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Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation

An electrolytic oxidation and plasma technology, which is applied in the field of surface treatment and asymmetric pulse topology, can solve the problems of bidirectional pulse requiring multiple DC sources, large volume of plasma electrolytic oxidation power supply, etc.

Active Publication Date: 2017-01-04
西安同润电子工程有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide an asymmetric pulse topology for plasma electrolytic oxidation, which solves the problems that the existing power supply for plasma electrolytic oxidation is bulky and requires multiple DC sources when generating bidirectional pulses

Method used

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  • Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation
  • Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation

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Embodiment Construction

[0023] The structure of the asymmetric pulse topology used in the plasma electrolytic oxidation of the present invention is as follows figure 1 As shown, it consists of a DC source 1, a coupled inductor 2 composed of an inductor L1 and an inductor L2, a fully controlled power switching device 3, an isolation driver 4, a controller 5 and a plasma electrolytic oxidation working tank 6.

[0024] The positive pole of the DC source 1 is connected to the same-named end of the inductor L1, the different-named end of the inductor L1 is connected to the same-named end of the inductor L2, and the different-named end of the inductor L2 is connected to one end of the plasma electrolytic oxidation working tank 6. The other end of the plasma electrolytic oxidation working tank 6 is connected to the emitter of the fully-controlled power switching device 3, and the emitter of the fully-controlled power switching device 3 is connected to the negative pole of the DC source 1 at the same time, an...

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Abstract

The invention discloses an asymmetric impulse topology used for plasma electrolytic oxidation and a surface treatment method. According to the method, asymmetrical impulses are used, when an input voltage is positive, the technology process of plasma electrolytic oxidation is performed, and a ceramic layer is in a growth stage; when the input voltage is negative, growth of the ceramic layer is interrupted, the surface of a workpiece is washed by a power supply, and an electric arc generated during processing is extinguished, so that roughness of the ceramic layer on the surface of the workpiece is lowered and the surface is compact and smooth.

Description

technical field [0001] The invention belongs to the technical field of power supply, and in particular relates to an asymmetric pulse topology for plasma electrolytic oxidation, and also relates to a surface treatment method using the topology. Background technique [0002] Plasma electrolytic oxidation is also called micro-arc oxidation. Through this technology, in a suitable electrolyte, the light alloy (aluminum, magnesium, titanium and other alloys) to be treated is used as the anode, and stainless steel is used as the cathode, and then an appropriate electric field is applied to produce Complex chemical, electrochemical, plasma and other reaction processes allow the in-situ growth of a ceramic oxide film with excellent properties such as compactness, wear resistance, corrosion resistance, and insulation on the metal surface, so as to achieve the purpose of surface protection. This technology controls the structure and thickness of the oxide film by controlling the elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M9/02C25D11/02
Inventor 陈桂涛杨欣然孙强黄西平孙向东
Owner 西安同润电子工程有限公司