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Image sensor pixel structure for preventing image diffusion and manufacture method thereof

An image sensor and pixel structure technology, applied in the field of semiconductors, can solve the problems of increasing the number of saturated pixels, the inability to reflect pixel signals, and the inability to correctly collect object information, etc., to achieve the effect of eliminating pixel color distortion and preventing image dispersion

Active Publication Date: 2014-05-21
BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will make the crosstalked pixel signal unable to reflect the real light, cause the number of saturated pixels to increase than the actual one, and cause image color distortion and image dispersion phenomenon
Therefore, the image sensor with image dispersion phenomenon cannot correctly collect the object information near the strong light object, thereby reducing the quality of the image

Method used

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  • Image sensor pixel structure for preventing image diffusion and manufacture method thereof
  • Image sensor pixel structure for preventing image diffusion and manufacture method thereof
  • Image sensor pixel structure for preventing image diffusion and manufacture method thereof

Examples

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Embodiment 1

[0042] An embodiment of the present invention provides an image sensor pixel structure for preventing image dispersion, at least including a photodiode placed in a semiconductor substrate, a shallow trench isolation region arranged on one side of the photodiode, and a shallow trench isolation region arranged on the other side of the photodiode The two shallow trench isolation regions and the transistor drain active region disposed between the two shallow trench isolation regions and connected to the power supply, wherein a shallow trench isolation region on one side of the photodiode is provided with a deep P N-type well region; the transistor drain active region is sequentially provided with an N-type well region and a deep P-type well region, so that there is an overflow charge conduction channel between the transistor drain active region and the adjacent photodiodes on both sides .

[0043] Further, the depth of the N-type well region is 0.5um˜1.5um.

[0044] Further, the de...

Embodiment 2

[0054] An embodiment of the present invention provides a method for manufacturing a pixel structure of an image sensor that prevents image dispersion. The specific process steps include Figure 4 ~ Figure 10 Steps shown:

[0055] 1) if Figure 4 As shown, after the STI (Shallow Trench Isolation) process in the traditional CMOS process, an oxide layer 401 is grown on the surface of the semiconductor substrate as a process protection layer with a thickness of 10nm-12nm. This embodiment uses a P-type silicon substrate .

[0056] 2) if Figure 5 As shown, the photoresist is spin-coated and developed to open the predetermined P-type well injection region; the thickness of the photoresist is not less than 2.7um. The opening in the predetermined P-type well injection region includes: an opening facing a shallow trench isolation region on one side of the photodiode, and another opening facing the transistor between the two shallow trench isolation regions on the other side of the ...

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Abstract

The invention discloses an image sensor pixel structure for preventing image diffusion and a manufacture method thereof. The image sensor pixel structure at least comprises a photodiode placed in a semiconductor base body, a shallow slot isolation region arranged on one side of the photodiode, two shallow slot isolation regions arranged on the other side of the photodiode, and a transistor drain terminal active region arranged between the two shallow slot isolation regions on the other side of the photodiode and connected with a power source, wherein a deep P-shaped well region is arranged on the shallow slot isolation region arranged the one side of the photodiode, and an N-shaped well region and a deep P-shaped well region are sequentially arranged on the transistor drain terminal active region and enable an overflow electric charge current guidance channel to exist among the transistor drain terminal active region and two portions of the photodiode, which are respectively adjacent to two sides of the transistor drain terminal active region. The image sensor pixel structure for preventing the image diffusion and the manufacture method thereof can prevent collected images from diffusing, and simultaneously eliminate the problem that colors of peripheral pixels of strong light images are distorted.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to an image sensor pixel structure for preventing image dispersion and a manufacturing method thereof. Background technique [0002] Image sensors have been widely used in digital cameras, mobile phones, medical devices, automobiles and other applications. In particular, the rapid development of CMOS (Complementary Metal Oxide Semiconductor) image sensor technology has made people have higher requirements for the output image quality of image sensors. [0003] In the image sensor chip in the prior art, the bright spots or bright line areas in the collected images are larger than the actual object image size. For example, when the photos taken contain bright objects such as the sun, car headlights, incandescent lamps, or strong reflections, these objects will be larger than the actual size, and the bright areas such as the sun and lights will become much larger than the actua...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 郭同辉陈杰刘志碧唐冕旷章曲
Owner BEIJING SUPERPIX MICRO TECHNOLOGY CO LTD
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