Deposition of silicon oxide by atmospheric pressure chemical vapor deposition

A silicon oxide and silicon oxide-containing technology, used in organic chemistry, gaseous chemical plating, chemical instruments and methods, etc., can solve the problems of contamination of coating equipment and low deposition efficiency.

Active Publication Date: 2014-07-30
ARKEMA FRANCE SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the deposition efficiency is often very low, which can lead to fouling of the coating equipment, causing non-uniformity in the deposited film together with frequent cleaning of the equipment

Method used

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  • Deposition of silicon oxide by atmospheric pressure chemical vapor deposition
  • Deposition of silicon oxide by atmospheric pressure chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0063] Example 1: Deposition of SiO from n-octylsilane precursor + air 2

[0064] The n-octylsilane was evaporated with 4.5 standard liters (slm) of nitrogen carrier heated to 180° C. per minute. The vaporized n-octylsilane stream was then combined with 6.5 slm of dry air heated to 180°C and delivered as a single stream onto the soda lime silica glass substrate surface. The soda lime silica glass substrate was pre-coated with 170 nm of tin oxide and heated to 625°C-650°C. Optical characterization after deposition showed about 390 nm of silicon dioxide formed at a deposition rate of 6.5 nm / s.

[0065] NOTE: The SiO 2 Deposited on a tin oxide (high refractive index) coated glass to contribute to the optical characteristics of the resultant layer. In practice, the SiO 2 Can be deposited directly on a glass substrate.

example 3

[0068] Example 3: Deposition of SiO from n-hexylsilane precursor + air 2

[0069] The same experiment as provided in Example 1 was repeated using n-hexylsilane as the alkylsilane precursor instead of n-octylsilane. Optical characterization after deposition showed the formation of about 350 nm of silicon dioxide at a deposition rate of 6 nm / s.

example 4

[0070] Example 4: Deposition of SiO from n-octylsilane precursor + air and water 2

[0071] The same experiment was repeated as provided in Example 1 using n-octylsilane as the evaporated precursor, but water was also added to the precursor mixture. Specifically, the conditions of Example 1 were repeated by adding about a 1:1 molar ratio of water to silicon precursor. Optical characterization after deposition showed that about 370 nm of silicon dioxide was deposited at a rate of 6 nm / s.

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Abstract

The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The method is particularly useful for applying an anti-iridescent coating to glass in an online float glass process.

Description

field of invention [0001] The present invention relates to chemical vapor deposition methods for depositing silicon oxide films on substrates. Background of the invention [0002] Chemical vapor deposition (CVD) is a chemical process used to produce solid materials of high purity and high performance, and is commonly used in the semiconductor industry to produce thin films. In a typical CVD process, a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposit or film. This deposit or film may contain one or more types of metal atoms which, after reaction and / or decomposition of these precursors, may be in the form of metals, metal oxides, metal nitrides, etc. [0003] For example, a CVD method can be used to apply various coatings or films to transparent substrates, such as, for example, soda-lime glass, in order to reflect long-wavelength infrared radiation. Depending on the refractive index ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40
CPCC03C17/245C23C16/401C23C16/453C03C2217/213C03C2217/23C03C2218/1525C07F7/0805C07F7/12C07F7/0838C07F7/1804Y10T428/265C23C16/0209C23C16/402C23C16/403C23C16/405C23C16/407G02B1/10
Inventor R·C·史密斯J·L·斯特里克
Owner ARKEMA FRANCE SA
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