A light emitting diode and its manufacturing method

Abstract

The invention provides a light emitting diode and a manufacturing method thereof. In the method, a selective growth layer is firstly prepared on a surface of the substrate; and then a light-emitting structure layer is selectively epitaxially grown in the non-selective growth layer region on the surface of the substrate, and the light-emitting structure layer has an inverted trapezoidal structure and at least includes an N-type Semiconductor layer, quantum well layer, P-type semiconductor layer; then use photolithography technology, ICP technology or RIE technology to etch to the N electrode area; make a transparent conductive layer; make P electrode and N electrode; prepare on the transparent conductive layer The first reflector layer, and the second reflector layer are prepared on the other surface of the substrate; finally, the slivers complete the manufacture of independent light-emitting diodes. The light-emitting diode produced by the epitaxial selective growth technology in the present invention can reduce the total reflection and absorption of light by the chip, facilitate the emission of light from the inside of the light-emitting diode, improve the light output efficiency of light on the side wall of the chip, and use the two-way reflector to improve the fluorescence efficiency. The excitation efficiency of the powder is improved, thereby improving the brightness of the chip.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a light-emitting diode with an inverted trapezoidal structure and a manufacturing method thereof. Background technique [0002] Light-emitting diode (LED) has the characteristics of green environmental protection, long life, high efficiency and energy saving, anti-harsh environment, simple structure, small size, light weight, fast response, low working voltage and good safety, so it is known as the successor to incandescent lamps, The fourth generation of lighting power supply after fluorescent lamps and energy-saving lamps. In the mid-1990s, through unremitting efforts, Japan’s Nichia Chemical Company broke through the key technology of manufacturing blue light-emitting diodes, and developed the technology of covering blue LEDs with phosphors to produce white light sources. However, there are still many problems to be solved in semiconductor lighting,...

AI Technical Summary

Problems solved by technology

figure 2 This is the light output effect diagram of a traditional quadrilateral chip. For a traditional light-emitting diode, when the incident angle of light is greater than 23.5° and less than 66.5°, the light of the chip will only be reflected back and forth inside the chip, and photons cannot escape from the chip. external, resulting in light loss from the chip

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