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Method for preparing Ge-doped alpha-phase iron trioxide nanosheet array membrane

A nano-sheet array and ferric oxide technology, which is applied in the field of preparation of α-phase ferric oxide nano-sheet array films, can solve the problems of dependence, expensive instruments and the like, and achieve the effects of low cost and simple process

Inactive Publication Date: 2014-04-02
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] Although these methods of the above-mentioned prior art have the advantages of mature operation technology and easy control of film thickness, they are more dependent on expensive instruments, and it is difficult to simultaneously complete the treatment of α-Fe 2 o 3 Doping and Nanostructuring of Nanomaterials

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  • Method for preparing Ge-doped alpha-phase iron trioxide nanosheet array membrane
  • Method for preparing Ge-doped alpha-phase iron trioxide nanosheet array membrane
  • Method for preparing Ge-doped alpha-phase iron trioxide nanosheet array membrane

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[0031] Such as figure 1 As shown, the β-FeOOH nanorod array film is firstly obtained by hydrothermal reaction, and then used as a template to provide Ge colloid solution with high reactivity as a doping precursor by using LAL technology. After hydrothermal treatment, it can conduct electricity in FTO. In situ construction of Ge-doped α-Fe on glass substrate 2 o 3 Nanosheet array films. Ge-doped α-Fe 2 o 3 The doping concentration of the nanosheet array thin film depends on the concentration of Ge colloidal solution added, and the thickness of the thin film can be controlled by the thickness of the β-FeOOH template, and the relationship between the two is proportional.

[0032] Figure 2a It is the SEM photo of the obtained β-FeOOH nanorod array. From the top view, it can be clearly seen that β-FeOOH is composed of a large number of dense nanorod arrays. Figure 2a The inset in the lower right corner of the center is a side SEM photo of the β-FeOOH nanorod array, and the ...

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Abstract

The invention discloses a method for preparing a Ge-doped alpha-phase iron trioxide nanosheet array membrane. According to the method, a beta-FeOOH nanorod array membrane is firstly prepared on a FTO (fluorine-doped tin oxide) conductive glass substrate through a hydrothermal method, then the array membrane is taken as a substrate template, Ge nanometer colloidal solution obtained through liquid phase laser corrosion (LAL) is taken as a reaction precursor of impurity atom Ge, and the Ge doped alpha-Fe2O3 nanosheet array membrane is obtained through hydrothermal treatment. The method is simple, has low cost, realizes doping and can effectively control the nanostructure of alpha-Fe2O3.

Description

technical field [0001] The invention relates to an in-situ construction of Ge-doped α-Fe 2 o 3 The technology of the nanosheet array thin film particularly relates to a preparation method of a Ge-doped α-phase ferric oxide nanosheet array thin film. Background technique [0002] Exploring and developing photoanode catalytic materials with superior photo-water splitting performance in order to obtain clean, efficient, safe and green hydrogen energy is an important way to solve the increasing energy crisis. α-Fe 2 o 3 It is a typical narrow bandgap (capable of absorbing visible light) semiconductor material with a forbidden band width of 2.1-2.2eV, so it can use about 40% of solar energy, and the theoretical value of solar energy conversion efficiency can reach 12.9%. , which makes it have broad application prospects in the field of photolysis of water to produce hydrogen. In addition, α-Fe 2 o 3 The cost of α-Fe is low, non-toxic and harmless, abundant in the earth’s c...

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Application Information

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IPC IPC(8): C03C17/34B01J23/835
Inventor 梁长浩刘俊叶一星
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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