Method for characterizing responsivity of quantum dot infrared detector

Abstract

The invention relates to performance evaluation and determination methods of photoelectric detectors and provides a method for characterizing the responsivity of a quantum dot infrared detector aiming at the detects of a method for characterizing the responsivity of a vertical-structure quantum dot infrared detector in the prior art. According to the method, a light current model is derived and light current intensity is determined based on the relationships between light currents and quantum efficiency as well as photoconduction gains in a photoconduction detection mechanism of the quantum dot infrared detector, and then a responsivity model is established and responsivity characterization is realized through the relationship between the responsivity and the light currents in the quantum dot infrared detector. The detector characteristic quantitative method better conforms to the detection mechanism of the detector. Experiment results show that compared with traditional frequently-used quantitative methods, the detector characteristic quantitative method has the advantages that prediction about light currents and responsivity of the detector is more consistent with actual experimental measurement values, and then prediction about the detection performance of the detector is made more accurate.

Description

technical field [0001] The invention relates to a method for evaluating and measuring the performance of a photoelectric detector, in particular to a method for characterizing the responsivity of a quantum dot infrared detector. Background technique [0002] Quantum dot infrared detectors are new low-dimensional detectors that have emerged in recent years. Due to their superior characteristics such as low dark current, high gain, and high detectivity, they have attracted widespread attention. This new type of photoconductive detector adopts the quantum dot nanostructure, which significantly changes the factors affecting the responsivity characteristics. However, the previous characterization methods of photoconductive detector responsivity characteristics did not fully consider the influence of these factors, so it is very necessary In the study of the characterization of the responsivity of quantum dot infrared detectors, the characteristics of the detector’s own structure ...

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Problems solved by technology

Such as H.Liu, “Quantum dot infrared photodetector”, Opto-electronics Review, 1, 1-5 (2003); Ryzhii V.. “Physical model and analysis of quantum dot infrared photodetectors with blocking layer”, Journal of Applied physics, 2001, 89: 5117-5224; P. Martyniuk , A. Rogalski, “Insight into performance of quantum dot infrared photodetectors,” Bulletin the polish academy of sciences Technical sciences, 57, 103-116 (2009); Mahmoud Imbaby I., Konber Hussien A., El_Tokhy Mohamed S.. “Performance improvement of quantum dot infrared photodetectors through modeling,” Optics and Laser technology, 42: 1240-1249(2010). However, these methods did not fully consider The particularity of electron transmission follows some characteristics of the quantum well infrared detector structure, so the established responsivity characterization method cannot reasonably reflect the response characteristics of the detector, and it is difficult to accurately predict and evaluate the detector's responsivity performance

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