Preparation method for tin oxide nanowire gas sensor

A gas sensor, tin oxide technology, applied in instruments, scientific instruments, measuring devices, etc., can solve problems such as poor sensitivity and stability, and achieve good gas sensing characteristics

Inactive Publication Date: 2014-05-07
XIAN JIAOTONG UNIV JINGSHENG SCI & TECH DEV
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

[0003] The sensitivity and stability of materials used in traditional gas sensors are relatively poor. Nanomaterials have become the mainstream, especially gas sensors with metal oxide nanostructures, which have low power consumption, simple preparation, and can perfectly match semiconductor materials. However, the current metal oxide nanowire gas sensors are still prepared in a non-self-assembled manner, and the gas-sensing properties of the prepared sensors need to be improved.

Method used

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Embodiment Construction

[0014] Below in conjunction with embodiment the present invention is described in more detail.

[0015] The present invention is step 1, preparing comb-shaped intersecting electrodes

[0016] Step 1.1, use a vacuum furnace to deposit a silicon oxide insulating layer on a single crystal silicon substrate with an area of ​​3cm×3cm-5cm×5cm in a pure oxygen environment, and then use a photolithography machine to coat a layer on the insulating layer Photoresist;

[0017] Step 1.2, exposing the comb-shaped intersecting electrode template and the photoresist through contact exposure so that the photoresist corresponding to the comb-shaped intersecting electrode position is peeled off;

[0018] Step 1.3, sputter a layer of 200-300nm chromium film on the surface of the silicon oxide insulating layer, sputter a layer of 80-100nm gold film on the chromium film, and then place the entire substrate in alcohol to make the unexposed The photoresist is peeled off to form chrome-gold interdi...

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PUM

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Abstract

A preparation method for a tin oxide nanowire gas sensor is disclosed. The preparation method comprises: deposing a silicon oxide insulating layer on a monocrystalline silicon substrate, and coating the insulating layer with a layer of a photoresist; peeling off corresponding photoresist by performing contact exposure on an interdigital cross electrode mold plate and the photoresist; sputtering a layer of chromium membrane on the surface of the silicon oxide insulating layer, then sputtering a layer of gold membrane on the chromium membrane, then putting the whole substrate in alcohol to peel off unexposed photoresist and form a chromium-gold interdigital cross electrode; and putting active carbon and tin stannic oxide powder in a small quartz tube, then putting the substrate with the chromium-gold interdigital cross electrode at a position being 1 cm distant from the mixed powder, putting the small quartz tube in a large quartz tube, placing in a vacuum furnace, performing vacuum pumping, then introducing nitrogen, heating, and cooling, wherein an offwhite flocculent substance attaching to the substrate with the chromium-gold interdigital cross electrode is stannic oxide nanowire, and the stannic oxide nanowire attaches to the substrate with the chromium-gold interdigital cross electrode for forming the stannic oxide nanowire gas sensor.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a preparation method of a tin oxide nanowire gas sensor. Background technique [0002] A gas sensor is a converter that converts a certain gas volume fraction into a corresponding electrical signal. The probe head conditions the gas sample through the gas sensor, usually including filtering out impurities and interfering gases, drying or cooling the display part of the instrument. [0003] The sensitivity and stability of materials used in traditional gas sensors are relatively poor. Nanomaterials have become the mainstream, especially gas sensors with metal oxide nanostructures, which have low power consumption, simple preparation, and can perfectly match semiconductor materials. However, the current metal oxide nanowire gas sensors are still prepared in a non-self-assembled manner, and the gas-sensing properties of the prepared sensors need to be improved. Contents of th...

Claims

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Application Information

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IPC IPC(8): G01N27/00
Inventor 田边
Owner XIAN JIAOTONG UNIV JINGSHENG SCI & TECH DEV
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