A kind of alkaline chemical mechanical polishing fluid

Abstract

The invention provides an alkaline polishing solution for barrier layer polishing, which contains abrasive particles, azole compounds, C 1 ~C 4 Quaternary ammonium base, oxidizing agent, water and surfactant to adjust the flatness of silicon wafer surface. The polishing liquid can effectively control the erosion (erosion) of the fine line region of the copper wire, and quickly realize global planarization.

Description

technical field [0001] The present invention relates to an alkaline chemical mechanical polishing fluid, more particularly, to an alkaline chemical mechanical polishing fluid for barrier layers. Background technique [0002] Chemical Mechanical Polishing (CMP) is the most effective way to planarize the chip surface. [0003] The barrier layer is usually between the silicon dioxide and the copper wire and acts to block the diffusion of copper ions into the dielectric layer. When polishing, first the copper above the barrier layer is removed. Due to the high polishing speed of copper at this time, various defects (such as: butterfly defect dishing, and erosion erosion) will be formed. When polishing copper, copper CMP is usually required to stop on the barrier layer first, and then another special barrier layer polishing solution is used to remove the barrier layer (such as tantalum). At the same time, the butterfly defect dishing and erosion erosion are corrected to achieve...

AI Technical Summary

Problems solved by technology

But this kind of fine polishing liquid cannot be used for polishing containing metal materials (copper, tantalum)

[0012] In the above prior art, there is no polishing fluid that can well protect and adjust the fine line area while adjusting the polishing speed of various materials such as silicon dioxide, low-K materials, barrier layers, and copper. Erosion, while silicon wafers have high global flatness

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