Ion injection sample platform

Abstract

The invention discloses an ion injection sample platform comprising a seal plate, a sample platform base, stepping motors, sampling plate supports, a gear connecting shaft, a sample plate, a beam current insertion hole, a restraint electrode, insulation posts, a voltage insertion hole and a computer control system. A sample platform body part is formed by sequentially connecting the sample platform base, the stepping motor, the sample plate supports, the stepping motor, the gear connecting shaft and the sample plate from bottom to top. The first stepping motor can push the sample plate supports to move left and right, the second stepping motor can push the gear connecting shaft to rotate and driven the sample plate to rotate, and the first stepping motor and the second stepping motor are connected with the computer control system. The sample plate is connected with the beam current insertion hole. The restraint electrode is fixedly connected with the sample platform base through the insulation posts and connected with the voltage insertion hole through a wire. The sample platform can be controlled through a computer in a long-distance mode, the ion injection sample platform has a horizontal moving function and a rotating function, in the process of ion injection, samples can be rapidly and precisely replaced, and the inclination angle of the samples can be controlled precisely.

Description

technical field [0001] The invention belongs to the technical field of ion implantation, in particular to an ion implantation sample stage. [0002] Background technique [0003] After the ion beam hits the solid material, a series of physical and chemical interactions will occur between the ion beam and the atoms or molecules in the material, the incident ions gradually lose energy, and finally stay in the material, causing the surface composition, structure and performance of the material to change. This phenomenon is called ion implantation. [0004] Ion implantation, developed in the 1960s, is a method of introducing dopants into semiconductors instead of high-temperature diffusion. With the development of ion implantation equipment, ion implantation technology develops fastest in integrated circuits. Due to the good controllability and repeatability of ion implantation technology, designers can design the ideal impurity distribution according to the requirements of c...

AI Technical Summary

Problems solved by technology

Before the present invention, China published a patent application "A device and method for preparing graphene" on July 24, 2013. The patent number is ZL201210157870.0. The application designed a sample holder, which can satisfy the translation and rotation of the sample plate function, but it is realized by pushing, pulling and rotating a metal rod exposed outside the vacuum chamber, the method is manual control, the operation is rough and inconvenient

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