Reconstruction-equivalent chirp and equivalent half apodization-based DFB semiconductor laser and preparation method thereof

Abstract

The invention discloses a preparation method of a reconstruction-equivalent chirp (REC) and equivalent half apodization-based distributed feed-back (DFB) semiconductor laser. The grating structure of the laser is formed by reconstruction-equivalent chirp technique-based sampled Bragg gratings. The phase shifts of the gratings are introduced by using the equivalent chirp technology design and are called as equivalent phase shifts; and the positions of the equivalent phase shifts are located in regional ranges of + / -20% of the sampled Bragg grating centers. One equivalent phase shift is shifted into all shadow gratings except one at the 0 level. The apodization is realized equivalently by changing sampling structures, namely, duty ratios, of the sampled gratings gradually along the cavity length direction of the laser; and the equivalent apodization is only introduced into the sampled gratings at one sides of the equivalent phase shift regions, so that the equivalent half apodization is realized.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, relates to optical fiber communication, photonic integrated chip, photoelectric sensor and other photoelectric information processing, and proposes an equivalent method based on the reconstruction-equivalent chirp and equivalent half-edge apodized DFB semiconductor laser and its preparation method A new idea for the design and fabrication of half-apodized sampled Bragg gratings is based on reconstruction-equivalent chirp and equivalent half-apodized sampled Bragg gratings and their applications in DFB semiconductor lasers and photonic integrated chips. Background technique [0002] The photon integration technology that has appeared in recent years conforms to the development of the times and is opening a new era of optical networks. Photon integration technology is considered to be the most cutting-edge and promising field of optical fiber communication. In the Silicon Valley laboratory...

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Problems solved by technology

While the coupling coefficient depends on the waveguide parameters, it is difficult to separate the control

In addition, if the laser is a separate device, the output laser power of the two end faces of the laser can be distributed by coating one end face of the laser with a high-reflection film and the other end face with an anti-reflection film, but the high-reflection film will bring random The influence of phase, the negative impact of random phase on the laser is uncontrollable, and the negative effect of random phase has not been solved yet

Moreover, for photonic integrated chips (PICs), various devices such as monitors, lasers, modulators, multiplexers, etc. are integrated together through selective area epitaxial growth technology or docking growth technology, and the DFB cannot be changed by coating methods. The ratio of the output power of the two ends of the semiconductor laser

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