Preparation method for tin oxide nanowire gas sensor
A gas sensor, tin oxide technology, applied in instruments, scientific instruments, measuring devices, etc., can solve problems such as poor sensitivity and stability, and achieve good gas sensing characteristics
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[0014] Below in conjunction with embodiment the present invention is described in more detail.
[0015] The present invention is step 1, preparing comb-shaped intersecting electrodes
[0016] Step 1.1, use a vacuum furnace to deposit a silicon oxide insulating layer on a single crystal silicon substrate with an area of 3cm×3cm-5cm×5cm in a pure oxygen environment, and then use a photolithography machine to coat a layer on the insulating layer Photoresist;
[0017] Step 1.2, exposing the comb-shaped intersecting electrode template and the photoresist through contact exposure so that the photoresist corresponding to the comb-shaped intersecting electrode position is peeled off;
[0018] Step 1.3, sputter a layer of 200-300nm chromium film on the surface of the silicon oxide insulating layer, sputter a layer of 80-100nm gold film on the chromium film, and then place the entire substrate in alcohol to make the unexposed The photoresist is peeled off to form chrome-gold interdi...
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