A high-power array LED chip surface heat dissipation structure and manufacturing method

Abstract

A high-power array LED chip surface heat dissipation structure and its manufacturing method, in which a layer of aluminum nitride and a layer of copper are sequentially deposited from bottom to top in the isolation groove between the array LED chip light-emitting units to form a grid-shaped metal layer, namely A heat sink channel for leading out heat generated by the chip light emitting units is formed between the chip light emitting units. The invention can effectively improve its heat dissipation performance. Moreover, the process is simple and easy to implement, suitable for both laboratory research and development and mass production, and can effectively solve the current technical problem of heat dissipation of high-power array LED chips, which is of great significance for realizing high-efficiency and high-power LED lighting.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a high-power array LED chip surface heat dissipation structure and a manufacturing method. Background technique [0002] At present, the operating voltage of ordinary DC nitride LEDs on the market does not exceed 5V, and our daily electricity consumption is usually 110V-240V, which is extremely inconvenient to use. The emergence of nitride array LED effectively solves the above problems. The array LED chip refers to the integration of LED light-emitting units on the substrate through a certain arrangement, so that each light-emitting unit bears a certain voltage division, and the purpose of using under high voltage can be achieved by adjusting the number of light-emitting units. The conversion efficiency is greatly improved. Ordinary low-power LEDs have limited their application in daily lighting due to their low operating voltage. Nitride array LEDs can be directly connected to A...

AI Technical Summary

Problems solved by technology

[0003] At present, the heat dissipation method adopted by ordinary DC nitride LEDs is usually to fix the LED chip base (usually sapphire) on the heat-conducting metal with thermally conductive adhesive. This method has a better heat dissipation effect for low-power LED chips, but for high-power, Array LED chips that generate a lot of heat do not have a good heat dissipation effect. The reason is that the thermal conductivity of sapphire is poor, only about 20-30 W / m·k, so that when the heat generated is small, the heat can be dissipated slowly, and the chip temperature is at Within the normal range, but when the chip power is high, the heat will accumulate in the chip and cause the temperature to rise

[0004] For the relatively new flip-chip packaging technology at present, because the light is emitted from the surface of sapphire, it effectively avoids the phenomenon that the lead wires block the light, and at the same time most of the heat is emitted from the chip The other side flows into the substrate, which effectively avoids the problem of poor thermal conductivity of the sapphire substrate, so that the heat dissipation effect and electro-optical conversion efficiency are significantly improved, but when the chip power is large, there will also be poor heat dissipation.

In the nitride array LED chip, the distance between adjacent light-emitting units is only 10-30 microns. Considering the problem of inclination during photolithography, the distance will be smaller, which will cause the heat generated by the light-emitting units to be unable to dissipate well. The luminous efficiency of the light-emitting unit will be greatly reduced with the increase of the chip temperature. If the distance between the light-emitting units is simply increased, the effective light-emitting area will be reduced.

The problem of heat dissipation is an urgent problem to be solved for high-power array LEDs. If this problem is not effectively solved, the application of nitride array LED chips will be greatly restricted.

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