Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A kind of p-type diamond high and low potential barrier Schottky diode and its preparation method

A technology of Schottky diodes and diamonds, applied in the direction of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the contradictions of different heights, forward turn-on voltage and forward current density, and reverse leakage current and breakdown voltage and other problems, to achieve the effect of high current density, high breakdown voltage and small reverse leakage current

Active Publication Date: 2019-12-24
XI AN JIAOTONG UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a p-type diamond high and low barrier Schottky diode and its preparation method, which overcomes the gap between the forward turn-on voltage and the forward current density, the reverse leakage current and the breakdown voltage of the traditional Schottky diode. Contradictory problem; the present invention utilizes the Schottky contact barrier heights formed by the two surface terminals of the diamond to form high and low potential barrier Schottky diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of p-type diamond high and low potential barrier Schottky diode and its preparation method
  • A kind of p-type diamond high and low potential barrier Schottky diode and its preparation method
  • A kind of p-type diamond high and low potential barrier Schottky diode and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] refer to Figure 4-1 to Figure 4-8 , the present invention also provides a kind of preparation method of p-type diamond high and low potential barrier Schottky diode, comprises the following steps:

[0038] (1) carry out acid-base treatment to p-type diamond substrate 1, clean with acetone, alcohol, deionized water, blow dry with nitrogen, as Pic 4-1 shown;

[0039](2) Utilize the method for microwave plasma chemical vapor deposition to grow one deck diamond epitaxial layer 2 on the surface of p-type diamond substrate 1, as Figure 4-2 shown;

[0040] (3) On the diamond epitaxial layer 2, using metal as a mask, adopt dry etching method to etch strip-shaped channels to form a microstructure of periodic channels 4 and convex beams 3, such as Figure 4-3 shown;

[0041] (4) make ohmic contact electrode 5 at the back side of p-type diamond substrate 1, as Figure 4-4 shown;

[0042] (5) The microstructure obtained in step (3) with periodic channels 4 interspersed wit...

Embodiment 1

[0048] (1) Clean the diamond substrate 1 using a standard acid-base cleaning process to remove the non-diamond phase on the surface, then use acetone, alcohol, and deionized water to clean the diamond substrate 1, and dry the diamond lining with nitrogen Bottom 1.

[0049] (2) An epitaxial layer 2 with a thickness of 0.5-60 microns is grown on the diamond substrate 1 by microwave plasma chemical vapor deposition technology.

[0050] (3) Use photolithography technology and magnetron sputtering technology to expose the channel to be etched, and use metal as a mask to cover the place that does not need to be etched.

[0051] (4) Etching the diamond epitaxial layer obtained in step (3) by dry etching to obtain a microstructure in which convex beams 3 and channels 4 are alternated, wherein the channel depth is 0.2-10 microns.

[0052] (5) The ohmic contact electrode 5 is fabricated on the back surface of the diamond epitaxial layer obtained in step (4).

[0053] (6) Utilize photo...

Embodiment 2

[0059] (1) Clean the diamond substrate 1 using a standard acid-base cleaning process to remove the non-diamond phase on the surface, then use acetone, alcohol, and deionized water to clean the diamond substrate 1, and dry the diamond lining with nitrogen Bottom 1.

[0060] (2) An epitaxial layer 2 with a thickness of 0.5-60 microns is grown on the diamond substrate 1 by microwave plasma chemical vapor deposition technology.

[0061] (3) The ohmic contact electrode 5 is fabricated on the back surface of the diamond epitaxial layer obtained in step (2).

[0062] (4) Use photolithography technology and magnetron sputtering technology to expose the trenches that need to be etched, and use metal as a mask in places that do not need to be etched.

[0063] (5) Etching the diamond epitaxial layer in step (4) by dry etching technology to etch out the microstructure of convex beams 3 and channels 4 alternately, wherein the depth of the channels is 0.2-10 microns.

[0064] (6) Reactive...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
breakdown field strengthaaaaaaaaaa
breakdown voltageaaaaaaaaaa
Login to View More

Abstract

The invention discloses a p-type diamond high-low barrier Schottky diode and a preparation method thereof. The p-type diamond high-low barrier Schottky diode comprises a diamond substrate, and is characterized in that one surface of the diamond substrate is provided with a diamond epitaxial layer, and the other surface is provided with a ohmic contact electrode; the surface of the diamond epitaxial layer is provided with a microstructure in which convex beams and channels are alternatively distributed; the surface of the convex beams is provided with an oxygen terminal surface, the oxygen terminal surface is provided with low barrier Schottky region metal; the area except for the surface of the convex beams in the microstructure of the diamond epitaxial layer is provided with a fluorine terminal; and the low barrier Schottky region metal and the surface of the fluorine terminal are provided with a layer of high barrier Schottky region metal. Compared with the prior art, a Schottky diode with small forward turn-on voltage, high current density, small reverse leakage current and high breakdown voltage simultaneously can be acquired according to the invention.

Description

technical field [0001] The invention belongs to the technical field of diamond semiconductor power electronics, and relates to a p-type diamond high and low potential barrier Schottky diode and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the national economy, the demand for electric energy is increasing day by day. The generation, transportation and consumption of electric energy, as well as the effective conversion technology and control technology of electric energy in these processes, have become an indispensable key technology for both energy saving and sustainable social development. In the improvement of power energy control technology and utilization efficiency, power electronic devices and power converters including power electronic devices play a key role. As a part of power electronic devices, Schottky diodes are made of metal and semiconductor contacts to form Schottky barriers with rectification char...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0603H01L29/0684H01L29/66212H01L29/872
Inventor 王宏兴赵丹邵国庆刘璋成朱天飞张明辉王艳丰王玮问峰卜忍安侯洵
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com