Polar ingan nanowire material and fabrication method based on m-plane gan

Abstract

The invention discloses a polarity InGaN nanowire material based on GaN of the m face and a manufacturing method thereof. The polarity GaN nanowire material mainly solves the problems that growing efficiency of the InGaN nanowire is low, and direction consistency is poor in growth of a conventional polarity InGaN nanowire. The growing steps of the polarity InGaN nanowire material comprises the following steps: (1) a layer of 2-15nm metal Ti is evaporated on a GaN substrate of the m face; (2) the GaN substrate of the m face with the metal Ti is arranged in an MOCVD reaction chamber, and hydrogen and ammonia gas are fed into the reaction chamber, so that nitridation is conducted on part of the metal Ti on the GaN substrate of the m face to form TiN, and part of the metal Ti not subjected to nitridation remains; (3) an indium source, a gallium source and ammonia gas are fed in the MOCVD reaction chamber, a polarity InGaN nanowire parallel to the substrate grows on the TiN layer with the metal Ti not subjected to nitridation serving as a catalyst, wherein the polarity InGaN nanowire and the substrate are consistent in direction. The polarity InGaN nanowire material based on the GaN of the m face has the advantages that the growing rate is high, and direction consistency is good. The polarity InGaN nanowire material can be used for manufacturing polarity InGaN nano-devices with high performance.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a growth method of semiconductor materials, in particular to a metal-organic compound chemical vapor phase epitaxy growth method of polar InGaN nanowires on m-plane GaN, which can be used to manufacture InGaN nanostructure semiconductor devices. [0002] technical background [0003] Because the InGaN alloy has a forbidden band width of 0.7-3.4eV according to its composition at room temperature, it almost completely covers the entire solar spectrum and has the characteristics of high luminous efficiency. It is usually used as the active layer of optoelectronic devices such as LEDs and LDs. It is not only one of the ideal materials for making high-efficiency photoelectric devices, but also an ideal material for making high-performance solar cells, so it has received extensive attention. With the continuous development of molecular beam epitaxy (MBE) and metal organic chemica...

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Problems solved by technology

The InGaN nanowires prepared by this method are perpendicular to the bottom and have good direction consistency. However, due to the short length of the nanowires, uneven thickness, and non-polar materials, the polarization characteristics cannot be used, so it is not suitable for light-emitting devices and pressure sensors.

[0005] In 2007, X.M.Cai et al prepared InGaN nanowires using metal catalysts by chemical vapor deposition CVD method, see Cai X M, Ye F, Jing S Y, et al.CVD growth of InGaN nanowires[J].Journal of Alloys and Compounds, 2009, 467(1):472-476. Although the preparation cost of this method is low, the device application of InGaN nanowires is limited due to its long growth time, low growth rate and poor direction uniformity

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