Schottky diode and manufacturing method thereof
A technology of Schottky diode and manufacturing method, which is applied in the field of microelectronics, can solve the problems of affecting the surface state of gallium nitride materials, reducing device performance, material defects, etc., and achieves small reverse leakage current, high voltage, and forward turn-on The effect of small voltage
Active Publication Date: 2014-07-02
GPOWER SEMICON
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Problems solved by technology
Ultra-high temperature will seriously affect the surface state of gallium nitride material, and even decompose gallium nitride, forming serious defects in the material and reducing device performance
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[0054] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
[0055] Furthermore, repeated reference numerals or designations may be used in different embodiments. These repetitions are only for the purpose of simply and clearly describing the present invention, and do not represent any relationship between the different embodiments and / or structures discussed.
[0056] In the present invention, the Schottky diode is an epitaxial multilayer structure, which includes: a substrate, a gallium nitride buffer layer, a heavily doped n-type gallium nitride layer, a lightly doped n-type gallium nitride layer, and a heavily doped gallium nitride layer. p-type gallium nit...
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The invention discloses a Schottky diode and a manufacturing method of the Schottky diode. The Schottky diode sequentially comprises a substrate, a gallium nitride buffer layer, an n-type heavy doping gallium nitride layer, an n-type light doping gallium nitride layer, a p-type heavy doping gallium nitride layer and an electrode structure. The p-type heavy doping gallium nitride layer is located on a part of the zone on the n-type light doping gallium nitride layer so that a specific pattern can be formed; parts of zones of the substrate and the gallium nitride buffer layer are perforated so that a part of the n-type heavy doping gallium nitride layer can be exposed; the electrode structure comprises a Schottky electrode located on the n-type light doping gallium nitride layer, a first ohmic electrode located on the p-type heavy doping gallium nitride layer and second ohmic electrodes located in holes and making contact with the n-type heavy doping gallium nitride layer. According to the method, a larger current can pass through the Schottky diode on the condition that a low-starting voltage is kept and reverse electric leakage is reduced; ultra-high temperature annealing is not needed in the technology so that damage to a gallium nitride material can be avoided.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to a gallium nitride Schottky diode and a manufacturing method thereof. Background technique [0002] In the field of high-power semiconductor devices, power devices based on the third-generation semiconductor material gallium nitride have undergone large-scale development in recent years and are gradually being widely used. GaN-based devices are gradually replacing silicon-based devices in some fields that require high device performance, such as radar and communication base stations. Compared with silicon materials, gallium nitride materials have the advantages of large band gap, high breakdown electric field strength, high electron saturation drift velocity, strong chemical stability and small thermal expansion coefficient. high pressure, high temperature resistance and high energy efficiency. [0003] Schottky diode is a low-power, ultra-high-speed semiconductor devic...
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Login to View More IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0619H01L29/66212H01L29/872
Inventor 宋晰
Owner GPOWER SEMICON