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Chemical preparation method of Bi4LaTi3FeO15 multiferroic film

A multiferroic thin film and chemical technology, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of ferroelectric performance deterioration, leakage current increase, and inability to obtain ferroelectric loops, etc., to achieve ferroelectricity Improved performance, excellent ferroelectric properties, and low cost

Inactive Publication Date: 2014-07-30
QINGDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

While inserting LaFeO 3 Afterwards, the magnetism will be enhanced, but there are no reports on its ferroelectric properties. This is mainly because the insertion of magnetic groups will increase the leakage current, which will make the ferroelectric properties worse, so that normal ferroelectric loops cannot be obtained.
This makes it difficult for the iron materials in this system to be practically used in related fields such as microsensors and multi-state memories. Therefore, how to obtain Bi with good iron properties 4 LaTi 3 FeO 15 Multiferroic thin films are an urgent problem to be solved at present

Method used

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  • Chemical preparation method of Bi4LaTi3FeO15 multiferroic film
  • Chemical preparation method of Bi4LaTi3FeO15 multiferroic film
  • Chemical preparation method of Bi4LaTi3FeO15 multiferroic film

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Experimental program
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Effect test

Embodiment 1

[0025] 1. Preparation of precursor sol: with analytically pure bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), lanthanum oxide (La 2 o 3 ), iron acetylacetonate (C 15 h 21 FeO 6 ) and butyl titanate (Ti(C 4 h 9 O) 4 ) etc. as the main raw materials; according to Bi 4 LaTi 3 FeO 15 Weigh various raw materials that meet the stoichiometric ratio and configure them; in order to compensate for the volatilization of Bi elements in the subsequent heat treatment process, Bi(NO 3 ) 3 ·5H 2 O excess 4mo1%, specific steps are:

[0026] (1) Mole ratio La: HNO 3 =1:20 measure concentrated HNO 3 , and then La 2 o 3 Add to concentrated HNO 3 , placed on a magnetic stirrer and stirred until the solution was clear;

[0027] (2) Molar ratio Bi:CH 3 COOH=1:20 measure CH 3 COOH, then Bi(NO 3 ) 3 ·5H 2 O joins CH 3 COOH, placed on a constant temperature magnetic stirrer at 55°C and heated and stirred for 1.5h to remove Bi(NO 3 ) 3 ·5H 2 water of crystallization in O, to which C...

Embodiment 2

[0035] The rest is the same as in Example 1, step 1 (3) adding ethylene glycol methyl ether to make the solution volume 0.1mol / L.

[0036] The Bi prepared in this example 4 LaTi 3 FeO 15 The film phase is pure, and the grains are c-axis oriented (by the attached figure 2 shown); the remnant polarization of the film is 1.4 μC cm -2 , the squareness of the ferroelectric loop is 0.59 (by the attached Figure 5 shown); at 80V, the leakage current is 1.2×10 -4 A / cm 2 (by attached Figure 7 shown).

Embodiment 3

[0038] The rest is the same as in Example 1, step 3 is rapidly raised to 700°C at a rate of 60°C / s.

[0039] The Bi prepared in this example 4 LaTi 3 FeO 15 The film has a small amount of impurity, and the grains are randomly oriented (by the attached figure 1 shown); the remnant polarization of the film is 11.4μC cm -2 , the squareness of the ferroelectric loop is 0.73 (by the attached Image 6 shown); the leakage current at 80V is 1.5×10 -4 A / cm 2 (by attached Figure 7 shown).

[0040] Bi 4 LaTi 3 FeO 15 Due to the insertion of magnetic groups, the leakage current of multiferroic thin films increases, resulting in the deterioration of their ferroelectric properties, which cannot meet the application requirements. In addition, the chemical composition of the thin film is relatively complex, and the preparation process is prone to generate heterogeneous phases. Therefore, a phase-pure Bi with excellent ferroelectric properties was prepared. 4 LaTi 3 FeO 15 Mult...

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Abstract

The invention belongs to the technical field of physico-chemical material preparation, and relates to a chemical preparation method of a Bi4LaTi3FeO15 multiferroic film. The method is characterized in that single-layer magnetic octahedral group LaFeO3 is inserted into three-layer of layered perovskite-type ferroelectric Bi4Ti3O12 to form a novel four-layer layered perovskite-type Bi4LaTi3FeO15 multiferroic film. According to the method of the invention, a Bi4LaTi3FeO15 precursor sol is firstly prepared by a chemical preparation method, and then is deposited on a clean substrate of (111)Pt / Ti / SiO2 / Si(100) directly to form a wet film; and annealing treatment in O2 atmosphere is carried out in a rapid heat treatment furnace. The method is simple in required equipment, low in cost, compatible with microelectronic technology and process, and suitable for industrial production. The prepared Bi4LaTi3FeO15 multiferroic film is pure in phase, good in ferroelectric properties, and quite beneficial to application and popularization of Bi4LaTi3FeO15 multiferroic films.

Description

technical field [0001] The invention belongs to the technical field of physical and chemical material preparation, and relates to a Bi 4 LaTi 3 FeO 15 Chemical preparation methods of multiferroic thin films. Background technique [0002] Multiferroic materials can exhibit ferroelectricity and magnetism at the same time, and there is a magnetoelectric coupling between them, so that the mutual regulation of ferroelectricity and magnetism can be realized (N.A.Spaldin and M.Fiebig, Science309, 391(2005); W. Eerenstein, N.D. Mathur, and J.F. Scott, Nature 442, 759 (2006); M. Bibes, and A. Barthélémy, Nature Mater. 7, 425 (2008)). Therefore, multiferroic materials, as a new multifunctional material, have broad application prospects in spintronics and other fields. Among them, the multiferroic thin film material is compatible with microelectronic technology, so that the multiferroic thin film can be widely used in the fields of microsensors and multi-state storage. For example...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/26C04B35/624C01G49/00
Inventor 宿杰卢朝靖王晓杰李华兵
Owner QINGDAO UNIV
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