Semiconductor device with metal-filled recess in polysilicon gate electrode
A metal-filled, polysilicon gate technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to solve problems such as limiting processing types, reducing the maximum allowable temperature, affecting process steps, etc.
Active Publication Date: 2017-07-28
INFINEON TECH AUSTRIA AG
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Problems solved by technology
However, the use of metals for device gate electrodes and field plates strongly affects the subsequent process steps required to complete chip fabrication because the maximum allowable temperature of chips with metal gates is reduced, which in turn limits The type of processing performed
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[0025] figure 1 A top plan view of an embodiment of a power semiconductor device, such as a power MOSFET, fabricated on a semiconductor substrate 100 is shown. As used herein, the term substrate refers to a single crystal or compound semiconductor wafer, such as a Si, SiC, GaAs or GaN wafer, or to one or more epitaxial layers grown on a single crystal or compound semiconductor wafer. In the case of using an epitaxial layer, the epitaxial layer is grown on the growth / support substrate and has a lower doping but the same conductivity as the growth / support substrate. The underlying growth / support wafer can be thinned or removed entirely. A semiconductor device also includes various device regions such as a body region, a source region, a drift region, and a drain region, which in figure 1 Not visible in the top plan view of . A dielectric layer 102 such as BPSG (borophosphosilicate glass) or PSG (phosphosilicate glass) is formed on the substrate 100 and insulates the gate and ...
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Semiconductor device with metal-filled recesses in the polysilicon gate electrode. A semiconductor device including a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type opposite to the first conductivity type adjacent to the body region, and a source region extending adjacent to the source region and Trench in the substrate in the body region. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization layer on the dielectric layer and covering a portion of the substrate, and a source metallization layer on the dielectric layer and electrically connected to the source region. The source metallization layer is spaced apart from the gate metallization layer and covers a different portion of the substrate than the gate metallization layer. A metal-filled trench in the polysilicon gate electrode is electrically connected to the gate metallization layer and extends along the length of the trench beneath at least a portion of the source metallization layer.
Description
technical field [0001] The present application relates to semiconductor devices, particularly semiconductor devices having polysilicon gate electrodes with low gate resistance. Background technique [0002] Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) with trench field plates have been used as fast switching power devices. Trench field plates provide charge compensation, allowing much lower Rds(on)×A and lower gate-related FOM (figure of merit). The performance of these devices is limited by the non-uniform switching effect of the devices. [0003] These effects include uneven switching caused by distributed gate resistance. For example, parts of the chip adjacent to the gate pad follow rapid changes in gate voltage much faster than parts of the chip further away from the gate pad. Also, unlike standard MOSFETs, the charging / discharging of the trench field plate that provides charge to compensate for the drift region doping is non-uniform. In the ca...
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IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/66734H01L29/78H01L29/7802H01L29/7813H01L29/4236H01L29/407H01L29/41741H01L29/7811H01L29/4925H01L21/28035H01L21/32133H01L29/0696H01L29/1095H01L29/404H01L29/42372H01L29/4916
Inventor O·布兰克R·西米尼克L·J·叶
Owner INFINEON TECH AUSTRIA AG