistance

Active Publication Date: 2014-03-26
青岛惠科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Generally speaking, from the front structure of the IGBT, the IGBT can be divided into two types: planar type and trench gate type; from the breakdown characteristics of the IGBT, it can be divided into two types: the punch-through type and the non-punch-through type. The P+ surface on the back of the device has an N+ buffer layer, and its on-state voltage drop is smaller than that of the non-punch-through type, and the punch-through type device also increases the difficulty of manufacturing the device

Method used

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  • Insulated gate bipolar transistor and preparation method thereof
  • Insulated gate bipolar transistor and preparation method thereof

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Embodiment 1

[0012] figure 1 It is a cross-sectional view of an insulated gate bipolar transistor of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0013] An insulated gate bipolar transistor, comprising: a rear P+ emitter region 1, which is a polycrystalline semiconductor silicon material of P conductivity type, with a thickness of 0.2um and a surface doping concentration of boron atoms of 5E17cm -3 ; N+ buffer layer 2, located on the back P+ emitter region 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 5E13cm -3 ~1E16cm -3 , with a thickness of 30um; the N-base region 3, located on the N+ buffer layer 2, is a semiconductor silicon material of N conductivity type, with a thickness of 200um and a doping concentration of phosphorus atoms of 5E13cm -3 ; P-type base region 4, located on the N-base region 3, is a semiconductor silicon material ...

Embodiment 2

[0021] figure 2 It is a cross-sectional view of the second insulated gate bipolar transistor of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0022] An insulated gate bipolar transistor, comprising: a rear P+ emitter region 1, which is a polycrystalline semiconductor silicon material of P conductivity type, with a thickness of 0.2um and a surface doping concentration of boron atoms of 5E17cm -3 ; N+ buffer layer 2, located on the back P+ emitter region 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 5E13cm -3 ~1E16cm -3 , with a thickness of 30um; the N-base region 3, located on the N+ buffer layer 2, is a semiconductor silicon material of N conductivity type, with a thickness of 200um and a doping concentration of phosphorus atoms of 5E13cm -3 ; P-type base region 4, located on the N-base region 3, is a semiconductor silicon...

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Abstract

The invention discloses an insulated gate bipolar transistor. A P type base region, an N+ collector region, a gate oxide and a gate dielectric are arranged on the surface of an N type base region, and a polycrystalline P-type semiconductor material is arranged on the lower surface of the N type base region to be used as a back P+ emitter region of a device. The insulated gate bipolar transistor reduces the on-resistance of the device and improves the high-frequency application ability of the device. The invention also provides a preparation method of the insulated gate bipolar transistor.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor, and also relates to a preparation method of the insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a combination of gate voltage control characteristics of metal oxide semiconductor field effect transistor (MOSFET) and low on-resistance characteristics of bipolar transistor (BJT). Semiconductor power devices have the characteristics of voltage control, large input impedance, low driving power, small on-resistance, low switching loss and high operating frequency. They are ideal semiconductor power switching devices and have broad development and application prospects. [0003] Generally speaking, from the front structure of the IGBT, the IGBT can be divided into two types: planar type and trench gate type; from the breakdown characteristics of the IGBT, it can be divided into two types: the punch-through type and the non-punch-through...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0804H01L29/36H01L29/66333H01L29/7393
Inventor 朱江
Owner 青岛惠科微电子有限公司
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