A kind of sb‑te‑w phase change target material for phase change storage and its preparation method

A phase change storage and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as difficult and complicated operation, achieve uniform composition, improve grain size, and reduce sintering temperature Effect

Active Publication Date: 2017-03-15
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using multiple targets for co-sputtering, the actual operation needs to precisely control the ignition time, gas flow and power of each target to change the composition of the deposited layer, which is difficult and complicated to operate

Method used

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  • A kind of sb‑te‑w phase change target material for phase change storage and its preparation method
  • A kind of sb‑te‑w phase change target material for phase change storage and its preparation method
  • A kind of sb‑te‑w phase change target material for phase change storage and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this embodiment, the phase change target is Sb 0.398 Te 0.597 W 0.005 (Mass fraction of tungsten is about 0.7%). The specific preparation conditions are as follows: W powder (-300 mesh) with a mass fraction of 0.5%~1.5% is mixed with Sb powder (-200 mesh) and Te powder (-200 mesh) respectively, then pressed and molded, and packed into a bag Vacuum sealing, smelting, crushing and ball milling to obtain intermediate compound powder of WSb and WTe. Melting parameters: heating rate 15~20°C / min, melting temperatures of WSb and WTe respectively 650°C and 550°C, melting time 15min. Crushed and ball milled for 24 hours and 30 hours respectively, the intermediate compounds of WSb and WTe were obtained, with median diameters of about 8.378 μm and 8.182 μm. Table 1(a) and Table 1(b) are the laser particle size distributions of WSb and WTe intermediate compound powders in Example 1, Table 1(a): WSb, Table 1(b): WTe. Figure 1(a) and Figure 1(b) are the laser particle size di...

Embodiment 2

[0034] In this embodiment, the phase change target is Sb 0.654 Te 0.327 W 0.019 (The mass fraction of tungsten is about 3%). The specific preparation conditions are as follows: W powder with a mass fraction of 1%~2.5% is mixed with Sb powder and Te powder respectively, then pressed into shape, put into a bag, vacuum sealed, smelted, crushed, and ball milled to obtain the intermediate compound of WSb and WTe powder. Melting parameters: heating rate 15~20°C / min, melting temperatures of WSb and WTe respectively 660°C and 595°C, melting time 20min. Crushed and ball milled for 30h and 36h respectively, the intermediate compounds of WSb and WTe were obtained, with median diameters of about 11.352μm and 13.861μm.

[0035] According to the general formula Sb 0.654 Te 0.327 W 0.019 Proportion, mix the two intermediate compound powders evenly, after mixing for 48 hours, double-way press vacuum hot pressing sintering, pressure 15MPa, vacuum degree 1.0×10 -3 Pa, sintering temperat...

Embodiment 3

[0038] In this embodiment, the phase change target is Sb 0.756 Te 0.189 W 0.055 (Mass fraction of tungsten is about 8%). The specific preparation conditions are as follows: W powder (-300 mesh) with a mass fraction of 2%~4% is mixed with Sb powder (-200 mesh) and Te powder (-200 mesh) evenly, then pressed into shape, put into a bag and vacuumize Sealing, smelting, crushing and ball milling to obtain WSb and WTe intermediate compound powder. Melting parameters: heating rate 10~15°C / min, melting temperatures of WSb and WTe respectively 665°C and 603°C, melting time 20min. Crushed and ball milled for 36 hours respectively, the intermediate compounds of WSb and WTe were obtained, and the median particle size diameters were about 13.42 μm and 12.169 μm.

[0039] According to the general formula Sb 0.756 Te 0.189 W 0.055 Proportion, mix the two intermediate compound powders evenly, after mixing for 48 hours, double-way press vacuum hot pressing sintering, the pressure is 12MPa,...

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Abstract

The invention relates to a Sb-Te-W phase-change target material for phase-change storage and a preparation method thereof. The Sb-Te-W phase-change target material has a general chemical formula of SbxTeyW1-x-y, and in the general chemical formula, x is >0 and <1, y is >0 and <1, the sum of x and y is <1, x / y is >=0.67 and <=4 and a mass fraction of W is <=10%. An intermediate compound is synthesized by a sheath seal vacuum melting synthesis technology and the Sb-Te-W phase-change target material is prepared by a bidirectional compaction vacuum hot-pressing sintering technology. The preparation method can effectively solve the problem that in alloy melting, material components are nonuniform because of difference of component melting points and densities, and can produce the Sb-Te-W phase-change target material having high density, high stability and high purity. Compared with the existing Ge2Sb2Te5 materials used widely, the Sb-Te-W phase-change target material has a high crystallization temperature and a low melting point and has good heat stability and good data retention when being used as a phase-change storage material.

Description

technical field [0001] The invention relates to a Sb-Te-W phase-change target material for phase-change memory and a preparation method thereof, which is a phase-change target material applicable to phase-change memory and a preparation method thereof. Background technique [0002] To outperform other non-volatile memories such as MRAM, FRAM, RRAM, etc. in terms of performance, phase change memory (PCRAM) must continuously reduce the RESET current, which requires the melting point T of the phase change memory material m Lower, crystallization temperature T x Higher, is a conflict for the material itself. Compared with traditional phase change materials, Sb-Te material has the advantages of fast crystallization speed and low melting point, but its crystallization temperature is very low (about 132 ° C), poor thermal stability, and poor data retention. In the case of undoped, Sb-Te series phase change materials cannot be applied to phase change memory. [0003] In the elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/14H01L45/00
Inventor 夏扬谢元锋吕宏王玉民姜珩李屹民
Owner GRIMAT ENG INST CO LTD
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