Gallium nitride led manufacturing method, gallium nitride led and chip

Abstract

The embodiment of the invention provides a gallium nitride LED manufacturing method, a gallium nitride LED and a chip. The gallium nitride LED manufacturing method comprises the step that a gallium nitride nucleate layer, an undoped gallium nitride layer, an N-doped gallium nitride layer, a quantum well transition layer, a multi-quantum-well layer, a P-doped gallium nitride layer and a contact layer are sequentially grown on a substrate on which the thermal treatment is carried out through a reaction chamber, wherein within the time period from beginning of growing of the N-doped gallium nitride layer to the ending of growing of the multi-quantum-well layer, at least one thermal annealing is carried out. The extensional internal stress can be reduced to the greater extent, the blue shift of the LED is reduced, the anti-static electricity performance of materials is improved, and the lighting efficiency of quantum wells is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor light-emitting diodes (Light-Emitting Diode, LED), and in particular to a method for preparing a gallium nitride LED, a gallium nitride LED and a chip. Background technique [0002] The wide bandgap material represented by gallium nitride is the third-generation semiconductor material after silicon Si and gallium arsenide GaAs, which can be widely used in the production of LEDs and chips containing the LEDs. Since it is difficult to obtain high-quality commercial bulk gallium nitride crystals at present, generally gallium nitride LEDs use heterogeneous substrate epitaxy to obtain gallium nitride thin films. [0003] However, there is a large lattice mismatch between gallium nitride and substrates such as sapphire substrates or Si substrates, which will cause dislocations in the epitaxial layer, and the dislocations in the epitaxial layer will expand and pass through the entire ep...

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Problems solved by technology

[0003] However, there is a large lattice mismatch between gallium nitride and substrates such as sapphire substrates or Si substrates, which will cause dislocations in the epitaxial layer, and the dislocations in the epitaxial layer will expand and pass through the entire epitaxial layer , and the internal stress of semiconductor devices such as gallium nitride LEDs is too large, resulting in energy band bending, and the recombination efficiency of electrons and holes in the active region is greatly reduced, which in turn leads to low antistatic properties of materials and low luminous efficiency of quantum wells.

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