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A np-type cmos avalanche photodiode with deep n-well

An avalanche photoelectric, NP-type technology, applied in the field of photoelectric detection, can solve the problems of slow diffusion speed, NP-type APD device speed, low response frequency and bandwidth, etc., to achieve fast diffusion speed, improve device speed, and high doping concentration. Effect

Active Publication Date: 2016-08-17
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the slow diffusion motion, the rate, response frequency and bandwidth of NP-type APD devices are very low.

Method used

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  • A np-type cmos avalanche photodiode with deep n-well
  • A np-type cmos avalanche photodiode with deep n-well
  • A np-type cmos avalanche photodiode with deep n-well

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Embodiment Construction

[0019] A non-limiting embodiment is given below in conjunction with the drawings to further illustrate the present invention.

[0020] have to be aware of is, Figure one with Figure three It only shows a schematic simplified diagram of the CMOS APD, so these two diagrams are not drawn to scale.

[0021] Such as Figure one Shown is the structure diagram of a conventional NP-type CMOS APD optoelectronic device. A conventional NP-type CMOS APD includes a substrate 11 (typically made of Si material), an avalanche region 12 (typically made of PN structure, P-type semiconductor is made of boron-doped Si material, and N-type semiconductor is made of phosphorus Doped Si material), P-type contact 13 (typically, composed of heavily P-doped Si material), N-type contact 14 (typically, composed of heavily N-doped Si material), STI15 (also known as Shallow trench isolation, typically made of SIO2 material), electrode 16 (typically made of Al material). It should be noted that the above-ment...

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Abstract

The invention discloses an NP-type CMOS avalanche photodiode with a deep N-trap. The NP-type CMOS avalanche photodiode comprises a P-type substrate, an N-trap layer and an avalanche area. The N-trap layer and the avalanche area are arranged on the P-type substrate, the avalanche area is arranged between the P-type substrate and the N-trap layer to form a PN junction, a light absorbing layer is further arranged between the P-type substrate and the avalanche area, the light absorbing layer is the deep N-trap arranged on the P-type substrate, and the dosage concentration of the deep N-trap is larger than that of the P-type substrate. By means of the NP-type CMOS avalanche photodiode, the rate, the frequency response and bandwidth of avalanche photodiode devices are improved.

Description

Technical field [0001] The invention relates to the technical field of photoelectric detection, to the structure of a photoelectric device, and in particular to a deep N-well NP-type CMOS avalanche photodiode. Background technique [0002] Avalanche photodiode, also known as APD (avalanche photodiode), its working principle is that photogenerated carriers (hole-electron pairs) generated by the photoelectric effect are rapidly accelerated when moving in the high electric field region (the reverse voltage on the PN junction) During the movement, one or more collisions may occur, and secondary and tertiary hole-electron pairs are generated through the impact ionization effect, resulting in an avalanche multiplier effect, which causes the number of carriers to increase rapidly, thereby forming a relatively large optical signal current. In low-intensity, high-sensitivity and high-speed applications, APD devices are very attractive. For example, long-distance optical communications and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0352
CPCH01L31/035272H01L31/107
Inventor 王巍王川颜琳淑胡洁王婷杜超雨王振袁军
Owner CHONGQING UNIV OF POSTS & TELECOMM