A method for grinding and polishing large-scale sapphire substrates

A sapphire, large-scale technology, used in surface polishing machine tools, grinding/polishing equipment, grinding devices, etc., can solve problems such as thickness difference and flatness, and achieve the effect of solving the inconsistency of internal and external removal rates

Active Publication Date: 2016-05-11
TDG HLDG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a novel grinding and polishing process for sapphire substrates, which can effectively solve the problem of thickness difference and flatness in the thinning process of large-scale sapphire, and has good processing consistency, simple process, and effective Extend the service life of consumables and reduce costs, and realize mass production of large-size sapphire substrates

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Waxing patch: Use liquid wax to stick the sapphire substrate on a ceramic plate with a diameter of 576mm. When the wax is thrown off, the rotation speed is 2000rpm, and a total of 72 4-inch sapphire substrates are processed on 4 ceramic plates.

[0020] (2) Copper plate grinding: put 72 pieces of sapphire substrates on 4 ceramic plates into a copper plate grinder with a diameter of 1440 mm for processing, using a diamond grinding liquid with a particle size of 3 μm. 400g / cm 2 , the central pressure is 250g / cm 2 , the grinding temperature is 35°C. After processing, the thickness difference of a single sapphire substrate is 2 μm, and the thickness difference of all 72 4-inch sapphire substrates is 5 μm.

[0021] (3) Polishing: Use silicon dioxide polishing solution with a particle size of 80nm to process 72 sapphire substrates ground by a copper disc. The diameter of the grinding disc of the polishing machine is 1440mm, and a polishing cloth is attached to the grind...

Embodiment 2

[0023] (1) Waxing patch: Use liquid wax to stick the sapphire substrate on a ceramic plate with a diameter of 576mm. When the wax is thrown off, the rotation speed is 3000rpm, and a total of 28 6-inch sapphire substrates are processed on 4 ceramic plates.

[0024] (2) Copper disk grinding: put 28 pieces of sapphire substrates on 4 ceramic disks into a copper disk grinding machine with a diameter of 1440mm for processing, and use diamond grinding liquid with a particle size of 3μm. During the grinding process, the speed of the grinding disk is 45rpm, and the overall pressure 400g / cm 2 , the central pressure is 300g / cm 2 , the grinding temperature is 37°C. After processing, the thickness difference of a single sapphire substrate is 3 μm, and the thickness difference of all 28 6-inch sapphire substrates is 4 μm.

[0025] (3) Polishing: Use silicon dioxide polishing solution with a particle size of 80nm to process 72 sapphire substrates ground by a copper disc. The diameter of t...

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Abstract

The invention relates to a single-side grinding and polishing method for a large-sized sapphire substrate sheet, which comprises using liquid wax to paste the sapphire substrate sheet on a ceramic disc with a diameter of 576mm; using a copper disc grinder for grinding, and the copper disc grinder grinds the disc The diameter is 1440mm, and the material is calendered pure copper. The thickness difference of the sapphire substrate is controlled by adjusting the overall pressure and the central pressure; the polishing machine is used for polishing. The diameter of the grinding disc of the polishing machine is 1440 mm. Control the thickness difference of the sapphire substrate sheet with central pressure. The invention effectively solves the problem of inconsistency of internal and external removal rates when large-size sapphire substrates are processed on large equipment, and the thickness difference of the processed sapphire substrates is ≤3 μm, and the LTV (7mm×7mm) is <2 μm.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, in particular to a single-side grinding and polishing method for a large-size sapphire substrate. technical background [0002] Sapphire material is the material of choice for nitride semiconductor substrates and integrated circuit substrates. With the rapid development of the semiconductor lighting industry, the quality requirements for sapphire substrates are getting higher and higher, and the size requirements are increasing. The original 2-inch The sapphire substrate gradually develops to 4 inches, 6 inches, and even 8 inches. [0003] Usually, the thinning of the sapphire substrate mainly includes the steps of sticking the chip, copper disk grinding, polishing, wax removal, cleaning, etc. During the copper disk grinding process, due to the deformation of the disk surface, the removal speed of the inner and outer rings of the wafer is inconsistent, so only small grinding equipm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/04B24B29/02
CPCB24B29/02B24B37/04
Inventor 陈海丰段金柱潘振华王勤峰姚志炎樊志远何晨超
Owner TDG HLDG CO LTD
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