A multi-source regulated resistive memory with a multi-layer film structure and its preparation method

Abstract

The invention discloses a multi-field controllable resistive random access memory with a multi-layer film structure and a preparation method thereof. The resistive random access memory is composed of a piezoelectric substrate, a conductive lower electrode, a ferroelectric thin film layer, an upper electrode thin film layer and a gate electrode, wherein the piezoelectric substrate is made from a PMN-PT (Plumbum Magnesium Niobate ) single crystal material; the conductive lower electrode is a manganite thin film; the ferroelectric thin film layer is a BaTiO3 or BiFeO3 ferroelectric thin film; the upper electrode layer and the gate electrode are Pt, Au or Al conductive thin films. The preparation method of the memory comprises the steps of depositing the conductive lower electrode thin film layer on the piezoelectric substrate, next, depositing the single ferroelectric thin film layer or a heterojunction, and finally, depositing the upper electrode thin film and the gate electrode. The memory of the structure has excellent electro-resistive effect, and the electro-resistance can be regulated dynamically by virtue of a field effect structure established with the piezoelectric substrate, and therefore, multi-field regulation and control of the resistive state of a memory device are realized and the design flexibility of the memory can be improved; the multi-field controllable resistive random access memory with the multi-layer film structure is significant for increasing the manufacturing quantity of data memory devices in China.

Description

[0001] This application is supported by the Natural Science Foundation of Tianjin (Project No.: 11JCZDJC21800, 11JCYBJC02700), the National Natural Science Foundation of China (Project No. 11004148, 11104202) and the Startup Fund for Scientific Research of Returned Overseas Students of the Ministry of Education. technical field [0002] The invention belongs to the technical field of information storage devices, and relates to the development and research of important components of new non-volatile information storage devices, more specifically, a multi-field and multi-source regulated resistive variable memory and a preparation method thereof. Background technique [0003] In the 2007 International Semiconductor Device Development Roadmap (ITRSD), a new chapter was opened, named "New Storage Devices and Materials", which emphasized that it is important to design and develop a new generation of storage devices based on new information storage mechanisms. meaning. The mainstr...

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Problems solved by technology

However, there has been a lack of direct experimental evidence on the influence of the accumulation and depletion of charges in the semiconductor electrode layer on the storage performance of the MFS structure, and there are huge gaps in the conclusions of different international research groups on the function of the semiconductor layer in the MFS structure. differences

Therefore, it is a huge challenge to properly describe the role of semiconductor thin films. The difficulty is that it is difficult to adjust the coefficient of resistive switching in situ by changing the amount of carriers in the semiconductor layer.

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