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Method for measuring corrosion rate of film at static state

A corrosion rate and measurement method technology, applied in the direction of measuring devices, weather resistance/light resistance/corrosion resistance, instruments, etc., can solve the problem of insufficient accuracy in measuring film thickness, and achieve the effect of fast static corrosion rate

Inactive Publication Date: 2014-06-11
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology

[0004] CN102005401A provides a method for measuring the thickness of an epitaxial film. It is necessary to form a reference film, and use a scanning electron microscope to measure the thickness of the reference film and the thickness difference between the epitaxial film and the reference film to calculate the thickness of the epitaxial film. degree is not enough

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  • Method for measuring corrosion rate of film at static state
  • Method for measuring corrosion rate of film at static state
  • Method for measuring corrosion rate of film at static state

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Embodiment Construction

[0021] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0022] In the present invention, a PSIA SPM XE-300P profiler is used to measure the height difference of the film, so as to obtain the static corrosion rate of the film. Specifically, the present invention adopts the following means: the wafer 101 is soaked in the polishing solution 102 (as attached image 3 ), after a period of time, the film soaked in the polishing liquid 102 is corroded, and there is a height difference with the metal film above the liquid surface (as attached Figure 4 ). The static corrosion rate of the polishing solution to the film can be calculated by measuring the height difference with a profiler. in the attached Figure 5 Among them, the present invention provides a static corrosion rate result obtained after immersing the cobalt wafer in polishing ...

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Abstract

The invention provides a method for measuring corrosion rate of a film at a static state. The method comprises the following steps: forming the film on a substrate of a wafer, immersing a part of the wafer in chemically and mechanical polishing liquid, measuring the height difference at an interface position by a contourgraph after immersing for a while, and then acquiring the corrosion rate of the film at the static state.

Description

technical field [0001] The invention relates to a method for measuring the static corrosion rate of a thin film. Background technique [0002] In semiconductor devices, metals such as aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, cobalt, rubidium, etc. are usually used as wires or barrier layers. Chemical mechanical polishing is one of the most Effective planarization methods are often used to remove excess metal and barrier layers and achieve planarization. In the chemical mechanical polishing of metals, it is necessary to have a high metal removal rate and to control the defects of the polished metal wires such as corrosion well. Therefore, it is very important to control the corrosion rate of metal chemical mechanical polishing fluid to metal. The non-metallic materials used in devices such as silicon dioxide, single crystal silicon, polysilicon, silicon oxynitride, low-k dielectric materials such as carbon-doped silicon dioxide, et...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N17/00
Inventor 蔡鑫元荆建芬张建王雨春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD