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A kind of bi with preferred orientation of (012) crystal plane 1-x yb x fe 0.98 mn 0.02 o 3 Ferroelectric thin film and preparation method thereof

A technology of preferential orientation and ferroelectric thin film, applied in the direction of coating, etc., can solve the problem of reducing BFO thin film, achieve good uniformity, good dielectric stability and ferroelectric performance, and reduce the leakage current density

Active Publication Date: 2020-05-05
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, simultaneous doping on the Bi site and Fe site has not been used to prepare Bi. 1-x Yb x Fe 0.98 mn 0.02 o 3 Related reports on ferroelectric thin films to reduce leakage current density of BFO thin films and improve ferroelectric properties of BFO thin films

Method used

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  • A kind of bi with preferred orientation of (012) crystal plane <sub>1-x</sub> yb <sub>x</sub> fe <sub>0.98</sub> mn <sub>0.02</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof
  • A kind of bi with preferred orientation of (012) crystal plane <sub>1-x</sub> yb <sub>x</sub> fe <sub>0.98</sub> mn <sub>0.02</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof
  • A kind of bi with preferred orientation of (012) crystal plane <sub>1-x</sub> yb <sub>x</sub> fe <sub>0.98</sub> mn <sub>0.02</sub> o <sub>3</sub> Ferroelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1) Clean the surface of the FTO / glass substrate with detergent, acetone, and absolute ethanol in sequence, and seal it in absolute ethanol for later use;

[0032] 2) Bi(NO 3 ) 3 ·5H 2 O (5% excess), Yb (NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, C 6 h 9 MnO 6 2H 2 O as a raw material, according to the molar ratio of 0.97:0.08:0.98:0.02 (x=0.08) was added to ethylene glycol methyl ether, stirred for 30 minutes until completely dissolved, then added acetic anhydride and stirred for 90 minutes to obtain a total concentration of metal ions of 0.3mol / L of homogeneously mixed precursor liquid, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0033] 3) Take out the FTO / glass substrate sealed in absolute ethanol in step 1, wash it with deionized water and dry it, and then irradiate it with an ultraviolet light irradiation instrument for 35 minutes to promote the good spreading of the precursor solution on the FTO / glass substrate; ...

Embodiment 2

[0037] 1) Clean the surface of the FTO / glass substrate with detergent, acetone, and absolute ethanol in sequence, and seal it in absolute ethanol for later use;

[0038] 2) Bi(NO 3 ) 3 ·5H 2 O (5% excess), Yb (NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, C 6 h 9 MnO 6 2H 2 O as a raw material, according to the molar ratio of 0.96:0.09:0.98:0.02 (x=0.09) was added to ethylene glycol methyl ether, stirred for 30 minutes until completely dissolved, then added acetic anhydride and stirred for 90 minutes to obtain a total concentration of metal ions of 0.3mol / L of homogeneously mixed precursor liquid, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0039] 3) Take out the FTO / glass substrate sealed in absolute ethanol in step 1, wash it with deionized water and dry it, and then irradiate it with an ultraviolet light irradiation instrument for 35 minutes to promote the good spreading of the precursor solution on the FTO / glass substrate; ...

Embodiment 3

[0043] 1) Clean the surface of the FTO / glass substrate with detergent, acetone, and absolute ethanol in sequence, and seal it in absolute ethanol for later use;

[0044] 2) Bi(NO 3 ) 3 ·5H 2 O (5% excess), Yb (NO 3 ) 3 ·6H 2 O, Fe(NO 3 ) 3 9H 2 O, C 6 h 9 MnO 6 2H 2 O as a raw material, according to the molar ratio of 0.95:0.10:0.98:0.02 (x=0.10) was added to ethylene glycol methyl ether, stirred for 30 minutes until completely dissolved, then added acetic anhydride and stirred for 90 minutes to obtain a total concentration of metal ions of 0.3mol / L of homogeneously mixed precursor liquid, wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0045] 3) Take out the FTO / glass substrate sealed in absolute ethanol in step 1, wash it with deionized water and dry it, and then irradiate it with an ultraviolet light irradiation instrument for 35 minutes to promote the good spreading of the precursor solution on the FTO / glass substrate; ...

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Abstract

The invention provides a (012) crystal face preferred orientation Bi1-xYbxFe0.98Mn0.02O3 ferroelectric film and a preparing method thereof. A precursor solution is prepared with nitrate, manganese acetate and the like as raw materials and ethylene glycol monomethyl ether and acetic anhydride as solvents, and the Bi1-xYbxFe0.98Mn0.02O3 film is prepared on an FTO substrate through the spin coating and layer-by-layer annealing technology. The prepared film is in preferred orientation growth along the (012) crystal face, the leakage current density of the film is reduced by 2-3 order of magnitudes compared with the leakage current density of a pure BFO film, the leakage current density of the BFO film is obviously reduced, and the ferroelectric property of the BFO film is improved. The film is prepared through the sol-gel method, the equipment requirement is simple, the film is suitable for being prepared on large surfaces and surfaces in irregular shape, the prepared film is good in uniformity, and chemical components are accurate and controllable. The ferroelectric and ferromagnetism properties of the film are effectively improved through ion doping.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of (012) crystal plane preferred orientation Bi on the surface of a functionalized FTO / glass substrate 1-x Yb x Fe 0.98 mn 0.02 o 3 method for ferroelectric thin films. Background technique [0002] As a lead-free and environmentally friendly ferroelectric material, BiFeO 3 (BFO) theoretical remanent polarization value reaches 100μC / cm 2 , is the ordinary Pt(ZrTi)O 3 (PZT) is about 3 times that of ferroelectric materials, and BFO has excellent piezoelectric and ferromagnetic properties at the same time. Due to the existence of these advantages, BFO is expected to replace lead-containing PZT ferroelectric materials, and has been widely developed and applied in information storage, sensors, micro-electromechanical systems, etc., and is one of the hot spots in the current multiferroic materials research. However, while BFO has excellent ferroelectric, piezoe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/21C03C2217/211C03C2217/24C03C2217/94C03C2218/116C03C2218/32
Inventor 谈国强乐忠威任慧君夏傲杨玮郑玉娟
Owner SHAANXI UNIV OF SCI & TECH
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