Alkaline chemical mechanical polishing liquid

Abstract

The invention provides an alkaline polishing liquid for barrier layer polishing, the alkaline polishing liquid comprises abrasive particles, an azole compound, a complex, a C1-C4 quaternary ammonium alkali, an oxidant, polyvinyl alcohol and water, and the alkaline polishing liquid can effectively suppress excessive erosion of edges (EOE), and at the same time also can effectively control the erosion of thin line areas of a copper wire, and realizes the global planarization.

Description

technical field [0001] The invention relates to an alkaline chemical mechanical polishing fluid, more specifically, to an alkaline chemical mechanical polishing fluid for barrier layer polishing. Background technique [0002] Chemical Mechanical Polishing (CMP) is the most effective way to planarize the chip surface. [0003] The barrier layer is usually between the silicon dioxide and the copper wire and acts to block the diffusion of copper ions into the dielectric layer. When polishing, first the copper above the barrier layer is removed. Due to the high polishing speed of copper at this time, various defects (such as: butterfly defect dishing, and erosion erosion) will be formed. When polishing copper, copper CMP is usually required to stop on the barrier layer first, and then another special barrier layer polishing solution is used to remove the barrier layer (such as tantalum). At the same time, the butterfly defect dishing and erosion erosion are corrected to achiev...

AI Technical Summary

Problems solved by technology

But this kind of fine polishing liquid is not suitable for metal materials, nor can it solve the problem of excessive edge erosion (EOE)

Images