Alkaline chemical mechanical polishing liquid
A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., and can solve problems such as excessive edge erosion and unsuitable metal materials.
Inactive Publication Date: 2014-05-07
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
But this kind of fine polishing liquid is not suitable for metal materials, nor can it solve the problem of excessive edge erosion (EOE)
Method used
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[0033] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.
[0034] The polishing liquid was prepared according to the ingredients and proportions of each embodiment in Table 1, and mixed evenly.
[0035] The formula of table 1 embodiment 1-11 of the present invention and comparative example 1-2
[0036]
[0037] Among them, IRGAMET42* is a commercially available passivating agent, which is a derivative of TTA, and TTA is tolyltriazole.
[0038] Nonylphenol polyoxyethylene ether is selected from IGEPAL CO850 (Ethoxylated nonylphenol).
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Abstract
The invention provides an alkaline polishing liquid for barrier layer polishing, the alkaline polishing liquid comprises abrasive particles, an azole compound, a complex, a C1-C4 quaternary ammonium alkali, an oxidant, polyvinyl alcohol and water, and the alkaline polishing liquid can effectively suppress excessive erosion of edges (EOE), and at the same time also can effectively control the erosion of thin line areas of a copper wire, and realizes the global planarization.
Description
technical field [0001] The invention relates to an alkaline chemical mechanical polishing fluid, more specifically, to an alkaline chemical mechanical polishing fluid for barrier layer polishing. Background technique [0002] Chemical Mechanical Polishing (CMP) is the most effective way to planarize the chip surface. [0003] The barrier layer is usually between the silicon dioxide and the copper wire and acts to block the diffusion of copper ions into the dielectric layer. When polishing, first the copper above the barrier layer is removed. Due to the high polishing speed of copper at this time, various defects (such as: butterfly defect dishing, and erosion erosion) will be formed. When polishing copper, copper CMP is usually required to stop on the barrier layer first, and then another special barrier layer polishing solution is used to remove the barrier layer (such as tantalum). At the same time, the butterfly defect dishing and erosion erosion are corrected to achiev...
Claims
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IPC IPC(8): C09G1/02H01L21/321
Inventor 王晨何华锋
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD