Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGBT structure and preparation method thereof

A technology of silicon nitride film and main chip, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve problems such as unqualified device reliability, device failure, and increased leakage current. Achieve the effects of stable and reliable working performance, simple and easy preparation method and high reliability

Active Publication Date: 2014-06-25
BYD SEMICON CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

IGBT devices using this type of sheath generally cannot achieve high reliability performance
Specifically, the traditional protective layer composed of phosphosilicate glass, silicon oxide, and silicon nitride often cannot guarantee the stability of device parameters when working in high-temperature, high-pressure, high-humidity, and long-term environments. increases, the device fails
lead to unqualified device reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT structure and preparation method thereof
  • IGBT structure and preparation method thereof
  • IGBT structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0023] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention brings forward an IGBT structure and a preparation method thereof. The IGBT structure comprises a main chip and a protection layer. The protection layer further comprises a silicon nitride film formed on the main chip and a polyimide film formed on the silicon nitride film. The IGBT structure is provided with the silicon nitride and polyimide film composite protection layer, and the composite layer employs a secondary photoetching process so that good film quality of each film is ensured, quite good mechanical property, corrosion resistance property, moisture resistance property and external ion resistance property are provided, and manufactured devices are stable and reliable.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and specifically relates to an IGBT structure and a preparation method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) device applications, especially in power modules and power modules, often need to work in high temperature, high pressure, high humidity, and long-term environments, so IGBT devices are required to operate in the above-mentioned environment It is necessary to ensure that the device works stably and reliably. [0003] Existing IGBT devices usually use a protective layer composed of phosphosilicate glass, silicon oxide, and silicon nitride. IGBT devices using this type of sheath generally cannot achieve high reliability performance. Specifically, the traditional protective layer composed of phosphosilicate glass, silicon oxide, and silicon nitride often cannot guarantee the stability of device parameters when working in high-temperature, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/29H01L21/56
CPCH01L2924/0002H01L2924/00
Inventor 郑忠庆
Owner BYD SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com