Time Delay Device Based on Tunneling-Induced Transparency Effect of Quantum Well Subband Transition
A technology for inducing transparent and deep quantum wells, applied in instruments, nonlinear optics, optics, etc., can solve problems such as short delay time and high interaction intensity, and achieve long delay time and controllable delay time
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Embodiment 1
[0022] refer to figure 1 , substrate 1 is GaAs (001). Followed by the AlAs layer, the thickness is 3900nm; the first barrier layer 3, the composition is Al 0.4 Ga 0.6 As, the thickness is 20nm; the shallow quantum well layer 4, the composition is Al 0.16 Ga 0.84 As, the thickness is 6.7nm; the second barrier layer 5, the composition is Al 0.4 Ga 0.6 As, the thickness is 4.2nm; the deep quantum well layer 6 is composed of GaAs, and the thickness is 7.8nm; the third barrier layer 7 is composed of Al 0.4 Ga 0.6 As, the thickness is 2.9nm; the continuum 8, the composition is Al 0.16 Ga 0.84 As, the thickness is 160nm. From the first barrier layer 3 to the continuous region 8 is a cycle, and then grow 9 cycles, a total of 10 cycles, and then grow a cover layer 9, the composition is Al 0.4 Ga 0.6 As, with a width of 200nm, and a GaAs air spacer layer 10, with a width of 7.5nm. The working wavelength of the time delay device with this structure is 9.23 μm, and the time d...
Embodiment 2
[0024] refer to figure 1 , substrate 1 is GaAs (001). In turn is the AlAs layer, the thickness is 5000nm; the first barrier layer 3, the composition is Al 0.35 Ga 0.75 As, the thickness is 10nm; the shallow quantum well layer 4, the composition is Al 0.1 Ga 0.9 As, the thickness is 8nm; the composition of the second barrier layer 5 is Al 0.35 Ga 0.75 As, the thickness is 3nm; the deep quantum well layer 6 is GaAs, the thickness is 10nm; the composition of the third barrier layer 7 is Al 0.35 Ga 0.75 As, the thickness is 2nm; the continuum 8, the composition is Al 0.1 Ga 0.9 As, the thickness is 160nm. From the first barrier layer 3 to the continuous region 8 is a cycle, and then grow 14 cycles, a total of 15 cycles, and then grow a cover layer 9, the composition is Al 0.4 Ga 0.6 As, with a width of 300nm, and a GaAs air spacer layer 10, with a width of 5nm. The time delay device with this structure has a working wavelength of 13.16 μm and a time delay of 0.55 ps. ...
Embodiment 3
[0026] refer to figure 1 , substrate 1 is GaAs (001). In turn is the AlAs layer, the thickness is 2000nm; the first barrier layer 3, the composition is Al 0.4 Ga 0.6 As, the thickness is 30nm; the shallow quantum well layer 4 is Al 0.2 Ga 0.8 As material, the thickness is 1.8nm; the composition of the second barrier layer 5 is Al 0.4 Ga 0.6 As, the thickness is 5nm; the deep quantum well layer 6 is GaAs, the thickness is 5.3nm; the composition of the third barrier layer 7 is Al 0.4 Ga 0.6 As, the thickness is 4.5nm; the composition of the continuum 8 is Al 0.2 Ga 0.8 As, the thickness is 160nm. From the first barrier layer 3 to the continuous region 8 is a cycle, and then grow 5 cycles, a total of 6 cycles, and then grow a cover layer 9, the composition is Al 0.4 Ga 0.6 As, with a width of 500nm, and a GaAs air spacer layer 10, with a width of 10nm. The working wavelength of the time delay device with this structure is 5.86 μm, and the time delay is 0.18 ps.
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