Method for growing optical crystal

A growth method and optical technology, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of crystal area change, unsatisfactory use effect, and imperfect growth method of artificial optical crystal, etc., to achieve perfect process and use ideal effect

Inactive Publication Date: 2014-07-23
SANMING GANGLE CRYSTAL ELECTRONICS
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The crystal growth method using the above technology can certainly be used, but there are the following disadvantages: Compared with piezoelectric crystal crystals, optical crystal crystals have higher requirements for inclusions and better growth uniformity. Due to single-sided growth, the crystal area is relatively large. There are big changes,
[0006] This process only provides the main process parameters of filling method, temperature and pressure, but the growth process of artificial optical crystal is a complicated process. In addition to the main parameters of filling method, temperature and pressure, Many details such as time, heating curve, how to set the convection holes, etc. will have a great influence on the quality of the crystal produced. Therefore, the growth method of artificial optical crystal in the prior art is relatively not perfect, and the effect is not ideal enough.

Method used

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Experimental program
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Embodiment Construction

[0027] Embodiments of the present invention are as follows:

[0028] A method for growing an optical crystal, the steps of which are as follows:

[0029] A. Select granular natural quartz stone as the culture body, soak the quartz stone in washing powder for 20-24 hours, take it out and rinse it with water, remove the quartz stone and epidermal ore containing associated impurities, and then rinse it with deionized water Once, put the cleaned quartz stone into the lower part of the autoclave; the filling height of the quartz stone in the autoclave is lower than the height of the lower heating element; add high-purity water into the autoclave; The weight ratio of quartz stone should be controlled at 1:1.25-1.30; the filling degree should be 83%;

[0030] B. Soak the holed seed wafer in dilute hydrofluoric acid for 4-6 hours, clean the surface contamination iron produced during the cutting and drilling process of the seed wafer, and then place it in an ultrasonic cleaning machin...

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Abstract

The invention discloses a method for growing optical crystal. The method comprises the following steps: washing and preparing raw materials, washing and preparing a high pressure kettle and auxiliary pieces inside the high pressure kettle, heating for 28-30 hours according to an optimally designed time-temperature relationship curve, further keeping and controlling the temperature for 115 days according to another optimally designed time-temperature relationship curve, subsequently naturally cooling down to be less than 100 DEG C, and opening the high pressure kettle. As the time-temperature relationship curves in different periods and other details are optimized, a growth process of the optical crystal is relatively more complete, and the use effect is more ideal.

Description

technical field [0001] The invention belongs to the technical field of artificial crystal manufacture, and relates to a method for growing optical crystals. Background technique [0002] At present, artificial crystal growth generally adopts the hydrothermal temperature difference method, which is carried out in a vertical sealed autoclave. Quartz debris is placed in the lower part of the autoclave at about 2 / 5-1 / 2 as nutrients (this part is called the dissolution zone). The seed crystal frame is placed at the upper 3 / 5-1 / 2 place, and the seed crystal of a certain cut type used for growing crystal is suspended on the frame, and this area is called the growth area. There is a baffle with a certain opening ratio in the growth zone and the dissolution zone, and this baffle can form a certain temperature difference between the two zones (of course, it is also affected by the external heating power), so that the solution is convected up and down. Fill the autoclave with an alka...

Claims

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Application Information

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IPC IPC(8): C30B7/10C30B29/18
Inventor 余仙水全鸣
Owner SANMING GANGLE CRYSTAL ELECTRONICS
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