Electroplating production line for preparing cigs absorbing layer

Abstract

The invention belongs to the technical field of preparation of solar thin-film cells, and especially relates to an electroplating production line for preparing a CIGS absorption layer. The electroplating production line for preparing the CIGS absorption layer comprises a feeding apparatus at the head end and for supplying substrates, at least four electroplating tanks, multiple cleaning tanks arranged at the front and the rear of any one electroplating tank, a material collecting apparatus at the tail end, transmission apparatuses arranged at inlets and outlets of any one electroplating tank and the cleaning tanks, and a control system electrically connected with the feeding apparatus, the cleaning tanks, the electroplating tanks and the material collecting apparatus and used for controlling synchronization action thereof; each electroplating tank is provided with a sub-tank; the central part of the sub-tank is provided with a conveying apparatus, and the lateral side of the sub-tank is provided with anodes immersing in an electroplate liquid in a hanging manner; and the substrates attach to the side of the conveying apparatus and are opposite to the anodes. The electroplating production line provided by the invention is shortened in production line length, small in occupied space and less in technological steps, only performing single-surface deposition on the substrate, and helps to guarantee the surface uniformity of the deposited CIGS absorption layer.

Description

technical field [0001] The invention belongs to the technical field of manufacturing solar thin film battery equipment, and in particular relates to an electroplating production line for preparing a CIGS absorbing layer. Background technique [0002] CIGS (copper indium gallium selenide) thin film solar cells have excellent light absorption constant, only need 1.5 micron ultra-thin absorption layer, stable photoelectric conversion efficiency, wide spectral response range, adjustable energy band, strong radiation resistance, no light It has the advantages of light-induced gain, low-light gain, light weight, low cost, and easy installation, which have become the focus of research in the field of solar energy. Its typical structure is: metal back electrode Mo layer, CIGS absorption layer, buffer layer CdS, window layer high resistance i:ZnO, low resistance ZnO:Al, and front gate electrode. [0003] The CIGS absorber layer is composed of four elements: Cu, In, Ga, and Se. The p...

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Problems solved by technology

[0009] 3. The flow of the electroplating solution 803 in the plating solution tank 802 is not smooth, and the bubbles generated during electroplating cannot be discharged in time and effectively, and it is easy to produce mottling on the CIGS absorbing layer deposited by electroplating, which seriously affects the product quality

[0010] In addition, in the horizontal electroplating method disclosed in US Patent Publication No. US2007 / 0227633A1, since the horizontal straight line electroplating is adopted, the substrate is not bent, the production line is too long, and the space occupied is large. In addition, when using this method of electroplating, the anode is located at Under the substrate, there is also the problem that the bubbles precipitated by the cathode cannot be discharged, and when the anode is placed on the substrate, there is also the problem of poor flow of the electroplating solution on the cathode surface, which will affect the surface quality of the CIGS absorbing layer deposited by electroplating

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