Ion beam etching depth monitoring method

Abstract

The invention provides an ion beam etching depth monitoring method. The ion beam etching depth monitoring method is characterized in that the ion beam etching depth monitoring method comprises the following steps that: step one, a layer of a standard material is plated on an electrode surface of a quartz crystal and is adopted as a plated film layer, such that a plated film quartz crystal can be obtained; step two, the plated film quartz crystal and a material to be etched are put in an ion beam etching machine, the plated film quartz crystal is connected with a frequency detection device; step three, the material to be etched and the plated film layer are etched simultaneously, and the frequency detection device monitors the etching depth of the plated film layer in real time, and when the frequency detection device monitors that the etching depth of the plated film layer achieves predetermined depth, etching is stopped, and an etched material that satisfies target etching depth can be obtained. The ion beam etching depth monitoring method provided by the invention is advantageous in simple devices, operational easiness, high precision and low cost.

Description

technical field [0001] The invention belongs to the technical field of micromachining, and in particular relates to a monitoring method for monitoring ion beam etching depth changes by using a quartz crystal oscillator method. Background technique [0002] Ion beam etching is a widely used microfabrication technology. It achieves the purpose of material removal and shaping through the physical sputtering of ion beams on materials. It has the advantages of high resolution and good orientation. [0003] Etching depth is an important indicator in ion beam etching technology, therefore, monitoring the etching depth is an important technical link in the etching process. [0004] At present, the time control method or the optical path measurement interference light intensity method are mostly used to monitor the etching depth during the etching process. The time control method is to divide the etching depth by the etching rate of the material to be etched measured in advance to o...

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Problems solved by technology

The time control method is to divide the etching depth by the etching rate of the material to be etched measured in advance to obtain the etching time of the material under the same process conditions. Since the etching rate is related to many factors, in It is difficult to maintain a constant value during the etching process, and the error is large

When using the optical path monitoring method to monitor the etching dep

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